Image sensor
An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a first pixel isolation structure disposed in a first trench which vertically extends from the first surface of the semiconductor substrate and defines a plurality of pixel regions, and a second pixel isolation structure disposed in a second trench vertically extending from the second surface of the semiconductor substrate. The second pixel isolation structure overlaps the first pixel isolation structure. The first pixel isolation structure includes a liner semiconductor pattern defining a gap region in the first trench, the liner semiconductor pattern including sidewall portions and a bottom portion connecting the sidewall portions, a liner insulating pattern disposed between the liner semiconductor pattern and the semiconductor substrate, and a capping insulating pattern disposed in the gap region of the liner semiconductor pattern.
1. An image sensor, comprising:
a semiconductor substrate having a first surface and a second surface opposite to the first surface;
a first pixel isolation structure disposed in a first trench,
wherein the first trench vertically extends from the first surface of the semiconductor substrate and defines a plurality of pixel regions; and
a second pixel isolation structure disposed in a second trench,
wherein the second trench vertically extends from the second surface of the semiconductor substrate, and the second pixel isolation structure overlaps the first pixel isolation structure,
wherein the first pixel isolation structure comprises:
a liner semiconductor pattern,
wherein the liner semiconductor pattern defines a gap region in the first trench, and comprises a plurality of sidewall portions and a bottom portion connecting the sidewall portions;
a liner insulating pattern disposed between the liner semiconductor pattern and the semiconductor substrate; and
a capping insulating pattern disposed in the gap region of the liner semiconductor pattern.
2. The image sensor of claim 1 , wherein the first pixel isolation structure comprises an air gap defined in the gap region by the capping insulating pattern.
3. The image sensor of claim 1 , wherein the first pixel isolation structure comprises a plurality of first portions extending in a first direction and a plurality of second portions intersecting the first portions and extending in a second direction, and
wherein the liner semiconductor pattern continuously extends in the first direction and the second direction.
4. The image sensor of claim 1 , wherein a thickness of the bottom portion of the liner semiconductor pattern is substantially equal to or greater than a thickness of each of the sidewall portions.
5. The image sensor of claim 1 , wherein the bottom portion of the liner semiconductor pattern is adjacent to the second pixel isolation structure, and
wherein each of upper portions of the sidewall portions of the liner semiconductor pattern has a thickness which becomes progressively less toward the first surface.
6. The image sensor of claim 1 , further comprising:
a device isolation layer adjacent to the first surface of the semiconductor substrate in each of the pixel regions,
wherein top surfaces of the sidewall portions of the liner semiconductor pattern are located at a level between a bottom surface of the device isolation layer and the second pixel isolation structure.
7. The image sensor of claim 1 , further comprising:
a device isolation layer adjacent to the first surface of the semiconductor substrate in each of the pixel regions,
wherein top surfaces of the sidewall portions of the liner semiconductor pattern are located at a level between a bottom surface of the device isolation layer and the first surface of the semiconductor substrate.
8. The image sensor of claim 1 , wherein the liner semiconductor pattern and the semiconductor substrate comprise dopants having a first conductivity type.
9. The image sensor of claim 8 , further comprising:
a plurality of photoelectric conversion regions respectively disposed in the pixel regions and comprising dopants having a second conductivity type,
wherein the sidewall portions of the liner semiconductor pattern surround each of the photoelectric conversion regions when viewed in a plan view.
10. The image sensor of claim 1 , further comprising:
a backside contact plug penetrating a portion of the second pixel isolation structure and connected to the liner semiconductor pattern,
wherein the bottom portion of the liner semiconductor pattern is adjacent to the second pixel isolation structure.
11. The image sensor of claim 1 , wherein a portion of the liner insulating pattern is disposed between the second pixel isolation structure and the bottom portion of the liner semiconductor pattern.
12. The image sensor of claim 1 , wherein the first pixel isolation structure has a maximum width at the first surface of the semiconductor substrate, and
wherein the second pixel isolation structure has a maximum width at the second surface of the semiconductor substrate.
13. The image sensor of claim 1 , wherein a vertical length of the first pixel isolation structure is greater than or substantially equal to a vertical length of the second pixel isolation structure.
14. An image sensor, comprising:
a semiconductor substrate having a first surface and a second surface opposite to the first surface;
a first pixel isolation structure,
wherein the first pixel isolation structure vertically extends from the first surface toward the second surface and surrounds each of a plurality of pixel regions, and comprises a liner semiconductor pattern comprising a plurality of sidewall portions and a bottom portion connecting the sidewall portions;
a second pixel isolation structure,
wherein the second pixel isolation structure vertically extends from the second surface toward the first surface and overlaps the first pixel isolation structure; and
a backside contact plug,
wherein the backside contact plug penetrates a portion of the second pixel isolation structure and is connected to the liner semiconductor pattern of the first pixel isolation structure.
15. The image sensor of claim 14 , wherein the backside contact plug is in contact with the sidewall portions of the liner semiconductor pattern.
16. The image sensor of claim 14 , wherein the backside contact plug has a width greater than a maximum width of the second pixel isolation structure.
17. The image sensor of claim 14 , wherein the first pixel isolation structure further comprises a liner insulating pattern disposed between the liner semiconductor pattern and the semiconductor substrate and a capping insulating pattern filling a gap region defined by the bottom portion and the sidewall portions of the liner semiconductor pattern, and
wherein a portion of the liner insulating pattern is disposed between the second pixel isolation structure and the bottom portion of the liner semiconductor pattern.
18. The image sensor of claim 14 , further comprising:
a device isolation layer adjacent to the first surface of the semiconductor substrate in each of the pixel regions,
wherein top surfaces of the sidewall portions of the liner semiconductor pattern are vertically spaced apart from a bottom surface of the device isolation layer.
19. The image sensor of claim 14 , wherein the first pixel isolation structure comprises a plurality of first portions extending in a first direction and a plurality of second portions intersecting the first portions and extending in a second direction, and
wherein the liner semiconductor pattern continuously extends in the first direction and the second direction.
20. An image sensor, comprising:
a semiconductor substrate having a first conductivity type, and having a first surface and a second surface opposite to the first surface;
a first pixel isolation structure vertically extending from the first surface toward the second surface and surrounding each of a plurality of pixel regions,
wherein the first pixel isolation structure comprises:
a liner semiconductor pattern comprising a plurality of sidewall portions and a bottom portion connecting the sidewall portions;
a liner insulating pattern disposed between the semiconductor substrate and the liner semiconductor pattern; and
a capping insulating pattern disposed on the liner semiconductor pattern;
a second pixel isolation structure vertically extending from the second surface toward the first surface and overlapping the first pixel isolation structure;
a photoelectric conversion region disposed in the semiconductor substrate of each of the pixel regions and comprising dopants having a second conductivity type;
a device isolation layer defining an active portion at the first surface of the semiconductor substrate in each of the pixel regions,
wherein the device isolation layer is adjacent to the first surface of the semiconductor substrate;
a transfer gate electrode disposed on the active portion of each of the pixel regions;
a backside contact plug penetrating a portion of the second pixel isolation structure and connected to the liner semiconductor pattern of the first pixel isolation structure;
a plurality of color filters corresponding to the pixel regions disposed on the second surface of the semiconductor substrate;
a grid structure disposed between the color filters and overlapping the second pixel isolation structure; and
a plurality of micro lenses disposed on the color filters.