IP Library Granted Patent US 12,243,718
Granted Patent B2
US 12,243,718 · App. 17/599,912 · Granted Mar 4, 2025

Plasma processing method and plasma processing apparatus

Inventors: Eiki Kamata (Yamanashi, JP); Mikio Sato (Yamanashi, JP); Taro Ikeda (Yamanashi, JP); Nobuhiko Yamamoto (Yamanashi, JP)
Assignee: Tokyo Electron Limited
H01J37/3222H01J37/32238H01J2237/332H01J2237/334
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,243,718
App. No.
17/599,912
Granted
Mar 4, 2025
Kind
B2
Abstract

There is provided a plasma processing method in a plasma processing apparatus including a chamber, a stage on which a substrate is placed in the chamber, a plurality of radiating devices configured to radiate a plurality of electromagnetic waves, and a dielectric window disposed between the plurality of radiating devices and the stage. The method comprises: preparing the substrate on the stage; controlling a phase of at least one of the plurality of electromagnetic waves radiated from the plurality of radiating devices; radiating the plurality of electromagnetic waves into the chamber from the plurality of radiating devices; and processing the substrate using localized plasma generated from a gas supplied between the dielectric window and the stage.

Claims (24)

1. A plasma processing method in a plasma processing apparatus including a chamber, a stage on which a substrate is placed in the chamber, a plurality of radiating devices configured to radiate a plurality of electromagnetic waves, and a dielectric window disposed between the plurality of radiating devices and the stage, the method comprising:

preparing the substrate on the stage;

controlling a phase of at least one of the plurality of electromagnetic waves from the plurality of radiating devices;

propagating the plurality of electromagnetic waves from the plurality of radiating devices into a space above the dielectric window for focusing electromagnetic waves, concentrating the electromagnetic waves from the plurality of radiating devices at a predetermined position on the dielectric window, and radiating the concentrated electromagnetic waves into a space below the dielectric window, wherein the dielectric window is a partition plate that divides an inside of the chamber into the space above the dielectric window and the space below the dielectric window; and

processing the substrate using localized plasma generated from a gas supplied between the dielectric window and the stage.

2. The plasma processing method of claim 1 , wherein the dielectric window is separated from the plurality of radiating devices and the stage, and

wherein in said processing the substrate, the localized plasma is generated in the space below the dielectric window.

3. The plasma processing method of claim 2 , wherein a vertical distance from the plurality of radiating devices to the dielectric window is greater than ¼ of a wavelength λ of the electromagnetic wave.

4. The plasma processing method of claim 1 , wherein each of the plurality of radiating devices has a monopole antenna.

5. The plasma processing method of claim 1 , wherein a distance from a center of the radiating device to a center of an adjacent radiating device is smaller than ½ of a wavelength λ of the electromagnetic wave.

6. The plasma processing method of claim 1 , wherein the plurality of electromagnetic waves have a frequency of 100 MHz or higher.

7. The plasma processing method of claim 6 , wherein the plurality of electromagnetic waves have a frequency of 1 GHz to 3 GHz.

8. The plasma processing method of claim 1 , wherein a region where the localized plasma is generated is controlled by changing phases of the plurality of electromagnetic waves over time.

9. A plasma processing apparatus comprising:

a chamber;

a stage on which a substrate is placed in the chamber;

a plurality of radiating devices configured to radiate a plurality of electromagnetic waves;

a dielectric window disposed between the plurality of the radiating devices and the stage, wherein the dielectric window is a partition plate that divides an inside of the chamber into a space above the dielectric window for focusing electromagnetic waves and a space below the dielectric window; and

a controller,

wherein the controller is configured to control:

preparing the substrate on the stage;

controlling a phase of at least one of the plurality of electromagnetic waves from the plurality of radiating devices;

propagating the plurality of electromagnetic waves from the plurality of radiating devices into the space above the dielectric window, concentrating the electromagnetic waves from the plurality of radiating devices at a predetermined position on the dielectric window, and radiating the concentrated electromagnetic waves into the space below the dielectric window; and

processing the substrate using localized plasma generated from a gas supplied between the dielectric window and the stage.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 29, 2021
From: KAMATA, EIKI; SATO, MIKIO; IKEDA, TARO; YAMAMOTO, NOBUHIKO
To: TOKYO ELECTRON LIMITED
Reel/Frame 057646/0091 →
Priority Claims (1)
JP 2019-071541 · Apr 3, 2019 · national
Continuity (1)
Related Publication 20220199369A1 · Jun 23, 2022
References Cited (47)
US 5234526A · Chen · 1993 [cited by examiner]
US 5803975A · Suzuki · 1998 [cited by examiner]
US 6140773A · Anders · 2000 [cited by examiner]
US 6313584B1 · Johnson · 2001 [cited by examiner]
US 6527908B2 · Kanetsuki · 2003 [cited by examiner]
US 6780278B2 · Hayashi · 2004 [cited by examiner]
US 8525412B2 · Espiau · 2013 [cited by examiner]
US 8773018B2 · Hensley · 2014 [cited by examiner]
US 8988012B2 · Yoshikawa · 2015 [cited by examiner]
US 9159536B2 · Kaneko · 2015 [cited by examiner]
US 9734990B2 · Chang · 2017 [cited by examiner]
US 9767993B2 · Ishibashi · 2017 [cited by examiner]
US 10074524B2 · Kaneko · 2018 [cited by examiner]
US 10529541B2 · Lai · 2020 [cited by examiner]
US 10957518B2 · Ramaswamy · 2021 [cited by examiner]
US 11694911B2 · Yang · 2023 [cited by examiner]
US 11749511B2 · Yamazaki · 2023 [cited by examiner]
US 20030052085A1 · Parsons · 2003 [cited by examiner]
US 20080050292A1 · Godyak · 2008 [cited by examiner]
US 20100175832A1 · Nishio · 2010 [cited by examiner]
US 20100175833A1 · Nishio · 2010 [cited by examiner]
US 20100230053A1 · Nishio · 2010 [cited by examiner]
US 20110061814A1 · Ikeda · 2011 [cited by examiner]
US 20110284167A1 · Nishio · 2011 [cited by examiner]
US 20150013907A1 · Fujii · 2015 [cited by examiner]
US 20150013911A1 · Iwao · 2015 [cited by examiner]
US 20150015139A1 · Kaneko · 2015 [cited by examiner]
US 20150194290A1 · Nozawa · 2015 [cited by examiner]
US 20150214011A1 · Kaneko · 2015 [cited by examiner]
US 20170110289A1 · Nishio · 2017 [cited by examiner]
US 20180179626A1 · Inglis · 2018 [cited by examiner]
US 20190075644A1 · Ikeda · 2019 [cited by examiner]
US 20200161099A1 · Park · 2020 [cited by examiner]
US 20210125814A1 · Sato · 2021 [cited by examiner]
US 20210151326A1 · Shimizu · 2021 [cited by examiner]
US 20210225612A1 · Kamata · 2021 [cited by examiner]
US 20210225623A1 · Yamazaki · 2021 [cited by examiner]
US 20210249240A1 · Itoh · 2021 [cited by examiner]
US 20220199369A1 · Kamata · 2022 [cited by examiner]
US 20230326716A1 · Kamata · 2023 [cited by examiner]
JP 2015053172A · 2015 [cited by applicant]
JP 2017103454A · 2017 [cited by applicant]
JP 2018181634A · 2018 [cited by applicant]
JP 2021044201A · 2021 [cited by examiner]
WO WO2011040328A1 · 2011 [cited by examiner]
WO WO2013102964A1 · 2013 [cited by examiner]
PCT International Search Report, PCT Application No. PCT/JP2020/012686, Jun. 9, 2020, 9 pages (with English translation of PCT International Search Report). [cited by applicant]
Cited By (1)
US 12,394,592