IP Library › Granted Patent US 12,250,014
Granted Patent B2
US 12,250,014 · App. 17/596,963 · Granted Mar 11, 2025

THz impulse and frequency comb generation using reverse recovery of PIN diode

Inventors: Aydin Babakhani (Los Angeles, CA); Seyedmohammadreza Razavian (San Diego, CA)
Assignee: The Regents of the University of California
H04B1/10H01Q9/28H01Q13/10H03D7/12H03K3/01
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Quick Facts
Patent No.
US 12,250,014
App. No.
17/596,963
Granted
Mar 11, 2025
Kind
B2
Abstract

Many embodiments provide a frequency comb receiver that includes a PIN diode, a THz pulse generator block that generates THz tones (LO) for coherent frequency comb detection, an on-chip antenna for broadband detection and a driver stage switched by a series of buffers, where a repetition rate of the LO tones are tunable over a range and determines a spacing between two adjacent tones in the corresponding frequency comb.

Claims (29)

1. A frequency-comb radiator, comprising:

a PIN (positive, intrinsic, negative) diode;

an on-chip antenna that radiates pulses, wherein the PIN diode is coupled to the on-chip antenna through a matching network; and

a driver stage switched by an input signal through a series of buffers, the driver stage comprising a first transistor and a first transmission line, where the first transmission line is connected to an end side of the PIN diode and to the first transistor, and the first transmission line isolates the PIN diode from the first transistor;

wherein a reverse-recovery of the PIN diode caused by the switching of the driver stage is used to generate Terahertz (THz) pulses that are radiated through the on-chip antenna; and

wherein the combination of the transistor and transmission line in the driver stage causes the PIN diode to operate in a nonlinear region and the nonlinearity of the PIN diode generates the THz-pulses that are radiated through the on-chip antenna through the matching network.

2. The frequency-comb radiator of claim 1 , further comprising a hemispherical, high-impedance silicon lens placed under the on-chip antenna.

3. The frequency-comb radiator of claim 1 , wherein the frequency-comb radiator is implemented using a silicon-based technology.

4. The frequency-comb radiator of claim 1 , wherein the frequency-comb radiator radiates a wideband frequency comb in the THz regime through the on-chip antenna.

5. The frequency-comb radiator of claim 4 , wherein a spacing between THz tones is programmed by tuning a frequency of an input trigger.

6. The frequency-comb radiator of claim 1 , further comprising a non-linear Q-Switching Impedance (NLQSI) circuit for tuning at least one of amplitude and phase of the frequency tones.

7. The frequency-comb radiator of claim 1 , wherein the on-chip antenna is a coplanar waveguide-fed (CPW) slot bow-tie antenna.

8. The frequency-comb radiator of claim 1 , wherein the driver stage is switched by a series of edge-sharpening inverting buffers.

9. The frequency-comb radiator of claim 1 , where the input signal is a periodic signal.

10. The frequency-comb radiator of claim 1 , where the driver stage further comprises a second transistor and a second transmission line, the second transistor connected between the first transistor and the series of buffers and the second transmission line connected between the second transistor and ground.

11. A method of frequency comb radiation, the method comprising:

radiating pulses using an on-chip antenna coupled to a PIN (positive, intrinsic, negative) diode through a matching network;

driving the PIN diode using a driver stage switched by an input signal through a series of buffers, the driver stage comprising a first transistor and a first transmission line, where the first transmission line is connected to an end side of the PIN diode and to the first transistor, and the first transmission line isolates the PIN diode from the first transistor; and

generating Terahertz (THz) pulses using a reverse-recovery of the PIN diode caused by the switching of the driver stage, wherein the THz-pulses are radiated through the on-chip antenna;

wherein the combination of the transistor and transmission line in the driver stage causes the PIN diode to operate in a nonlinear region and the nonlinearity of the PIN diode generates the THz-pulses that are radiated through the on-chip antenna through the matching network.

12. The method of claim 11 , wherein a hemispherical, high-impedance silicon lens is positioned under the on-chip antenna.

13. The method of claim 11 , wherein a frequency-comb radiation is implemented using a silicon-based technology.

14. The method of claim 11 , wherein a frequency-comb radiates a wideband frequency comb in the THz regime through the on-chip antenna.

15. The method of claim 14 , wherein a spacing between THz tones is programmed by tuning a frequency of an input trigger.

16. The method of claim 11 , further comprising tuning, using a non-linear Q-Switching Impedance (NLQSI) circuit, at least one of amplitude and phase of the frequency tones.

17. The method of claim 11 , wherein the on-chip antenna is a coplanar waveguide-fed (CPW) slot bow-tie antenna.

18. The method of claim 11 , wherein the driver stage is switched by a series of edge-sharpening inverting buffers.

19. The method of claim 11 , where the input signal is a periodic signal.

20. The method of claim 11 , where the driver stage further comprises a second transistor and a second transmission line, the second transistor connected between the first transistor and the series of buffers and the second transmission line connected between the second transistor and ground.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 20, 2022
From: BABAKHANI, AYDIN; RAZAVIAN, SEYEDMOHAMMADREZA
To: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Reel/Frame 061487/0450 →
Continuity (2)
Provisional Application 62866954 · Jun 26, 2019
Related Publication 20220247437A1 · Aug 4, 2022
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