Film bulk acoustic resonator chip and package structure with improved power tolerance
A film bulk acoustic resonator (FBAR) chip and package structure with improved power tolerance includes: a first substrate having a plurality of FBARs each having a bottom electrode, a piezoelectric material, and a top electrode, and first bonding pads connected to the bottom electrodes or the top electrodes of the FBARs; and a second substrate having a plurality of vias passing therethrough, second bonding pads located on one end surface of the vias facing the first substrate, and external connection pads located on the other end surface of the vias which does not face the first substrate, wherein the first substrate and the second substrate are bonded by means of bonding of the first bonding pads and the second bonding pads.
1. A film bulk acoustic resonator (FBAR) chip and package structure with improved power tolerance, comprising:
a first substrate having:
a plurality of FBARs each having a bottom electrode, a piezoelectric material, and a top electrode, and
first bonding pads connected to the bottom electrodes or the top electrodes of the plurality of FBARs; and
a second substrate having:
a plurality of vias passing therethrough,
second bonding pads located on one end surface of the plurality of vias facing the first substrate, and
external connection pads located on another end surface of the plurality of vias which does not face the first substrate,
wherein the first substrate and the second substrate are bonded by means of bonding of the first bonding pads and the second bonding pads to each other,
at least some of the bottom electrodes are connected to the first bonding pads through piezoelectric layer vias filled with a conductive material, and
the plurality of vias on the second substrate comprise first vias connected to signal or ground wiring through the external connection pads, and second vias with no connection to any signal or ground wiring, and
wherein the first substrate comprises air cavities therein which are formed under a portion of the bottom electrodes stacked under the piezoelectric material and the top electrode of each FBAR, and at least a portion of the heat sink groove is formed between the air cavities, the heat sink groove being filled with a thermal dissipation material.
2. The FBAR chip and package structure according to claim 1 , wherein the first vias are filled with a conductive material, and the second vias are filled with a material having a higher thermal conductivity than the first vias.
3. The FBAR chip and package structure according to claim 2 , wherein the first vias and the second vias are filled with the same material.
4. The FBAR chip and package structure according to claim 2 , wherein the first vias and the second vias are filled with different materials from each other.
5. The FBAR chip and package structure according to claim 1 , wherein the first vias are connected to the piezoelectric layer vias.
6. The FBAR chip and package structure according to claim 1 , wherein diameters of the first vias and the second vias are different from each other.
7. The FBAR chip and package structure according to claim 6 , wherein the diameters of the second vias are larger than the diameters of the first vias.
8. The FBAR chip and package structure according to claim 1 , wherein sectional shapes of the first vias and the second vias are different from each other.
9. The FBAR chip and package structure according to claim 1 , wherein the first vias and the second vias are through silicon vias (TSVs).
10. The FBAR chip and package structure according to claim 1 , wherein the external connection pads are formed on the first vias.
11. The FBAR chip and package structure according to claim 1 , wherein if the external connection pads are formed on the second vias, the external connection pads are covered with passivation layers.
12. The FBAR chip and package structure according to claim 1 , wherein at least two or more top or bottom electrodes of the plurality of FBARs are connected unitarily with one another by means of electrode connecting parts, and when viewed on top, the second vias are formed among the at least two or more top or bottom electrodes connected unitarily with one another.
13. A film bulk acoustic resonator (FBAR) chip and package structure with improved power tolerance, comprising:
a first substrate having:
a plurality of FBARs each having a bottom electrode, a piezoelectric material, and a top electrode, and
first bonding pads connected to the bottom electrodes or the top electrodes of the plurality of FBARs; and
a second substrate having:
a plurality of vias passing therethrough,
second bonding pads located on one end surface of the plurality of vias facing the first substrate, and
external connection pads located on another end surface of the plurality of vias which does not face the first substrate,
wherein the first substrate and the second substrate are bonded by means of bonding of the first bonding pads and the second bonding pads to each other,
at least some of the bottom electrodes are connected to the first bonding pads through piezoelectric layer vias filled with a conductive material, and
the first substrate comprises a heat sink groove formed between two or more of the bottom electrodes with no connection with the first bonding pads, the heat sink groove being filled with a thermal dissipation material, and
wherein the first substrate comprises air cavities formed under a portion of the bottom electrodes stacked under the piezoelectric material and the top electrode of each FBAR, and at least a portion of the heat sink groove is formed between the air cavities.
14. The FBAR chip and package structure according to claim 13 , wherein the two or more bottom electrodes are connected unitarily with one another by means of an electrode connecting part, and at least a portion of the heat sink groove is formed under the electrode connecting part.
15. The FBAR chip and package structure according to claim 14 , wherein at least a portion of the heat sink groove is extended outward from the electrode connecting part.
16. The FBAR chip and package structure according to claim 15 , wherein an area of the heat sink groove extended outward from the electrode connecting part is larger than an area laid under the electrode connecting part.
17. The FBAR chip and package structure according to claim 15 , wherein the heat sink groove has a shape of T or a shape of ‘┐’ or ‘┌’ (which is half of T) made by removing one of a head portion of the shape of T.
18. The FBAR chip and package structure according to claim 17 , wherein the head portion of the shape of T or the shape of half of T has a larger width than another portion thereof.