Tunability of dopant concentration in thin hafnium oxide films
Methods of depositing thin films of hafnium oxide possessing strong ferroelectric properties are described. A hafnium oxide monolayer is formed in a first process cycle comprising sequential exposure of a substrate to a hafnium precursor, purge gas, first oxidant and purge gas. A doped hafnium oxide monolayer is formed in a second process cycle comprising sequential exposure of the substrate to a hafnium precursor, purge gas, dopant precursor, purge gas, second oxidant and purge gas. Thin films of hafnium oxide are also described.
1. A method of depositing a film, the method comprising:
a first deposition cycle comprising:
exposing a substrate in a processing chamber to a hafnium precursor to deposit a hafnium-containing monolayer,
purging the processing chamber of the hafnium precursor,
exposing the substrate to a first oxidant to react with the hafnium-containing monolayer to form a hafnium oxide monolayer,
purging the processing chamber of the first oxidant;
a second deposition cycle comprising:
exposing the substrate in a processing chamber to a hafnium precursor to deposit a second hafnium-containing monolayer on the hafnium oxide monolayer,
purging the processing chamber of the hafnium precursor;
exposing the substrate to a dopant precursor to deposit a dopant-containing layer on the substrate with the second hafnium-containing monolayer, the dopant-containing layer having a dopant concentration less than 100% dopant,
purging the processing chamber of the dopant precursor,
exposing the substrate to a second oxidant to react with the second hafnium-containing monolayer and the dopant-containing layer to form a doped hafnium oxide film on the substrate, and
purging the processing chamber of the second oxidant; and
repeating one or more of the first deposition cycle or the second deposition cycle so that the doped hafnium oxide film has a thickness in a range of from 0.5 nm to 10 nm, has less than or equal to 150 total monolayers, wherein the dopant concentration is changed in each monolayer and is adjustable in increments of 1.5 mol % so that the doped hafnium oxide film has a dopant concentration in a range of about 1.5 mol % to about 9 mol %.
2. The method of claim 1 , wherein the dopant is selected from one or more of aluminum (Al), silicon (Si), zirconium (Zr), yttrium (Y), lanthanum (La), gadolinium (Gd), or strontium (Sr).
3. The method of claim 1 , wherein the hafnium precursor is selected from one or more of tetrakis(ethylmethylamido) hafnium (IV) (TEMAHf), tetrakis (dimethylamido)hafnium (IV) (TDMAHf), tetrakis(diethylamido)hafnium(IV) (TDEAHf), hafnium tetrachloride (HfCl 4 ), hafnium isopropoxide isopropanol adduct, hafnium (IV) tert-butoxide, dimethylbis(cyclopentadienyl)hafnium (IV), bis(trimethylsily)amidohafnium (IV)chloride, bis(methyl-η 5 -cyclopentadienyl) methoxymethylhafnium, or bis(methyl-η 5 -cyclopentadienyl)dimethylhafnium.
4. The method of claim 1 , wherein the dopant precursor is selected from one or more of trimethylaluminum (TMA), triethylaluminum(TEA), aluminum chloride (AlCl 3 ), silicon tetrachloride (SiCl 4 ), hexachlorodisilane (Si 2 Cl 6 ), bis(diethylamino)silane, tris(dimethylamino)silane, tris(isopropylcyclopentadienyl)lanthanum, tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum (III) (La(thd) 3 ), tris(cyclopentayldienyl)lanthanum(III) (LaCp 3 ), tris(isopropylcyclopentadienyl)lanthanum(III) (La(CpiPr) 3 ), tetrakis(ethylmethylamido)zirconium(IV) (TEMAZr), tetrakis(dimethylamido) zirconium(IV) (TDMAZr), tetrakis(2,2,6,6,-tetramethyl-3,5-heptanedionate)zirconium, zirconium(IV) 2-ethylhexanoate, zirconium(IV) dibutoxide(bis-2,4-pentanedionate), tetrakis(diethylamido)zirconium(IV) (TDEAZr), dimethyl-bis(pentamethylcyclopentadienyl)zirconium(IV), bis(methyl-η5-cyclopentadienyl) methoxymethylzirconium, bis(cyclopentadienyl)zirconium(IV) dihydride, zirconium tetrachloride (ZrCl 4 ), tris(cyclopentyldienyl)yttrium(III) (YCp 3 ), tris(methylcyclopentadienyl)yttrium(III) ((MeCp) 3 Y), tris(ethylcyclopentadienyl)yttrium(III) ((EtCp) 3 Y), tris(2,2,6,6-tetramethyl-3,5-heptanedionato)yttrium (III) (Y(thd) 3 ), tris(2,2,6,6-tetramethyl-3,5-heptanedionato)gadolinium(III) (Gd(thd) 3 ), tris(methylcyclopentadienyl) gadolinium (III) ((MeCp) 3 Gd), tris(ethylcyclopentadienyl)gadolinium(III) ((EtCp) 3 Gd), bis(triisopropylcyclopentadienyl)strontium(II) ((i-Pr 3 Cp) 2 Sr), bis(trimethyl-n-propylcyclopentadienyl)strontium(II) ((n-PrMe 3 Cp) 2 Sr), or bis(methylcyclopentadienyl) strontium(II) (Sr(thd) 2 ).
5. The method of claim 1 , wherein the first oxidant and the second oxidant are independently selected from H 2 O, molecular oxygen (O 2 ), ozone (O 3 ), direct O 2 plasma, or remote O 2 plasma.
6. The method of claim 1 , wherein purging the processing chamber comprises flowing a purge gas over the substrate.
7. The method of claim 6 , wherein the purge gas is selected from one or more of Ar, N 2 , or He.
8. The method of claim 1 , wherein the substrate comprises one or more of silicon, SiO 2 , Ge, SiGe, MoS 2 , MoSe 2 , WS 2 , WSe 2 , TiN, TaN, Pt, Ir, or W.
9. A method of depositing a thin film, the method comprising:
forming a hafnium oxide monolayer in a first process cycle comprising sequential exposure of a substrate to a hafnium precursor, purge gas, first oxidant and purge gas;
forming a doped hafnium oxide monolayer on the hafnium oxide monolayer in a second process cycle comprising sequential exposure of the substrate to the hafnium precursor, purge gas, dopant precursor comprising aluminum (Al), purge gas, second oxidant and purge gas, the doped hafnium oxide monolayer having a dopant concentration less than 100% aluminum (Al); and
repeating one or more of the first process cycle or the second process cycle to form an aluminum-doped hafnium oxide film, the aluminum-doped hafnium oxide film having a thickness in a range of from about 0.5 nm to about 10 nm, having less than or equal to 150 total monolayers, wherein the dopant concentration is changed in each monolayer and is adjustable in increments of 1.5 mol % so that the aluminum-doped hafnium oxide film has a dopant concentration in a range of about 1.5 mol % to about 9 mol %.
10. The method of claim 9 , wherein the hafnium precursor is selected from one or more of tetrakis(ethylmethylamido)hafnium(IV), (TEMAHf), tetrakis(dimethylamido)hafnium(IV) (TDMAHf), tetrakis(diethylamido)hafnium(IV) (TDEAHf), hafnium isopropoxide isopropanol adduct, hafnium (IV) tert-butoxide, dimethylbis(cyclopentadienyl)hafnium (IV), bis(trimethylsily)amidohafnium (IV) chloride, bis(methyl-η 5 -cyclopentadienyl)methoxymethylhafnium, bis(methyl-η 5 -cyclopentadienyl)dimethylhafnium.
11. The method of claim 9 , wherein the dopant precursor is selected from one or more of trimethylaluminum (TMA), triethylaluminum (TEA), and aluminum chloride (AlCl 3 ).
12. The method of claim 9 , wherein the first oxidant and the second oxidant are selected from H 2 O, molecular oxygen (O 2 ), ozone (O 3 ), direct O 2 plasma, or remote O 2 plasma.
13. The method of claim 9 , wherein the purge gas is selected from one or more of Ar, N 2 , or He.
14. The method of claim 9 , wherein the aluminum-doped hafnium oxide film has a thickness in a range of from 0.5 nm to 2 nm and has less than or equal to 30 total monolayers.
15. The method of claim 1 , wherein the doped hafnium oxide film has a thickness in a range of from 0.5 nm to 2 nm and has less than or equal to 30 total monolayers.
16. The method of claim 10 , wherein the hafnium precursor comprises tetrakis(ethylmethylamido)hafnium(IV) (TEMAHf).
17. The method of claim 11 , wherein the dopant precursor is selected from one or more of triethylaluminum (TEA) and aluminum chloride (AlCl 3 ).