Integration of optoelectronic devices comprising lithium niobate or other Pockels materials
A method of integrating an optoelectronic device comprising a Pockels material, such as lithium niobate (LiNbO3), includes forming an optoelectronic device layer over a semiconductor layer. The optoelectronic device layer includes a patterned optoelectronic device segment in an interlayer dielectric. A window is etched in the interlayer dielectric using the patterned optoelectronic device segment as a sacrificial etch stop. The patterned optoelectronic device segment is removed in the window. The optoelectronic device comprising the Pockels material is formed in place of the removed patterned optoelectronic device segment. The optoelectronic device comprising the Pockels material may be formed from an optoelectronic chiplet.
1. A photonics structure comprising:
an optoelectronic device layer over a semiconductor layer, said optoelectronic device layer including a first optoelectronic device comprising a Pockels material and a second optoelectronic device not comprising Pockels material;
at least one dielectric situated over and around said first optoelectronic device comprising said Pockels material;
a contact electrically coupled to said first optoelectronic device comprising said Pockels material;
an interconnect metal segment situated over said at least one dielectric and electrically coupled to said contact.
2. The photonics structure of claim 1 , wherein said Pockels material is selected from the group consisting of lithium niobate (LiNbO3), lithium tantalate (LiTa), potassium dihydrogen phosphate (KDP), deuterated potassium dihydrogen phosphate (DKDP), rubidium titanyl phosphate (RTP), potassium titanyl phosphate (KTP), potassium titanyl arsenate (KTA), barium borate (BBO), barium titanate (BTO), ammonium dihydrogen phosphate (ADP), and cadmium telluride (CdTe).
3. The photonics structure of claim 1 , wherein said second optoelectronic device comprises silicon nitride (Si X N Y ).
4. The photonics structure of claim 1 , wherein said first optoelectronic device comprising said Pockels material is an electro-optic modulator.
5. The photonics structure of claim 1 , further comprising a third optoelectronic device in said semiconductor layer below said first optoelectronic device comprising said Pockels material.
6. The photonics structure of claim 5 , wherein said third optoelectronic device is a silicon (Si) waveguide.
7. The photonics structure of claim 1 , wherein said semiconductor layer is a top semiconductor layer of a semiconductor-on-insulator (SOI) substrate.
8. The photonics structure of claim 1 , wherein said at least one dielectric comprises a dielectric filler around a side of said Pockels material and a dielectric segment over said Pockels material.
9. The photonics structure of claim 8 , wherein said dielectric filler and said dielectric segment have substantially coplanar top surfaces.
10. A photonics structure comprising:
an optoelectronic device layer over a semiconductor layer, said optoelectronic device layer including a first optoelectronic device comprising a Pockels material and a second optoelectronic device not comprising Pockels material;
at least one dielectric situated over said first optoelectronic device comprising said Pockels material;
a contact electrically coupled to said first optoelectronic device comprising said Pockels material;
an interconnect metal segment electrically coupled to said contact.
11. The photonics structure of claim 10 , wherein said Pockels material is selected from the group consisting of lithium niobate (LiNbO3), lithium tantalate (LiTa), potassium dihydrogen phosphate (KDP), deuterated potassium dihydrogen phosphate (DKDP), rubidium titanyl phosphate (RTP), potassium titanyl phosphate (KTP), potassium titanyl arsenate (KTA), barium borate (BBO), barium titanate (BTO), ammonium dihydrogen phosphate (ADP), and cadmium telluride (CdTe).
12. The photonics structure of claim 10 , wherein said first optoelectronic device and said second optoelectronic device have substantially coplanar bottom surfaces further including a second optoelectronic device not comprising Pockels material.
13. The photonics structure of claim 12 , wherein said second optoelectronic device comprises silicon nitride (Si X N Y ).
14. The photonics structure of claim 10 , wherein said first optoelectronic device comprising said Pockels material is an electro-optic modulator.
15. The photonics structure of claim 12 , further comprising a third optoelectronic device in said semiconductor layer below said first optoelectronic device comprising said Pockels material.
16. The photonics structure of claim 15 , wherein said third optoelectronic device is a silicon (Si) waveguide.
17. The photonics structure of claim 10 , wherein said semiconductor layer is a top semiconductor layer of a semiconductor-on-insulator (SOI) substrate.
18. The photonics structure of claim 10 , wherein said at least one dielectric comprises a dielectric filler around a side of said Pockels material and a dielectric segment over said Pockels material.
19. The photonics structure of claim 18 , wherein said dielectric filler and said dielectric segment have substantially coplanar top surfaces.