IP Library Granted Patent US 12,256,621
Granted Patent B2
US 12,256,621 · App. 17/687,451 · Granted Mar 18, 2025

Display panel and electronic device including the same

Inventors: Tae Gon Kim (Hwaseong-si, KR); Shin Ae Jun (Seongnam-si, KR); Deukseok Chung (Yongin-si, KR); Nayoun Won (Yongin-si, KR); Sung Hun Lee (Hwaseong-si, KR); Byoung Ki Choi (Hwaseong-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H10K59/38C09K11/565C09K11/883H10K59/12H10K71/00B82Y20/00B82Y40/00H10K59/1201
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Quick Facts
Patent No.
US 12,256,621
App. No.
17/687,451
Granted
Mar 18, 2025
Kind
B2
Abstract

A display panel including a light emitting panel; and a color conversion panel with a surface opposite a surface of the light emitting panel. The light emitting panel is configured to emit incident light including a first light and a second light. The color conversion panel includes a color conversion layer including two or more color conversion regions, a color conversion region includes a first region corresponding to the green pixel, the first region includes a matrix and a first composite dispersed within the matrix and including a plurality of luminescent nanostructures, and the spectral overlap between a UV-Vis absorption spectrum of the luminescent nanostructures, the maximum emission peak of the first light, and the maximum emission peak of the second light satisfies the following equation: B/A ≤about 0.6 A and B are as defined.

Claims (46)

1. A display panel, comprising

a light emitting panel; and

a color conversion panel with a surface opposite a surface of the light emitting panel,

wherein the light emitting panel is configured to emit incident light comprising a first light with a maximum emission peak wavelength in a range of greater than or equal to about 450 nm and less than or equal to about 480 nm, and a second light with a maximum emission peak wavelength in a range of greater than or equal to about 500 nm and less than or equal to about 580 nm,

wherein the color conversion panel comprises a color conversion layer comprising a color conversion region, and optionally, a partition wall defining each region of the color conversion layer, the color conversion region comprises a first region corresponding to a green pixel,

the first region comprises a first composite comprising a matrix and a plurality of luminescent nanostructures dispersed within the matrix and comprising, and

the spectral overlap of a UV-Vis absorption spectrum of the luminescent nanostructures, the maximum emission peak of the first light, and the maximum emission peak of the second light satisfies the following equation:

B/A ≤about 0.6

wherein, A corresponds to an area where a UV-Vis absorption spectrum of the luminescent nanostructures overlaps with the maximum emission peak of the first light in a wavelength region of less than or equal to about 500 nm, and B corresponds to an area where the UV-Vis absorption spectrum of the luminescent nanostructures overlaps with the maximum emission peak of the second light in a wavelength region of greater than or equal to about 500 nm, and

wherein for determination of the A, a height of a first absorption peak of the UV-Vis absorption spectrum of the luminescent nanostructures and a height of the maximum emission peak of the first light are adjusted to be equal, and for determination of the B, a height of a first absorption peak of the UV-Vis absorption spectrum of the luminescent nanostructures and a height of the maximum emission peak of the second light are adjusted to be equal.

2. The display panel of claim 1 , wherein the light emitting panel comprises a first electrode and a second electrode, and a light emitting layer disposed between the first electrode and the second electrode.

3. The display panel of claim 2 , wherein the light emitting layer comprises an organic compound and a dopant.

4. The display panel of claim 2 , wherein the light emitting layer comprises a first light emitting layer and a second light emitting layer disposed on the first light emitting layer, wherein the first light emitting layer is configured to emit the first light and the second light emitting layer is configured to emit the second light.

5. The display panel of claim 4 , wherein the light emitting layer further comprises a first charge generation layer disposed between the first light emitting layer and the second light emitting layer, and optionally, a charge auxiliary layer disposed between the first electrode and the first light emitting layer, between the second electrode and the second light emitting layer, or between the first electrode and the first light emitting layer and between the second electrode and the second light emitting layer.

6. The display panel of claim 1 , wherein

the light emitting layer comprises a second light emitting layer disposed between two or more first light emitting layers, a first light emitting layer disposed between two or more second light emitting layers, or a combination thereof, and

wherein the first light emitting layer is configured to emit the first light, and the second light emitting layer configured to emit the second light.

7. The display panel of claim 1 , wherein the incident light does not comprise red light having a wavelength of greater than or equal to about 600 nanometers and less than or equal to about 680 nanometers.

8. The display panel of claim 1 , wherein

the maximum emission peak wavelength of the second light is in a range of greater than or equal to about 515 nanometers and less than or equal to about 530 nanometers, and

the maximum emission peak wavelength of the first light is in a range of greater than about 440 nanometers and less than or equal to about 465 nanometers.

9. The display panel of claim 1 , wherein a maximum photoluminescence peak wavelength of the luminescent nanostructures is in the range of greater than or equal to about 520 nanometers and less than or equal to about 550 nanometers.

10. The display panel of claim 1 , wherein a difference in the wavelength of the first absorption peak, and the wavelength of the maximum photoluminescence peak, of the luminescent nanostructures is greater than or equal to about 45 nanometers and less than or equal to about 65 nanometers.

11. The display panel of claim 1 , wherein in the UV-Vis absorption spectrum of the luminescent nanostructures, an absorbance ratio of absorbance at a wavelength of about 450 nm with respect to absorbance at a wavelength of about 350 nm is greater than 0.078:1.

12. The display panel of claim 1 , wherein the luminescent nanostructures exhibit a UV-Vis absorption spectrum having a positive differential coefficient value at about 450 nm.

13. The display panel of claim 1 , wherein

the luminescent nanostructures comprise a first semiconductor nanocrystal comprising a Group III-V compound and a second semiconductor nanocrystal comprising zinc chalcogenide,

the Group III-V compound comprises indium and phosphorus,

the zinc chalcogenide comprises zinc, selenium, and sulfur, and

the luminescent nanostructures do not contain cadmium.

14. The display panel of claim 13 , wherein

in the plurality of luminescent nanostructures, a mole ratio of sulfur to selenium is greater than about 2:1, or

in the plurality of luminescent nanostructures, a mole ratio of sulfur to indium is greater than or equal to about 7:1 and less than or equal to about 15:1, or

in the plurality of luminescent nanostructures, a mole ratio of selenium to indium is greater than or equal to about 2.5:1 and less than or equal to about 7:1.

15. The display panel of claim 1 , wherein the luminescent nanostructures have an average size of less than or equal to about 6 nanometers when confirmed by electron microscopy analysis.

16. The display panel of claim 1 , wherein in the spectral overlap, the B/A is less than or equal to about 0.5.

17. The display panel of claim 1 , wherein the first composite or the color conversion panel has an incident light absorbance defined by the following equation of greater than or equal to about 89%:

incident light absorbance (%)=[( B−B ′)/ BG ]×100(%)

B: light dose of incident light of having a wavelength of less than or equal to about 500 nm, and

B′: light dose of incident light having a wavelength of less than or equal to about 500 nm that has passed through the first composite.

18. The display panel of claim 1 , wherein the first composite or the color conversion panel has a light conversion rate defined by the following equation of greater than or equal to about 45%:

A/B (%)=light conversion rate

A: light dose of green light having a wavelength of greater than or equal to about 500 nm and being emitted from the first composite, and

B: light dose of incident light having a wavelength of less than or equal to about 500 nm.

19. The display panel of claim 1 , wherein the color conversion region further comprises a second region corresponding to a red pixel, a third region corresponding to a blue pixel, or a combination thereof.

20. An electronic device comprising the display panel of claim 1 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 26, 2025
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 072964/0412 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 15, 2022
From: KIM, TAE GON; JUN, SHIN AE; CHUNG, DEUKSEOK; WON, NAYOUN; LEE, SUNG HUN; CHOI, BYOUNG KI
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 059265/0103 →
Priority Claims (1)
KR 10-2021-0029749 · Mar 5, 2021 · national
Continuity (1)
Related Publication 20220285446A1 · Sep 8, 2022
References Cited (20)
US 10240087B2 · Vick et al. · 2019 [cited by applicant]
US 10381527B2 · Vick et al. · 2019 [cited by applicant]
US 10401550B2 · Kim et al. · 2019 [cited by applicant]
US 10833228B2 · Vick et al. · 2020 [cited by applicant]
US 12078827B2 · Park · 2024 [cited by examiner]
US 20180239245A1 · Yang · 2018 [cited by examiner]
US 20190072815A1 · Chung · 2019 [cited by examiner]
US 20190112523A1 · Kim · 2019 [cited by examiner]
US 20190211260A1 · Won · 2019 [cited by examiner]
US 20200251040A1 · Lee et al. · 2020 [cited by applicant]
US 20200399536A1 · Kim · 2020 [cited by examiner]
US 20220285445A1 · Kim · 2022 [cited by examiner]
KR 20070008071A · 2007 [cited by applicant]
KR 20160053974A · 2016 [cited by applicant]
KR 20160094891A · 2016 [cited by applicant]
KR 20170096583A · 2017 [cited by applicant]
KR 20190000759A · 2019 [cited by applicant]
WO 10023603A2 · 2010 [cited by applicant]
Kuo, Tsung-Rong, et al., Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes, Nanoscale. Res. Lett., vol. 12, No. 537, 7 pages, 2017. [cited by applicant]
Yuanyuan Li, et al., A Novel QD-OLED Structure of High Optical Efficiency, ICDT 2019., vol. 50, Issue. S1, Session. 10, 3pp. [cited by applicant]