Dielectric material, device including the same, and method of preparing the dielectric material
Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbO 3 ternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbO 3 ternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about −15% to about 15% in a range of about −55° C. to about +200° C.
1. A dielectric material, comprising:
a NaNbO 3 ternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbO 3 ternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about −15% to about 15% in a range of about −55° C. to about +200° C.
2. The dielectric material of claim 1 , wherein a specific resistivity of the NaNbO 3 ternary material is greater than 1×10 12 Ωcm.
3. The dielectric material of claim 1 , wherein a dielectric loss factor (tan δ) of the NaNbO 3 ternary material is 2.0 or less.
4. The dielectric material of claim 1 , wherein the NaNbO 3 ternary material comprises a compound represented by Formula 1:
(1− x−y )NaNbO 3 −x Sm 1/3 NbO 3 −y (M1) a (M2) b O 3 [Formula 1]
wherein,
M1 is a Group 1 element, a Group 2 element, Group 15 element, or a combination thereof,
M2 is a Group 4 transition metal element, a Group 5 transition metal element, or a combination thereof, and
0.1≤x≤0.15, 0.001≤y≤0.1, 0<a<1, 0<b<1, and a+b=1.
5. The dielectric material of claim 4 , wherein NaNbO 3 and Sm 1/3 NbO 3 in the compound form a solid solution.
6. The dielectric material of claim 1 , wherein the NaNbO 3 ternary material comprises a compound represented by Formula 2:
(1− x−y )NaNbO 3 −x Sm 1/3 NbO 3 −y (M1) c (M1′) d TiO 3 [Formula 2]
wherein,
M1 and M1′ are each independently a Group 1 element, a Group 2 element, a Group 15 element, or a combination thereof, and
0.1≤x≤0.15, 0.001≤y≤0.03, 0<c<1, 0<d<1, and c+d=1.
7. The dielectric material of claim 6 , wherein M1 and M1′ in Formula 2 are each independently Ba, Sir, Ca, Na, Bi, or a combination thereof.
8. The dielectric material of claim 6 , wherein 0.001≤y≤0.02.
9. The dielectric material of claim 1 , wherein the NaNbO 3 ternary material comprises a compound represented by Formula 3:
(1− x−y )NaNbO 3 −x Sm 1/3 NbO 3 −y (M1)TaO 3 [Formula 3]
wherein,
M1 is a Group 1 element, and
0.1≤x≤0.15, and 0.001≤y≤0.1.
10. The dielectric material of claim 9 , wherein, M1 is Na.
11. The dielectric material of claim 9 , wherein, 0.001≤y≤0.1.
12. The dielectric material of claim 1 , wherein the NaNbO 3 ternary material comprises at least one of (1−x−y)NaNbO 3 −xSm 1/3 NbO 3 −yBaTiO 3 , (1−x−y)NaNbO 3 −xSm 1/3 NbO 3 −ySrTiO 3 , (1−x−y)NaNbO 3 −xSm 1/3 NbO 3 −yCaTiO 3 , (1−x−y)NaNbO 3 −xSm 1/3 NbO 3 −yBicNadTiO 3 , or (1−x−y)NaNbO 3 −xSm 1/3 NbO 3 −y′NaTaO 3 ,
wherein x is from 0.1 to 0.15, y is from 0.001 to 0.03, y′ is from 0.001 to 0.1, c and d are each independently greater than 0 and less than 1, and the sum of c and d is 1.
13. The dielectric material of claim 1 , wherein the NaNbO 3 ternary material comprises at least one of (0.85−y)NaNbO 3 −0.15Sm 1/3 NbO 3 −yBaTiO 3 , (0.85−y)NaNbO 3 −0.15Sm 1/3 NbO 3 −ySrTiO 3 , (0.85−y)NaNbO 3 −0.15Sm 1/3 NbO 3 −yCaTiO 3 , (0.85−y)NaNbO 3 −0.15Sm 1/3 NbO 3 −yBicNadTiO 3 , and (0.85−y)NaNbO 3 −0.15Sm 1/3 NbO 3 −y′NaTaO 3 ,
wherein y is from 0.001 to 0.03, y′ is from 0.001 to 0.1, c and d are each independently greater than 0 and less than 1, and the sum of c and d is 1.
14. A device comprising:
a first electrode;
a second electrode facing the first electrode; and
a dielectric layer between the first electrode and the second electrode;
wherein the dielectric layer includes the dielectric material according to claim 1 .
15. The dielectric material of claim 14 , wherein the dielectric layer is a single layer.
16. The dielectric material of claim 14 , wherein the dielectric layer is a multilayer of at least two layers.
17. The dielectric material of claim 14 , further comprising a protective layer on at least a portion of at least one of an upper portion or a lower portion of the dielectric layer.
18. The device of claim 17 , wherein the protective layer is a single layer.
19. The device of claim 17 , wherein the protective layer is a multilayer of at least two layers.
20. The device of claim 17 , wherein the protective layer comprises BaTiO 3 , SrTiO 3 , BaZrO 3 , BaTiO 3 , PbTiO 3 , PbZrO 3 , SrZrO 3 , CaTiO 3 , CaZrO 3 , BaSnO 3 , BaFeO 3 , or a combination thereof.
21. The device of claim 14 , wherein the device is a capacitor.
22. A device of comprising:
a plurality of internal electrodes including a plurality of first electrodes and a plurality of second electrodes alternately arranged; and
dielectric layers between the plurality of first electrodes and the plurality of second electrodes, respectively,
wherein at least one of the dielectric layers includes the dielectric material according to claim 1 .
23. A method of preparing a dielectric material, the method comprising:
mechanically milling a mixture of a Nb compound, a Na salt, a Sm compound, an M1-containing salt, and an M2-containing salt; and
performing a first heat treatment in an oxidizing atmosphere such that the mixture oxidizes to form the dielectric material including a compound represented by Formula 1:
(1− x−y )NaNbO 3 −x Sm 1/3 NbO 3 −y (M1) a (M2) b O 3 [Formula 1]
wherein,
M1 is a Group 1 element, a Group 2 element, a Group 15 element, or a combination thereof,
M2 is a Group 4 transition metal element, a Group 5 transition metal element, or a combination thereof, and
0.1≤x≤0.15, 0.001≤y≤0.1, 0<a<1, 0<b<1, and a+b=1.
24. The method of claim 23 , wherein the first heat treatment is performed at about 800° C. to about 1000° C.
25. The method of claim 23 , further comprising:
obtaining a molded body using a product of the first heat treatment; and
performing a second heat treatment on the molded body.
26. The method of claim 25 , wherein the second heat treatment is performed at about 1000° C. to about 1600° C.