Detection device with stacked photodiodes
According to an aspect, a detection device includes a plurality of optical sensors arranged on a substrate. Each of the optical sensors includes a first photodiode and a second photodiode that is coupled in series and in an opposite direction to the first photodiode.
1. A detection device comprising
a plurality of optical sensors arranged on a substrate in first and second directions along a plane of the substrate which has a normal direction orthogonal to the plane of the substrate, wherein
each of the optical sensors comprises:
a first photodiode; and
a second photodiode that is coupled in series and in an opposite direction to the first photodiode, wherein
the first photodiode is stacked on the second photodiode in the normal direction,
the optical sensors are configured such that a first electrode, an electron transport layer, a first active layer, a hole transport layer, a second active layer, and a second electrode are stacked in the normal direction of the substrate in the order as listed,
the first active layer includes a p-n heterojunction of the first photodiode,
the second active layer includes a p-n heterojunction of the second photodiode,
the first active layer is in direct contact with the hole transport layer, and
the second active layer is in direct contact with the hole transport layer.
2. The detection device according to claim 1 , wherein the first photodiode and the second photodiode have different sensitivity characteristics from each other with respect to a wavelength of light.
3. The detection device according to claim 1 , wherein
the first photodiode is configured to detect visible light, and
the second photodiode is configured to detect near-infrared light.
4. The detection device according to claim 1 , further comprising a drive signal supply circuit configured to supply a drive signal to the optical sensors, wherein
the drive signal supply circuit is configured to supply a first voltage signal having a higher-level voltage than that of a reference potential and a second voltage signal having a lower-level voltage than that of the reference potential to the optical sensors in a time-division manner.
5. The detection device according to claim 1 , wherein
the second photodiode is configured to perform detection when the first photodiode is driven in a forward biased state and the second photodiode is driven in a reverse biased state, and
the first photodiode is configured to perform detection when the first photodiode is driven in the reverse biased state and the second photodiode is driven in the forward biased state.
6. The detection device according to claim 1 , wherein
the optical sensors correspond to a plurality partial detection areas arranged in a matrix having a row-column configuration,
the first photodiodes of the optical sensors are disposed on a different plane from a plane on which the second photodiodes of the optical sensors are disposed, and
the first photodiodes are non-uniform and the second photodiodes are non-uniform such that a current flowing through the optical sensor during an exposure period varies for each of the partial detection areas.
7. The detection device according to claim 1 , wherein
no electron transport layer is formed between the first active layer and the second active layer.