Granted Patent B2

US 12,232,370 · App. 18/473,538 · Granted Feb 18, 2025

Inventors: Jun Yu (Beijing, CN); Zhong Lu (Beijing, CN); Zhenrui Fan (Beijing, CN); Shuohua Chen (Beijing, CN); Zhaoyang Song (Beijing, CN); Chenlin Yin (Beijing, CN); Yongjie Tang (Beijing, CN)

Assignees: Chengdu BOE Optoelectronics Technology Co., Ltd.; BOE TECHNOLOGY GROUP CO., LTD.

H10K59/124H10K71/00H10K77/111H10K59/1201H10K2102/311H10K2102/351

Abstract

Claims (35)

1. An Organic Light-Emitting Diode display substrate, comprising:

a first flexible organic layer;

a first inorganic layer on the first flexible organic layer;

a second flexible organic layer on the first inorganic layer;

a pixel driving circuit layer on the second flexible organic layer;

a light-emitting element layer on the pixel driving circuit layer;

wherein a thickness of the first flexible organic layer is 5 μm-20 μm, a thickness of the first inorganic layer is 0.4 μm-2 μm, and a thickness of the second flexible organic layer is 5 μm-20 μm;

wherein the first inorganic layer comprises a first inorganic sub-layer and a second inorganic sub-layer;

a material of the first inorganic sub-layer comprises one or more of silicon oxide, silicon nitride or silicon oxynitride,

wherein a thickness of the second inorganic sub-layer is 1 nm-50 nm.

2. The Organic Light-Emitting Diode display substrate according to claim 1 , wherein the second inorganic sub-layer is on a side of the first inorganic sub-layer away from the first flexible organic layer.

3. The Organic Light-Emitting Diode display substrate according to claim 1 , wherein a material of the second inorganic sub-layer comprises amorphous silicon.

4. The Organic Light-Emitting Diode display substrate according to claim 1 , wherein a material of the first inorganic sub-layer comprises silicon oxide.

5. The Organic Light-Emitting Diode display substrate according to claim 1 , wherein a thickness of the first flexible organic layer is 8 μm-10 μm.

6. The Organic Light-Emitting Diode display substrate according to claim 1 , wherein a thickness of the second flexible organic layer is 5 μm-8 μm.

7. The Organic Light-Emitting Diode display substrate according to claim 1 , wherein materials of the first flexible organic layer and the second flexible organic layer both include polyimide.

8. The Organic Light-Emitting Diode display substrate according to claim 1 , wherein a thickness of the second inorganic sub-layer is 1 nm-30 nm.

9. The Organic Light-Emitting Diode display substrate according to claim 1 , wherein a thickness of the second inorganic sub-layer is 1 nm-10 nm.

10. The Organic Light-Emitting Diode display substrate according to claim 1 , wherein a thickness of the second inorganic sub-layer is 1.5 nm-3 nm.

11. The Organic Light-Emitting Diode display substrate according to claim 1 , wherein a thickness of the second inorganic sub-layer is 3 nm-5 nm.

12. The Organic Light-Emitting Diode display substrate according to claim 1 , wherein a thickness of the first inorganic layer is 0.4 μm-0.5 μm.

13. The Organic Light-Emitting Diode display substrate according to claim 1 , wherein a thickness of the first inorganic layer is 0.5 μm-1 μm.

14. The Organic Light-Emitting Diode display substrate according to claim 1 , wherein a thickness of the first flexible organic layer is 10 μm.

15. A preparation method of an Organic Light-Emitting Diode display substrate, comprising:

manufacturing a display substrate motherboard, comprising:

providing a base substrate;

forming a first flexible organic layer on the base substrate;

forming a first inorganic layer on the first flexible organic layer;

forming a second flexible organic layer on the first inorganic layer;

forming a pixel driving circuit layer on the second flexible organic layer, the pixel driving circuit layer including a plurality of pixel driving circuit portions respectively used for a plurality of display substrates, and the plurality of pixel driving circuit portions being insulated from each other;

separating the first flexible organic layer from the base substrate;

cutting the display substrate motherboard to form a plurality of individual display substrates;

wherein a thickness of the first flexible organic layer is 5 μm-20 μm, a thickness of the first inorganic layer is 0.4 μm-1 μm, and a thickness of the second flexible organic layer is 5 μm-20 μm,

wherein a thickness of the second inorganic sub-layer is 1 nm-50 nm.

16. The Organic Light-Emitting Diode display substrate according to claim 1 , wherein a thickness of the first inorganic layer is 0.4 μm-0.5 μm.

Assignments (1)

Continuity (2)

References Cited (18)