Multi-layer piezoelectric substrate with conductive layer
An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer positioned over a substrate. The acoustic wave device can also include an interdigital transducer electrode positioned over the piezoelectric layer. The acoustic wave device can also include a grounding structure positioned over the piezoelectric layer. The acoustic wave device can also include a conductive layer positioned under the substrate such that the substrate is positioned between the conductive layer and the grounding structure. The acoustic wave device can further include an electrical pathway that electrically connects the conductive layer to the grounding structure.
1. An acoustic wave resonator comprising:
a piezoelectric layer over a substrate, the piezoelectric layer having at least one etched portion along a side;
an interdigital transducer electrode over the piezoelectric layer;
a grounding structure over at least a portion of the interdigital transducer electrode; and
a conductive layer with at least a portion positioned between the interdigital transducer electrode and the substrate, the conductive layer electrically connected to the grounding structure by way of conductive material in the at least one etched portion of the piezoelectric layer.
2. The acoustic wave resonator of claim 1 further comprising the at least one etched portion on one or more back portions of the piezoelectric layer.
3. The acoustic wave resonator of claim 1 wherein the acoustic wave resonator is a surface acoustic wave resonator configured to generate a surface acoustic wave.
4. The acoustic wave resonator of claim 1 further comprising a dispersion adjustment layer between the piezoelectric layer and the conductive layer.
5. The acoustic wave resonator of claim 4 wherein the dispersion adjustment layer includes silicon dioxide.
6. The acoustic wave resonator of claim 4 further comprising a second dispersion adjustment layer disposed over the interdigital transducer electrode.
7. The acoustic wave resonator of claim 1 further comprising a temperature compensation layer disposed over the interdigital transducer electrode.
8. The acoustic wave resonator of claim 1 wherein the grounding structure includes a plurality of grounding structure portions that are spaced apart from each other.
9. The acoustic wave resonator of claim 1 wherein the conductive layer has a thickness of between approximately 10 nanometers and approximately 10 microns.
10. The acoustic wave resonator of claim 1 wherein the grounding structure includes conductive pillars.
11. A method of manufacturing an acoustic wave resonator, the method comprising:
etching at least one etched portion along a side of a piezoelectric layer of an acoustic wave resonator, the piezoelectric layer positioned above a conductive layer and a substrate;
filling the at least one etched portion with conductive material and electrically connecting the conductive material to the conductive layer;
disposing an interdigital transducer electrode above the piezoelectric layer, the conductive layer positioned between the interdigital electrode and the substrate; and
electrically connecting the conductive material to a grounding structure, the grounding structure positioned over the interdigital transducer electrode.
12. The method of claim 11 further comprising disposing a temperature compensation layer over the interdigital transducer electrode.
13. The method of claim 11 wherein etching at least one etched portion of the piezoelectric layer includes etching back portions of the piezoelectric layer.
14. The method of claim 11 wherein the acoustic wave resonator is a surface acoustic wave resonator configured to generate a surface acoustic wave.
15. The method of claim 11 further comprising etching corresponding portions of a dispersion adjustment layer disposed between the piezoelectric layer and the conductive layer and filling the corresponding etched portions of the dispersion adjustment layer with the conductive material.
16. The method of claim 15 wherein the dispersion adjustment layer includes silicon dioxide.
17. The method of claim 15 further comprising disposing a second dispersion adjustment layer over the interdigital transducer electrode.
18. The method of claim 11 wherein the grounding structure includes a plurality of grounding structure portions that are spaced apart from each other.
19. The method of claim 11 wherein the conductive layer has a thickness of between approximately 10 nanometers and approximately 10 microns.
20. The method of claim 11 wherein the grounding structure includes conductive pillars.