Memory device, memory system having the same, and method of operating the same
A memory device includes a memory cell array having memory cells connected to wordlines and bitlines, and a clock buffer receiving a clock signal for performing a read operation or a write operation on at least one of the memory cells. The clock buffer includes a plurality of serially connected clock repeaters, and the plurality of clock repeaters have at least one pair of clock repeaters having different imbalanced driving capabilities.
1. A memory device comprising:
a memory cell array having memory cells connected to wordlines and bitlines; and
a clock buffer configured to receive a clock signal for performing a read operation or a write operation on at least one of the memory cells,
wherein the clock buffer includes a plurality of serially connected clock repeaters, and
wherein the plurality of clock repeaters include at least one pair of clock repeaters comprising a first clock repeater in which a driving capability of a P-channel metal oxide semiconductor (PMOS) transistor is higher than a driving capability of an N-channel metal oxide semiconductor (NMOS) transistor, and a second clock repeater in which a driving capability of a PMOS transistor is lower than a driving capability of an NMOS transistor.
2. The memory device of claim 1 , wherein each of the plurality of clock repeaters includes a first inverter configured to invert the clock signal, and a second inverter configured to invert a clock signal output from the first inverter.
3. The memory device of claim 2 , wherein in each first inverter, a PMOS transistor and an NMOS transistor have a balanced driving capability, and in each second inverter, a PMOS transistor and an NMOS transistor have an imbalanced driving capability.
4. The memory device of claim 2 , wherein each of the first and second inverters includes,
a PMOS transistor having a gate receiving the clock signal and a source connected to a power terminal; and
an NMOS transistor having a gate receiving the clock signal, a drain connected to a drain of the PMOS transistor, and a source connected to a ground terminal.
5. The memory device of claim 1 , wherein in at least one of the first clock repeater and the second clock repeater, a degree of imbalance between the driving capability of the NMOS transistor and the PMOS transistor is controlled by a doping concentration, a channel width/length of a transistor, a metal contact, at least one voltage, or a layout.
6. The memory device of claim 1 , wherein the plurality of clock repeaters include a first clock repeater having an imbalanced driving capability in a first direction and a second clock repeater having an imbalanced driving capability in a second direction,
wherein the first direction is a direction to increase pull-up strength of the driving capability, and
wherein the second direction is a direction to increase pull-down strength of the driving capability.
7. The memory device of claim 6 , wherein the first clock repeater and the second clock repeater are disposed consecutively and sequentially.
8. The memory device of claim 6 , wherein a clock repeater having a balanced characteristic of the driving capability is disposed between the first clock repeater and the second clock repeater.
9. The memory device of claim 1 , further comprising a phase detector configured to detect a phase difference between an input terminal and an output terminal of the clock buffer,
wherein the at least one clock repeater is configured to be bypassed based on the phase difference.
10. A memory device comprising:
a first clock repeater; and
a second clock repeater,
wherein each of the first and second clock repeaters includes a first inverter configured to invert a clock signal, and a second inverter configured to invert a clock signal output from the first inverter,
wherein the second inverter of the first clock repeater has an imbalanced driving capability in a first direction, and
wherein the second inverter of the second clock repeater has an imbalanced driving capability in a second direction.
11. The memory device of claim 10 , wherein the first clock repeater is connected to the second clock repeater through a metal line,
wherein the metal line is longer than a first path between the first inverter and the second inverter of the first clock repeater and is longer than a second path between the first inverter and the second inverter of the second clock repeater.
12. The memory device of claim 11 , wherein the first direction is a direction to increase pull-up strength of a driving capability, and
the second direction is a direction to increase pull-down strength of the driving capability.
13. The memory device of claim 11 , wherein the first direction is a direction to increase pull-down strength of a driving capability, and
the second direction is a direction to increase pull-up strength of the driving capability.
14. The memory device of claim 11 , further comprising a clock repeater between an output terminal of the first clock repeater and an input terminal of the second clock repeater,
wherein a first inverter of the clock repeater and a second inverter of the clock repeater have a balanced characteristic of driving capabilities.
15. The memory device of claim 11 , wherein the clock signal is a data transfer clock.
16. A memory system comprising:
a memory device; and
a memory controller configured to control the memory device,
wherein the memory device includes a clock buffer receiving a clock signal from the memory controller, the clock buffer configured to receive a clock signal for performing a read operation or a write operation on at least one memory cell of the memory device,
wherein the clock buffer includes a plurality of serially connected clock repeaters, and
wherein the plurality of clock repeaters have at least one pair of clock repeaters comprising a first clock repeater in which a driving capability of a PMOS transistor is higher than a driving capability of an NMOS transistor, and a second clock repeater in which a driving capability of a PMOS transistor is lower than a driving capability of an NMOS transistor.
17. The memory system of claim 16 , wherein the plurality of clock repeaters include,
first clock repeaters having a first imbalanced driving capability, and
second clock repeaters having a second imbalanced driving capability,
wherein the first imbalanced driving capability and the second imbalanced driving capability are different from each other.
18. The memory system of claim 16 , wherein the plurality of clock repeaters include,
a coarse clock repeater path configured to receive the clock signal; and
a fine clock repeater path configured to receive a clock signal output from the coarse clock repeater path,
wherein a magnitude of a driving capability of the coarse clock repeater path is greater than a magnitude of a driving capability of the fine clock repeater path.
19. The memory system of claim 18 , wherein at least one of the coarse clock repeater path and the fine clock repeater path includes a clock repeater having an imbalanced driving capability.
20. The memory system of claim 18 , wherein the memory device is configured to monitor a duty cycle of the clock buffer, and
wherein the memory controller is configured to adjust a duty cycle of the clock buffer according to a result of the monitoring.