Semiconductor device
A semiconductor device includes: a channel; a gate structure on the channel; a first source/drain arranged at a first end of the channel and including a metal; a first tunable band-gap layer arranged between the channel and the first source/drain and having a band gap that changes according to stress; a first electrostrictive layer between the gate structure and the first tunable band-gap layer, the first electrostrictive layer having a property of being deformed based on and upon application of an electric field; and a second source/drain at a second end of the channel.
1. A semiconductor device comprising:
a channel;
a gate structure on the channel;
a first source/drain at a first end of the channel, the first source/drain comprising a metal;
a first tunable band-gap layer between the channel and the first source/drain, the first tunable band-gap layer having a band gap that varies according to stress;
a first electrostrictive layer between the gate structure and the first tunable band-gap layer, the first electrostrictive layer having a property of being deformed based on and upon application of an electric field; and
a second source/drain at a second end of the channel.
2. The semiconductor device of claim 1 , wherein the band gap of the first tunable band-gap layer varies according to a voltage applied to the gate structure.
3. The semiconductor device of claim 1 , wherein:
contact resistance between the first source/drain and the first tunable band-gap layer when an ON-voltage is applied to the gate structure is less than the contact resistance between the first source/drain and the first tunable band-gap layer when an OFF-voltage is applied to the gate structure, and
the first source/drain and the first tunable band-gap layer form an Ohmic junction, when the ON-voltage is applied to the gate structure.
4. The semiconductor device of claim 1 , wherein the band gap of the first tunable band-gap layer when an OFF-voltage is applied to the gate structure is greater than the band gap of the first tunable band-gap layer when an ON-voltage is applied to the gate structure.
5. The semiconductor device of claim 1 , wherein the first tunable band-gap layer comprises a multi-layered 2-dimensional material.
6. The semiconductor device of claim 1 , further comprising:
a gate dielectric layer between the channel and the gate structure.
7. The semiconductor device of claim 1 , wherein the first electrostrictive layer extends between the channel and the gate structure.
8. The semiconductor device of claim 1 , wherein:
the second source/drain comprises a metal, and
the semiconductor device further comprises a second tunable band-gap layer between the channel and the second source/drain, the second tunable band-gap layer having a band gap that varies according to stress.
9. The semiconductor device of claim 8 , wherein the first electrostrictive layer extends between the gate structure and the second tunable band-gap layer.
10. The semiconductor device of claim 8 , further comprising:
a second electrostrictive layer between the gate structure and the second tunable band-gap layer.
11. The semiconductor device of claim 8 , wherein the band gap of the second tunable band-gap layer varies according to a voltage applied to the gate structure.
12. The semiconductor device of claim 8 , wherein:
contact resistance between the second source/drain and the second tunable band-gap layer when an ON-voltage is applied to the gate structure is less than the contact resistance between the second source/drain and the second tunable band-gap layer when an OFF-voltage is applied to the gate structure, and
the second source/drain and the second tunable band-gap layer form an Ohmic junction, when the ON-voltage is applied to the gate structure.
13. The semiconductor device of claim 8 , wherein the band gap of the second tunable band-gap layer when an OFF-voltage is applied to the gate structure is greater than the band gap of the second tunable band-gap layer when an ON-voltage is applied to the gate structure.
14. The semiconductor device of claim 8 , wherein the second tunable band-gap layer comprises a multi-layered 2-dimensional material.
15. The semiconductor device of claim 1 , further comprising
a semiconductor substrate that has a fin structure protruding from a main surface of the semiconductor substrate, wherein the channel comprises at least a portion of the fin structure of the semiconductor substrate.
16. The semiconductor device of claim 1 , further comprising:
a semiconductor substrate including a recess recessed from a main surface of the semiconductor substrate, wherein the channel comprises a portion around the recess of the semiconductor substrate.
17. The semiconductor device of claim 16 , wherein the first electrostrictive layer extends between the gate structure and the first source/drain.
18. The semiconductor device of claim 1 , wherein:
the channel comprises a plurality of portions apart from each other, and
the gate structure surrounds the plurality of portions of the channel.
19. A semiconductor device comprising:
a semiconductor substrate having a recess;
a gate structure in the recess of the semiconductor substrate;
a first source/drain on the semiconductor substrate at a first side of the gate structure, the first source/drain comprising a metal;
a 2-dimensional material layer between the semiconductor substrate and the first source/drain;
an electrostrictive layer between the gate structure and the 2-dimensional material layer, the electrostrictive layer having a property of being deformed based on and upon application of an electric field; and
a second source/drain on the semiconductor substrate at a second side of the gate structure opposite the first side.
20. A semiconductor device comprising:
a semiconductor substrate having a recess;
a gate structure in the recess of the semiconductor substrate;
a tunable band-gap layer between the semiconductor substrate and the gate structure, the tunable band-gap layer having a band gap that varies according to stress;
an electrostrictive layer between the tunable band-gap layer and the gate structure, the electrostrictive layer having a property of being deformed based on and upon application of an electric field;
a first source/drain at a first end of the tunable band-gap layer; and
a second source/drain at a second end of the tunable band-gap layer.