Quantum dot layer for color, micro-led displays
Color conversion layers, methods of making color conversion layers, monolithic color, micro-light-emitting diode displays and methods of making monolithic, color, micro-light-emitting diode displays are disclosed.
1. A color conversion layer comprising:
a first plurality of color conversion pixels configured to emit light in a first wavelength range and comprising a first plurality of quantum dots;
a second plurality of color conversion pixels configured to emit light in a second wavelength range and comprising a second plurality of quantum dots; and
a third plurality of color conversion pixels configured to emit light in a third wavelength range comprising a transparent fill material; wherein,
each first color conversion pixel is adjacent to a second color conversion pixel and to a third color conversion pixel;
the first wavelength range, the second wavelength range, and the third wavelength range are different wavelength ranges;
each of the color conversion pixels independently has a diameter from 0.5 μm to 5 μm;
each of the color conversion pixels independently has a height/diameter ratio greater than 1; and
the color conversion pixels are configured in an array wherein,
the color conversion pixels are disposed on a pitch from 0.5 μm to 5 μm; and
a gap distance between adjacent color conversion pixels is less than the pitch.
2. The color conversion layer of claim 1 , wherein each of the color conversion pixels has a same diameter.
3. The color conversion layer of claim 1 , wherein each of the color conversion pixels has a same height/diameter ratio.
4. The color conversion layer of claim 1 , wherein the gap distance between the adjacent color conversion pixels is less than the diameter of the adjacent color conversion pixels.
5. The color conversion layer of claim 1 , wherein the gap distance between the adjacent color conversion pixels is less than 5 μm.
6. The color conversion layer of claim 1 , wherein a pitch of the adjacent color conversion pixels is from 0.5 μm to 5 μm.
7. The color conversion layer of claim 6 , wherein the gap distance between the adjacent color conversion pixels is from 0.5 μm to 3 μm.
8. The color conversion layer of claim 6 , wherein the gap distance between the adjacent color conversion pixels is less than half the pitch.
9. The color conversion layer of claim 1 , wherein,
the diameter is from 0.5 μm to 1.5 μm; and
the height/diameter ratio is from 2 to 5.
10. The color conversion layer of claim 9 , wherein the adjacent color conversion pixels have:
a pitch from 0.6 μm to 5 μm; and
the gap distance is less than the pitch.
11. The color conversion layer of claim 1 , wherein the transparent fill material is transparent in a blue wavelength range.
12. The color conversion layer of claim 1 , wherein the first wavelength range comprises a red wavelength range.
13. The color conversion layer of claim 1 , wherein the second wavelength range comprises a green wavelength range.
14. The color conversion layer of claim 1 , wherein the color conversion pixels are arranged in a regular square array.
15. The color conversion layer of claim 14 , wherein,
the first plurality of color conversion pixels comprise red-emitting pixels;
the second plurality of color conversion pixels comprise green-emitting pixels;
the third plurality of color conversion pixels comprise blue-emitting pixels; and
each of the first plurality of color conversion pixels is adjacent to two of the second plurality of color conversion pixels and to two of the third plurality of color conversion pixels.
16. The color conversion layer of claim 14 , wherein a unit cell of the regular square array comprises two red-emitting color conversion pixels, one green-emitting color conversion pixel, and one blue-emitting color conversion pixel.
17. The color conversion layer of claim 1 , comprising a first passivation layer overlying the first plurality of color conversion pixels, the third plurality of color conversion pixels, and sidewalls of the second plurality of color conversion pixels.
18. The color conversion layer of claim 17 , wherein the first passivation layer comprises Al 2 O 3 .
19. The color conversion layer of claim 17 , wherein the first passivation layer has a thickness from 10 nm to 100 nm.
20. The color conversion layer of claim 1 , comprising an optical layer overlying the color conversion layer.
21. The color conversion layer of claim 20 , wherein the optical layer comprises a plurality of micro-lenses independently configured to focus light emitted by a plurality of color conversion pixels.
22. A monolithic, multi-color, micro-light-emitting diode (micro-LED) display comprising the color conversion layer of claim 1 .
23. The display of claim 22 , comprising a micro-LED layer bonded to the color conversion layer.
24. The display of claim 23 wherein,
the micro-LED layer comprises a plurality of micro-LEDs; and
each of the color conversion pixels overlies a respective micro-LED.
25. The display of claim 24 , wherein each of the micro-LEDs has a same structure.
26. The display of claim 24 , wherein each of the micro-LEDs is selected from a GaN quantum well micro-LED, an InGaN-based quantum well micro-LED, and an InAlGaN quantum well micro-LED.
27. The display of claim 23 , comprising a complementary metal oxide semiconductor driver layer bonded to the micro-LED layer.
28. An electronic device comprising the display of claim 22 .
29. An electronic device comprising the color conversion layer of claim 1 .