Semiconductor device structure having gate dielectric layer
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base portion and a fin portion over the base portion. The semiconductor device structure includes an isolation layer over the base portion and surrounding the fin portion. The semiconductor device structure includes a metal gate stack over the isolation layer and wrapping around an upper part of the fin portion. The metal gate stack includes a gate dielectric layer and a metal gate electrode layer over the gate dielectric layer, and the gate dielectric layer includes fluorine. A first part of the isolation layer is not covered by the metal gate stack, the first part includes fluorine, and a first concentration of fluorine in the first part increases toward a first top surface of the first part.
1. A semiconductor device structure, comprising:
a substrate having a base portion and a fin portion over the base portion;
an isolation layer over the base portion and surrounding the fin portion; and
a metal gate stack over the isolation layer and wrapping around an upper part of the fin portion, wherein the metal gate stack comprises a gate dielectric layer and a metal gate electrode layer over the gate dielectric layer, the gate dielectric layer comprises fluorine,
a first part of the isolation layer is not covered by the metal gate stack, the first part comprises fluorine, and a first concentration of fluorine in the first part increases toward a first top surface of the first part.
2. The semiconductor device structure as claimed in claim 1 , further comprising:
a spacer layer over sidewalls of the metal gate stack, wherein the first part of the isolation layer is not covered by the spacer layer.
3. The semiconductor device structure as claimed in claim 1 , further comprising:
an insulating layer over the isolation layer and the fin portion, wherein the metal gate stack is embedded in the insulating layer, and the insulating layer covers the first part of the isolation layer.
4. The semiconductor device structure as claimed in claim 3 , wherein the insulating layer is in direct contact with the first part of the isolation layer.
5. The semiconductor device structure as claimed in claim 1 , further comprising:
a stressor over the fin portion and a side of the metal gate stack, wherein the stressor is partially embedded in the first part of the isolation layer.
6. The semiconductor device structure as claimed in claim 5 , further comprising:
an insulating layer over the stressor and the first part of the isolation layer, wherein the metal gate stack is embedded in the insulating layer, and the insulating layer is partially between the stressor and the first part of the isolation layer.
7. The semiconductor device structure as claimed in claim 1 , wherein the metal gate stack further comprises a work function metal layer, the work function metal layer is partially between the gate dielectric layer and the metal gate electrode layer and wraps around the metal gate electrode layer, and a first sidewall of the gate dielectric layer is substantially coplanar with a second sidewall of the work function metal layer.
8. The semiconductor device structure as claimed in claim 7 , further comprising:
a spacer layer over and in direct contact with the first sidewall of the gate dielectric layer and the second sidewall of the work function metal layer.
9. The semiconductor device structure as claimed in claim 1 , further comprising:
a semiconductor oxynitride layer between the fin portion and the gate dielectric layer, wherein the semiconductor oxynitride layer comprises fluorine.
10. The semiconductor device structure as claimed in claim 1 , wherein the upper part of the fin portion comprises fluorine, and a second concentration of fluorine in the upper part increases toward the metal gate stack.
11. A semiconductor device structure, comprising:
a substrate having a base portion and a fin portion over the base portion;
an isolation layer over the base portion and surrounding the fin portion; and
a metal gate stack over the isolation layer and wrapping around an upper part of the fin portion, wherein the metal gate stack comprises a gate dielectric layer and a metal gate electrode layer over the gate dielectric layer, and a first fluorine concentration of the gate dielectric layer is greater than a second fluorine concentration of the metal gate electrode layer.
12. The semiconductor device structure as claimed in claim 11 , wherein the first fluorine concentration of the gate dielectric layer is greater than a third fluorine concentration of the isolation layer under the gate dielectric layer.
13. The semiconductor device structure as claimed in claim 11 , wherein the first fluorine concentration of the gate dielectric layer is greater than a third fluorine concentration of the upper part of the fin portion.
14. The semiconductor device structure as claimed in claim 11 , wherein the gate dielectric layer continuously and conformally covers the fin portion and the isolation layer, the metal gate stack further comprises a work function metal layer, the work function metal layer is partially between the gate dielectric layer and the metal gate electrode layer, and a first sidewall of the gate dielectric layer is substantially coplanar with a second sidewall of the work function metal layer.
15. The semiconductor device structure as claimed in claim 14 , further comprising:
a spacer layer over and in direct contact with the first sidewall of the gate dielectric layer and the second sidewall of the work function metal layer.
16. The semiconductor device structure as claimed in claim 11 , wherein an upper portion of the isolation layer comprises fluorine, and a concentration of fluorine in the upper portion of the isolation layer increases toward a top surface of the isolation layer.
17. A semiconductor device structure, comprising:
a base portion;
a fin portion over the base portion;
an isolation layer over the base portion and surrounding a lower part of the fin portion; and
a metal gate stack over the isolation layer and covering an upper part of the fin portion, wherein the metal gate stack comprises a gate dielectric layer and a metal gate electrode layer over the gate dielectric layer, the gate dielectric layer comprises fluorine, the upper part of the fin portion comprises fluorine, and a first concentration of fluorine in the upper part increases toward the metal gate stack.
18. The semiconductor device structure as claimed in claim 17 , wherein an upper portion of the isolation layer comprises fluorine, and a second concentration of fluorine in the upper portion increases toward a top surface of the isolation layer.
19. The semiconductor device structure as claimed in claim 17 , further comprising:
a semiconductor oxynitride layer between the fin portion and the gate dielectric layer, wherein the semiconductor oxynitride layer comprises fluorine.
20. The semiconductor device structure as claimed in claim 17 , wherein the gate dielectric layer has a greater concentration of fluorine than that of the metal gate electrode layer.