Granted Patent B2

US 12,230,351 · App. 17/912,766 · Granted Feb 18, 2025

Inventors: Soeren Steudel (Herent, BE); Sean Lord (Ottawa, CA)

Assignee: MICLEDI MICRODISPLAYS BV

G11C5/147G11C11/419

Abstract

Claims (42)

1. A circuitry for on-chip power regulation comprising:

a memory array comprising a plurality of memory cell blocks arranged in rows and columns, where the memory cell blocks are clustered into a defined number of memory cell blocks along the row, each cluster is connected to a respective local reference line;

a plurality of sense amplifiers connected to the respective memory cell blocks;

at least one dummy memory cell block additionally arranged to each cluster of memory cell blocks, connected to a main reference line; and

at least one transistor arranged in between the local reference line of each cluster of memory cell blocks and the main reference line,

wherein the transistor is configured to receive an input signal from the dummy memory cell block, thereby performing power gating of the respective cluster of memory cell blocks based on the input signal from the dummy memory cell block.

2. The circuitry according to claim 1 ,

wherein the dummy memory cell block of a particular cluster is configured to store one bit information representing the one bit information to be read from and/or

write to each memory cell block of the cluster, and

wherein the transistor associated to the dummy memory cell block is further configured to switch between a low resistive state and a high resistive state based on the level of the one bit information.

3. The circuitry according to any of claim 1 ,

wherein the plurality of sense amplifiers are further arranged in groups corresponding to the cluster of memory cell blocks.

4. The circuitry according to any of claim 1 ,

wherein each group of sense amplifiers are further connected to the respective dummy memory cell block through common signal lines, preferably through a common

dummy bit-line and a common dummy bit-line bar.

5. The circuitry according to any of claim 1 ,

wherein each sense amplifier is configured to receive inputs from a bit-line and a bit-line bar of a respective memory cell block and is further configured to receive inputs from the dummy bit-line and the dummy bit-line bar of a respective dummy memory cell block.

6. The circuitry according to claim 5 ,

wherein each sense amplifier is further configured to output a value based on the inputs from the dummy bit-line and the dummy bit-line bar independently of the

inputs from the bit-line and the bit-line bar of a respective memory cell block.

7. The circuitry according to claim 5 ,

wherein each sense amplifier is further configured to compare the input corresponding to the bit-line bar to a reference potential, whereby the reference potential is

sufficiently low.

8. The circuitry according to any of claim 1 ,

wherein the content to be stored in the memory array is predictable and is updated continuously with a low duty cycle.

9. The circuitry according to any of claim 1 ,

wherein the content to be stored in the memory array is significantly smaller compared to the size of the memory array, preferably limited to less than 5 percent, more preferably less than 2 percent of the overall size of the memory array at any given time.

10. The circuitry according to any of claim 1 ,

wherein the content to be stored in the memory array is segmented corresponding to the size of the cluster of memory cell blocks.

11. The circuitry according to claim 10 ,

wherein the dummy memory cell blocks are arranged in an array, whereby each array element comprises one bit information corresponding to the segmented content of

respective cluster of memory cell blocks.

12. The circuitry according to any of claim 1 ,

wherein the plurality of memory cell blocks and the dummy memory cell blocks are implemented with a static random access memory cell, preferably a six-transistor

static random access memory cell.

13. A method for on-chip power regulation comprising the steps of:

clustering a memory array comprising a plurality of memory cell blocks arranged in rows and columns into a defined number of memory cell blocks along the row,

where each cluster is connected to a respective local reference line;

connecting a plurality of sense amplifiers to the respective memory cell blocks;

arranging at least one dummy memory cell block to each cluster of memory cell blocks, connected to a main reference line;

arranging at least one transistor in between the local reference line of each cluster of memory cell blocks and the main reference line; and

performing, by the transistor, power gating of the respective cluster of memory cell blocks based on an input signal from the dummy memory cell block.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (14)