Semiconductor structure and method for forming the same
A method includes forming a conductive member over a first conductive line; forming a second conductive line over the conductive member; and removing a portion of the conductive member exposed by the second conductive line to form a conductive via. The formation of the second conductive line is implemented prior to the formation of the conductive via. A semiconductor structure includes a first conductive line having a first surface; a second conductive line disposed above the first conductive line and having a second surface overlapping the first surface; and a conductive via electrically connected to the first surface and the second surface. The conductive via includes a first end disposed within the first surface, a second end disposed within the second surface, and a cross-section between the first end and the second end, wherein at least two of interior angles of the cross-section are substantially unequal to 90°.
1. A method of manufacturing a semiconductor structure, comprising:
forming a first conductive line over a substrate;
forming a conductive member over the first conductive line;
forming a second conductive line over the first conductive line and the conductive member, wherein the second conductive line has a second surface overlapping and conformal to a first surface of the first conductive line; and
removing a portion of the conductive member exposed by the second conductive line to form a conductive via extending between the first conductive line and the second conductive line,
wherein the formation of the second conductive line is implemented prior to the removal of the portion of the conductive member and the formation of the conductive via,
after the conductive via is formed, the first surface is in contact with a first end of the conductive via, and the second surface is in contact with a second end of the conductive via, and an area of the second surface of the second conductive line is greater than an area of the second end of the conductive via.
2. The method of claim 1 , further comprising:
disposing a dielectric layer over the first conductive line and surrounding the conductive via and the second conductive line.
3. The method of claim 1 , further comprising:
disposing a first dielectric layer over the substrate;
forming the first conductive line and the conductive member within the first dielectric layer, wherein a top surface of the first dielectric layer is coplanar with a top surface of the conductive member;
forming the second conductive line over the conductive member and the first dielectric layer prior to the formation of the conductive via; and
disposing a second dielectric layer to surround the second conductive line and the conductive via.
4. The method of claim 1 , further comprising:
determining an overlap area of the first conductive line and the second conductive line before the formation of the second conductive line,
wherein a width of the overlap area is greater than a width of the second conductive line.
5. The method of claim 1 , wherein the first conductive line extends along a first direction, the second conductive line extends along a second direction different from the first direction, and at least two of interior angles of a cross-section of the conductive via are substantially unequal to 90°.
6. The method of claim 1 , wherein the conductive member overlaps and is parallel to the first conductive line.
7. A method of manufacturing a semiconductor structure, comprising:
forming a stack including a first conductive layer and a conductive member layer over the first conductive layer;
patterning the conductive member layer to form a conductive member, wherein at least a portion of the first conductive layer is exposed by the conductive member;
patterning the first conductive layer to form a first conductive line and to align the first conductive line with the conductive member from a top view perspective, wherein the conductive member and the first conductive line are stacked and aligned with each other; and
patterning the conductive member to form a conductive via over the first conductive layer, wherein at least a portion of the first conductive line is exposed by the conductive via.
8. The method of claim 7 , further comprising:
forming a first mask over the conductive member layer, and
forming a second mask over the conductive member.
9. The method of claim 8 , wherein a width of the second mask is greater than or equal to a width of the conductive member.
10. The method of claim 7 , wherein a portion of the conductive via is aligned with the first conductive line.
11. The method of claim 7 , further comprising:
forming a second conductive line over the conductive via
wherein the first conductive line and the conductive member extend along a first direction, and the second conductive line extends along a second direction different from the first direction.
12. The method of claim 7 , wherein a portion of the first conductive line is exposed by the conductive via and the second conductive line.
13. A method of manufacturing a semiconductor structure, comprising:
disposing a first dielectric layer over a substrate;
forming a first conductive line and a conductive member within the first dielectric layer, wherein a top surface of the first dielectric layer is coplanar with a top surface of the conductive member;
determining an overlap area of the first conductive line and a second conductive line before the formation of the second conductive line, wherein a width of the overlap area is greater than a width of the second conductive line;
removing a first portion of the conductive member outside of the overlap area;
forming the second conductive line over the first conductive line, the conductive member and the first dielectric layer, wherein a portion of the second conductive line is disposed in the overlap area; and
removing a second portion of the conductive member exposed by the second conductive line to form a conductive via extending between the first conductive line and the second conductive line.
14. The method of claim 13 , further comprising:
disposing a second dielectric layer to surround the second conductive line and the conductive via.
15. The method of claim 13 , wherein the conductive via includes a first end and a second end, and a cross-section is disposed between the first end and the second end, wherein at least two of interior angles of the cross-section are substantially unequal to 90°.
16. The method of claim 15 , wherein the cross-section of the conductive via is positioned to overlap with the first conductive line or the second conductive line from a top view perspective by a predetermined inset distance.
17. The method of claim 13 , wherein a width of the first conductive line is different from a width of the second conductive line.
18. The method of claim 15 , wherein the cross-section of the conductive via is a convex polygon, a parallelogram, a trapezoid or an oval.
19. The method of claim 15 , wherein the cross-section of the conductive via includes a first pair of sides extending along the first direction and aligned with edges of the first conductive line.
20. The method of claim 15 , wherein the cross-section of the conductive via includes a fillet or a chamfer adjacent to a corner of the cross-section.