IP Library › Granted Patent US 12,232,422
Granted Patent B2
US 12,232,422 · App. 17/272,063 · Granted Feb 18, 2025

Piezoelectric multilayer component and method for producing a piezoelectric multilayer component

Inventors: Denis Orosel (Deutschlandsberg, AT); Yongli Wang (Frauental, AT)
Assignee: TDK Electronics AG
H10N30/50H10N30/097H10N30/40H10N30/8542
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Quick Facts
Patent No.
US 12,232,422
App. No.
17/272,063
Granted
Feb 18, 2025
Kind
B2
Abstract

In an embodiment a piezoelectric multilayer component includes a ceramic main body comprising a ceramic material, wherein a main component of the ceramic material has the general empirical formula (K x Na 1-x )NbO 3 , where 0≤x≤1, wherein the ceramic material comprises at least two additives selected from a number of compounds respectively comprising at least one metal, wherein a metal of a first additive comprises at least K, Nb, Cu, Mn or Ta, and wherein a metal of a second additive comprises K, Nb or Ta.

Claims (29)

1. A piezoelectric multilayer component comprising:

a ceramic main body consisting of a ceramic material consisting of a main component and two or more additives,

wherein the main component has the general empirical formula

(K x Na1− x )NbO3, where 0≤ x≤ 1,

wherein the two or more additives are selected from a number of compounds respectively comprising one metal selected from K, Nb, Cu, Mn or Ta.

2. The piezoelectric multilayer component according to claim 1 , wherein the ceramic main body has a large number of internal electrodes.

3. The piezoelectric multilayer component according to claim 2 , wherein the internal electrodes comprise at least Ag, Pd, Pt, Cu or Ni, or an alloy comprising at least two of the metals mentioned.

4. An atmospheric pressure plasma generator comprising:

the piezoelectric multilayer component according to claim 1 ,

wherein the pressure plasma generator is configured to generate a cold plasma.

5. A method for producing the piezoelectric multilayer component according to claim 1 , the method comprising:

performing a first calcination step; and

performing a second calcination step.

6. The method according to claim 5 , wherein the second calcination step is performed at a maximal temperature which differs from a maximal temperature at which the first calcination step is performed.

7. The method according to claim 6 , wherein the first calcination step is performed at the maximal temperature selected from a range of 700° C. to 800° C., and wherein the second calcination step is performed at the maximal temperature selected from a range of 800° C. to 900° C.

8. The method according to claim 5 , wherein a retention time of the second calcination step is equal to a retention time of the first calcination step.

9. The method according to claim 8 , wherein the first and second calcination steps respectively are performed with a retention time selected from a range of two hours to six hours.

10. The method according to claim 5 , further comprising performing a sinter step for which a maximal temperature selected is between 1000° C. and 1080° C. and a retention time selected is between 30 minutes and 120 minutes.

11. The method according to claim 10 , wherein the sinter step is performed in an inert atmosphere.

12. The method according to claim 10 , further comprising performing a tempering step after performing the sinter step.

13. The method according to claim 12 , wherein the tempering step is performed at a maximal temperature selected between 800° C. and 900° C. and a retention time selected between one and two hours.

14. The method according to claim 12 , wherein air or an atmosphere with an oxygen partial pressure of 2×10-1 to 2×10-6 is selected as atmosphere during performance of the tempering step.

15. A method for producing the piezoelectric multilayer component according to claim 1 , the method comprising:

processing starting materials for producing the ceramic material in water.

16. The method according to claim 15 , further comprising performing sintering with a maximal temperature selected between 1000° C. and 1080° C. and with a retention time selected between 30 minutes and 120 minutes.

17. The method according to claim 16 , wherein sintering is performed in an inert atmosphere.

18. The method according to claim 16 , further comprising performing tempering after performing sintering.

19. The method according to claim 18 , wherein tempering is performed with a maximal temperature selected between 800° C. and 900° C. and with a retention time selected between one and two hours.

20. The method according to claim 18 , wherein air or an atmosphere with an oxygen partial pressure of 2×10-1 to 2×10-6 is selected as atmosphere while performing tempering.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 12, 2021
From: OROSEL, DENIS, DR.; WANG, YONGLI, DR.
To: TDK ELECTRONICS AG
Reel/Frame 055896/0249 →
Priority Claims (1)
DE 10 2018 125 341.9 · Oct 12, 2018 · national
Continuity (1)
Related Publication 20210296564A1 · Sep 23, 2021
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