Semiconductor devices including insulation patterns with different carbon concentrations
A semiconductor device includes a gate structure disposed on a substrate; a source and drain layer disposed on the substrate adjacent the gate structure; a first contact plug disposed on the source and drain layer, an insulation pattern structure disposed on the first contact plug, the insulation pattern structure including insulation patterns having different carbon concentrations; and a second contact plug disposed on the gate structure.
1. A semiconductor device, comprising:
a gate structure disposed on a substrate;
a source and drain layer disposed on the substrate adjacent the gate structure;
a first contact plug disposed on the source and drain layer;
an insulation pattern structure disposed on the first contact plug, the insulation pattern structure including insulation patterns having different carbon concentrations; and
a second contact plug disposed on the gate structure,
wherein the insulation pattern structure comprises a first insulation pattern, a second insulation pattern, and a third insulation pattern sequentially stacked in a vertical direction substantially perpendicular to an upper surface of the substrate,
wherein the second contact plug is in contact with upper surfaces of the first insulation pattern and the second insulation pattern, and
wherein a dielectric constant of the second insulation pattern is greater than a dielectric constant of the first insulation pattern, based on a carbon concentration of the second insulation pattern being greater than a carbon concentration of the first insulation pattern.
2. The semiconductor device as claimed in claim 1 , wherein the carbon concentration of the first insulation pattern is not smaller than a carbon concentration of the third insulation pattern.
3. The semiconductor device as claimed in claim 1 , wherein a carbon concentration of each of the first insulation pattern and the third insulation pattern is greater than about 0 atom % and less than or equal to about 7 atom %, and
wherein the carbon concentration of the second insulation pattern is greater than or equal to about 10 atom % and less than or equal to about 15 atom %.
4. The semiconductor device as claimed in claim 1 , wherein portions of surfaces of the first insulation pattern and the second insulation pattern are inclined, and
an upper surface of the third insulation pattern is flat.
5. The semiconductor device as claimed in claim 1 , wherein each of the first insulation pattern, the second insulation pattern, and the third insulation pattern comprises silicon oxycarbide (SiOC), silicon carbonitride (SiCN), silicon oxycarbonitride (SiOCN), or silicon boroncarbonitride (SiBCN).
6. The semiconductor device as claimed in claim 1 , wherein the second contact plug is in contact with an upper surface of the gate structure, and
wherein the semiconductor device further comprises a capping pattern disposed on a sidewall of a lower portion of the second contact plug and contacting the upper surface of the gate structure.
7. The semiconductor device as claimed in claim 6 , wherein an upper surface of the capping pattern is at substantially the same height as an upper surface of the first contact plug.
8. The semiconductor device as claimed in claim 1 , wherein an upper surface of the second contact plug is higher than an upper surface of the first contact plug.
9. A semiconductor device, comprising:
a plurality of channels disposed above a substrate and spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate, each of the plurality of channels extending in a first direction substantially parallel to the upper surface of the substrate;
a gate structure disposed above the substrate and extending in a second direction substantially parallel to the upper surface of the substrate and intersecting the first direction, the gate structure disposed on lower and upper surfaces of each of the plurality of channels;
a source and drain layer disposed on the substrate adjacent to the gate structure, the source and drain layer being connected to each of opposite sidewalls of the plurality of channels in the first direction;
a first contact plug disposed on the source and drain layer;
an insulation pattern structure disposed on the first contact plug, the insulation pattern structure including insulation patterns having different carbon concentrations; and
a second contact plug disposed on the gate structure,
wherein the insulation pattern structure comprises a first insulation pattern, a second insulation pattern and a third insulation pattern sequentially stacked in the vertical direction, wherein the second contact plug is in contact with upper surfaces of the first insulation pattern and the second insulation pattern, and
wherein a dielectric constant of the second insulation pattern is greater than a dielectric constant of the first insulation pattern, based on a carbon concentration of the second insulation pattern being greater than a carbon concentration of the first insulation pattern.
10. The semiconductor device as claimed in claim 9 , wherein the carbon concentration of the second insulation pattern is greater than a carbon concentration of the third insulation pattern.
11. The semiconductor device as claimed in claim 9 , wherein the second contact plug is in contact with an upper surface of the gate structure, and
wherein the semiconductor device further comprises a capping pattern disposed on a sidewall of a lower portion of the second contact plug and contacting the upper surface of the gate structure.
12. A semiconductor device, comprising:
a gate structure disposed on a substrate;
a capping pattern disposed on the gate structure;
a source and drain layer disposed on the substrate adjacent the gate structure;
a first contact plug disposed on the source and drain layer;
an insulation pattern structure disposed on the first contact plug, the insulation pattern structure including a first insulation pattern, a second insulation pattern and a third insulation pattern sequentially stacked in a vertical direction substantially perpendicular to an upper surface of the substrate, and each of the first insulation pattern, the second insulation pattern and the third insulation pattern having different carbon concentrations; and
a second contact plug disposed on the gate structure through the capping pattern, the second contact plug being connected to a portion of the insulation pattern structure,
wherein a dielectric constant of the second insulation pattern is greater than a dielectric constant of the first insulation pattern, based on a carbon concentration of the second insulation pattern being greater than a carbon concentration of the first insulation pattern.
13. The semiconductor device as claimed in claim 12 , wherein the carbon concentration of the second insulation pattern is greater than a carbon concentration of each of the first insulation pattern and the third insulation pattern.
14. The semiconductor device as claimed in claim 12 , wherein an upper surface of the capping pattern is at substantially the same height as an upper surface of the first contact plug.
15. The semiconductor device as claimed in claim 12 , wherein an upper surface of the second contact plug is higher than an upper surface of the first contact plug.
16. The semiconductor device as claimed in claim 1 , wherein the first insulation pattern is a lowermost insulation pattern of the insulation pattern structure.
17. The semiconductor device as claimed in claim 9 , wherein the first insulation pattern is a lowermost insulation pattern of the insulation pattern structure.
18. The semiconductor device as claimed in claim 12 , wherein the first insulation pattern is a lowermost insulation pattern of the insulation pattern structure.