Semiconductor device and method
Methods for forming under-bump metallurgy (UBM) structures having different surface profiles and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a first under-bump metallurgy (UBM) structure over and electrically coupled to the first redistribution line, the first UBM structure extending through the first passivation layer, a top surface of the first UBM structure being concave; and a second UBM structure over and electrically coupled to the second redistribution line, the second UBM structure extending through the first passivation layer, a top surface of the second UBM structure being flat or convex.
1. A semiconductor device comprising:
a first redistribution line and a second redistribution line over a semiconductor substrate;
a first passivation layer over the first redistribution line and the second redistribution line;
a first under-bump metallurgy (UBM) structure over and electrically coupled to the first redistribution line, the first UBM structure extending through the first passivation layer, wherein a top surface of the first UBM structure is concave; and
a second UBM structure over and electrically coupled to the second redistribution line, the second UBM structure extending through the first passivation layer, wherein an entirety of a top surface of the second UBM structure is flat or convex.
2. The semiconductor device of claim 1 , wherein the first UBM structure has a first width greater than a second width of the second UBM structure.
3. The semiconductor device of claim 1 , wherein the first UBM comprises a via portion extending through the first passivation layer, and wherein a centerline of the via portion is misaligned with a centerline of a concave portion of the top surface of the first UBM structure.
4. The semiconductor device of claim 1 , wherein the first UBM comprises a via portion extending through the first passivation layer, and wherein a width of the via portion is less than a width of a concave portion of the top surface of the first UBM structure.
5. The semiconductor device of claim 1 , further comprising a polymer layer over the first passivation layer, the first UBM structure and the second UBM structure extending through the polymer layer, wherein the UBM structure has a first height over the polymer layer, wherein the second UBM structure has a second height over the polymer layer, and wherein a difference between the first height and the second height is less than 3 μm.
6. The semiconductor device of claim 1 , further comprising:
a first conductive connector over the first UBM structure, wherein an upper extent of a top surface of the first UBM structure is disposed a first distance over a top surface of the first passivation layer; and
a second conductive connector over the second UBM structure, wherein an upper extent of a top surface of the second UBM structure is disposed a second distance over the top surface of the first passivation layer, and wherein a difference between the first distance and the second distance is less than 4 μm.
7. The semiconductor device of claim 1 , wherein an upper extent of the top surface of the first UBM structure is level with an upper extent of the top surface of the second UBM structure.
8. A semiconductor device comprising:
a first redistribution line and a second redistribution line over a semiconductor substrate;
a first passivation layer over the first redistribution line and the second redistribution line;
a first under-bump metallurgy (UBM) structure over and electrically coupled to the first redistribution line, wherein a top surface of the first UBM structure is concave, wherein the first UBM structure has a first width, wherein the first UBM structure comprises a via portion extending through the first passivation layer, and wherein a centerline of the via portion is misaligned with a centerline of a concave portion of the top surface of the first UBM structure; and
a second UBM structure over and electrically coupled to the second redistribution line, wherein a bottom surface of the second UBM structure is level with a bottom surface of the first UBM structure, wherein the second UBM structure has a second width less than the first width, and wherein a top surface of the second UBM structure is less concave than the top surface of the first UBM structure.
9. The semiconductor device of claim 8 , wherein the top surface of the second UBM structure is flat.
10. The semiconductor device of claim 8 , wherein the top surface of the second UBM structure is convex.
11. The semiconductor device of claim 8 , wherein the second UBM structure extends through the first passivation layer, wherein the first UBM structure and the second UBM structure comprise horizontal portions extending along a top surface of the first passivation layer.
12. The semiconductor device of claim 8 , further comprising:
a polymer layer over the first passivation layer, wherein the first UBM structure and the second UBM structure extend through the polymer layer and the first passivation layer, and wherein the first UBM structure and the second UBM structure comprise horizontal portions extending along a top surface of the polymer layer.
13. The semiconductor device of claim 8 , wherein an upper extent of the top surface of the first UBM structure is level with an upper extent of the top surface of the second UBM structure.
14. A semiconductor device comprising:
a first conductive feature and a second conductive feature over a semiconductor substrate;
a first insulating layer over the first conductive feature and the second conductive feature;
a first under-bump metallurgy (UBM) structure over and electrically coupled to the first conductive feature, the first UBM structure extending through the first insulating layer, wherein a top surface of the first UBM structure is a concave surface; and
a second UBM structure over and electrically coupled to the second conductive feature, the second UBM structure extending through the first insulating layer, wherein a top surface of the second UBM structure is flat or convex, wherein a first height of the first UBM above the first insulating layer is different than a second height of the second UBM above the first insulating layer.
15. The semiconductor device of claim 14 , wherein the first height is in a range between 5 μm to 18 μm.
16. The semiconductor device of claim 15 , wherein a first width of the first UBM is greater than a second width of the second UBM.
17. The semiconductor device of claim 14 , wherein a depth of the concave surface of the first UBM is in a range between 0.5 μm to 6 μm.
18. The semiconductor device of claim 14 , wherein a difference in the first height and the second height is in a range between 0.01 μm to 3 μm.
19. The semiconductor device of claim 14 , wherein the first UBM has a first contact area on the first conductive feature, the second UBM has a second contact area on the second conductive feature, wherein the first contact area is greater than the second contact area.
20. The semiconductor device of claim 14 , wherein an upper surface of the second UBM is convex.