Multi-layer piezoelectric substrate with grounding structure
An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer positioned over a substrate. The acoustic wave device can also include an interdigital transducer electrode positioned over the piezoelectric layer. The acoustic wave device can also include a grounding structure positioned over the piezoelectric layer. The acoustic wave device can also include a conductive layer positioned between the piezoelectric layer and the substrate. The acoustic wave device can further include an electrical pathway that electrically connects the conductive layer to the grounding structure.
1. An acoustic wave device comprising:
a piezoelectric layer over a substrate;
an interdigital transducer electrode over the piezoelectric layer;
a grounding structure over the piezoelectric layer; and
a conductive layer positioned vertically between the piezoelectric layer and the substrate, the conductive layer being electrically connected to the grounding structure, the interdigital transducer electrode vertically overlapping at least a portion of the conductive layer.
2. The acoustic wave device of claim 1 wherein a via extending through at least a portion of the piezoelectric layer is included in an electrical path between the conductive layer and the grounding structure.
3. The acoustic wave device of claim 2 wherein the via is a filled via filled with a conductive material.
4. The acoustic wave device of claim 2 wherein the via is a conformal via.
5. The acoustic wave device of claim 1 wherein conductive material extending along a sidewall of the piezoelectric layer is included in an electrical path between the conductive layer and the grounding structure.
6. The acoustic wave device of claim 1 wherein the grounding structure includes a plurality of grounding structure portions that are spaced apart from each other.
7. The acoustic wave device of claim 1 further comprising a temperature compensation layer disposed over the interdigital transducer electrode.
8. The acoustic wave device of claim 1 further comprising a dispersion adjustment layer disposed between the piezoelectric layer and the conductive layer.
9. The acoustic wave device of claim 8 wherein the dispersion adjustment layer includes silicon dioxide.
10. The acoustic wave device of claim 1 wherein the conductive layer includes aluminum.
11. The acoustic wave device of claim 1 wherein the conductive layer has a thickness of between approximately 10 nanometers and approximately 10 microns.
12. The acoustic wave device of claim 1 wherein the grounding structure includes a conductive plate.
13. The acoustic wave device of claim 1 wherein the grounding structure includes conductive pillars.
14. An acoustic wave filter comprising:
an acoustic wave device including a piezoelectric layer vertically over a substrate, an interdigital transducer electrode over the piezoelectric layer, a grounding structure over the piezoelectric layer, and a conductive layer positioned between the piezoelectric layer and the substrate, the conductive layer being electrically connected to the grounding structure, the interdigital transducer electrode overlapping in the vertical direction at least a portion of the conductive layer positioned vertically between the interdigital transducer electrode and the substrate; and
a plurality of other acoustic wave devices, the acoustic wave device and the plurality of other acoustic wave devices together arranged to filter a radio frequency signal.
15. A method of manufacturing an acoustic wave device, the method comprising:
providing an acoustic wave device structure including a substrate, a conductive layer vertically over the substrate, a piezoelectric layer over the conductive layer such that the conductive layer is positioned between the substrate and the piezoelectric layer, and an interdigital transducer electrode over the piezoelectric layer, the interdigital transducer electrode overlapping in the vertical direction at least a portion of the conductive layer;
wherein the conductive layer is positioned vertically between the interdigital transducer electrode and the substrate; and
electrically connecting the conductive layer to a grounding structure over the piezoelectric layer to thereby ground the conductive layer.
16. The method of claim 15 further comprising forming an opening through at least a portion of the piezoelectric layer to expose the conductive layer and providing a conductive material in the opening, the electrically connecting causing the conductive layer to be electrically connected to the grounding structure by way of the conductive material.
17. The method of claim 16 wherein the conductive material in the opening is a filled via.
18. The method of claim 15 further comprising etching a portion of the piezoelectric layer and providing a conductive material in the etched portion of the piezoelectric layer, the electrically connecting causing the conductive layer to be electrically connected to the grounding structure by way of the conductive material.
19. The method of claim 15 further comprising forming a temperature compensation layer over the interdigital transducer electrode.
20. The method of claim 15 wherein the providing includes providing the acoustic wave device structure with a dispersion adjustment layer positioned between the piezoelectric layer and the conductive layer.