Granted Patent B2

US 12,254,921 · App. 18/151,466 · Granted Mar 18, 2025

Inventors: Guifen Yang (Hefei, CN); Sungsoo Chi (Hefei, CN)

Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.

G11C11/4091

Abstract

Claims (33)

1. A sense amplifier circuit architecture, comprising:

a first N-Metal-Oxide-Semiconductor (NMOS) layout, comprising first N-type active layers discretely arranged in a first direction, and first gate layers discretely arranged on the first N-type active layers;

a second NMOS layout, comprising second N-type active layers discretely arranged in the first direction, and second gate layers discretely arranged on the second N-type active layers;

a first P-Metal-Oxide-Semiconductor (PMOS) layout, comprising first P-type active layers discretely arranged in the first direction, and third gate layers discretely arranged on the first P-type active layers;

a second PMOS layout, comprising second P-type active layers discretely arranged in the first direction, and fourth gate layers discretely arranged on the second P-type active layers;

a first processing structure layout, comprising first active layers discretely arranged in the first direction and extending in a second direction, and a first isolation gate arranged on the first active layers and extending in the second direction; and

a second processing structure layout, comprising second active layers discretely arranged in the first direction and extending in the second direction, and a second isolation gate arranged on the second active layers and extending in the second direction,

wherein the first direction intersects the second direction;

the first processing structure layout further comprises a first precharge gate, arranged on the first active layers and extending in the first direction, and the first precharge gate and the first isolation gate are arranged in the second direction in sequence; the second processing structure layout further comprises a second precharge gate and a third precharge gate, which are arranged on the second active layers and extending in the first direction, and the second precharge gate, the second isolation gate and the third precharge gate are arranged in the second direction in sequence;

wherein the first processing structure layout further comprises an equalizing gate, arranged on the first active layers and extending in the first direction, and the first precharge gate, the first isolation gate, and the equalizing gate are arranged in the second direction in sequence; or

the first processing structure layout further comprises a first precharge gate and a third precharge gate, which are arranged on the first active layers and extending in the first direction, and the first precharge gate, and the first isolation gate and the third precharge gate are arranged in the second direction in sequence; the second processing structure layout further comprises a second precharge gate, arranged on the second active layers and extending in the first direction, and the second precharge gate and the second isolation gate are arranged in the second direction in sequence; wherein the first processing structure layout further comprises an equalizing gate, arranged on the first active layers and extending in the first direction, and the first precharge gate, the first isolation gate, the equalizing gate, and the third precharge gate are arranged in the second direction in sequence.

2. The sense amplifier circuit architecture of claim 1 , wherein

in the first direction, the first active layers for electrically connecting a preset voltage are connected to each other.

3. The sense amplifier circuit architecture of claim 1 , wherein

in the first direction, the second active layers for electrically connecting a preset voltage are connected to each other.

4. The sense amplifier circuit architecture of claim 1 , wherein

in the second direction, the first processing structure layout, the first NMOS layout, the first PMOS layout, the second PMOS layout, the second NMOS layout, and the second processing structure layout are arranged in sequence.

5. The sense amplifier circuit architecture of claim 1 , wherein

in the second direction, the first processing structure layout, the first PMOS layout, the first NMOS layout, the second NMOS layout, the second PMOS layout, and the second processing structure layout are arranged in sequence.

6. The sense amplifier circuit architecture of claim 1 , wherein

in the second direction, the first NMOS layout, the first processing structure layout, the first PMOS layout, the second PMOS layout, the second processing structure layout, and the second NMOS layout are arranged in sequence.

7. The sense amplifier circuit architecture of claim 1 , wherein

in the second direction, the first PMOS layout, the first processing structure layout, the first NMOS layout, the second NMOS layout, the second processing structure layout, and the second PMOS layout are arranged in sequence.

8. The sense amplifier circuit architecture of claim 1 , wherein

in the second direction, the first PMOS layout, the first NMOS layout, the first processing structure layout, the second processing structure layout, the second NMOS layout, and the second PMOS layout are arranged in sequence.

9. The sense amplifier circuit architecture of claim 1 , wherein

in the second direction, the first NMOS layout, the first PMOS layout, the first processing structure layout, the second processing structure layout, the second PMOS layout, and the second NMOS layout are arranged in sequence.

10. The sense amplifier circuit architecture of claim 8 , wherein

the first active layers are connected to each other, and the second active layers are connected to each other.

11. The sense amplifier circuit architecture of claim 9 , wherein

the first active layers are connected to each other, and the second active layers are connected to each other.

12. The sense amplifier circuit architecture of claim 1 , wherein

the first direction is perpendicular to the second direction.

Assignments (1)

Priority Claims (1)

Continuity (2)

References Cited (34)