Display device having an insulating layer contacting a semiconductor layer through a contact hole
An embodiment of a display device includes a substrate, a semiconductor layer, a first gate insulating layer, a gate electrode, a second gate insulating layer, a first storage electrode, a first interlayer insulating layer, a second interlayer insulating layer, a data line, and a driving voltage line. The semiconductor layer is disposed on the substrate. The first gate insulating layer is disposed on the semiconductor layer. The gate electrode is positioned on the first insulating layer. The second gate insulating layer is disposed on the gate electrode. The first storage electrode is positioned on the second gate insulating layer. The first interlayer insulating layer is disposed on the first storage electrode and has an opening surrounding the semiconductor layer, the gate electrode, and the first storage electrode. The second interlayer insulating layer is disposed on the first interlayer insulating layer and fills the opening. The data line and the driving voltage line are positioned on the second interlayer insulating layer. The semiconductor layer, the gate electrode, and the storage electrode are included in a pixel region. The display device includes a plurality of pixel regions. The data line and the driving voltage line cross the pixel circuit region. A portion of the semiconductor layer is in contact with the second interlayer insulating that fills the opening.
1. A display device comprising:
a substrate;
a polycrystalline semiconductor layer disposed on the substrate including a first electrode, a channel, and a second electrode of a driving transistor;
a first gate insulating layer disposed on the polycrystalline semiconductor layer;
a gate electrode of the driving transistor positioned on the first gate insulating layer;
a second gate insulating layer disposed on the gate electrode;
a first storage electrode positioned on the second gate insulating layer;
a first interlayer insulating layer disposed on the first storage electrode;
an oxide semiconductor layer disposed on the first interlayer insulating layer;
a second interlayer insulating layer disposed on the oxide semiconductor layer to include an opening surrounding the polycrystalline semiconductor layer and the oxide semiconductor layer;
a third interlayer insulating layer configured to fill the opening of the second interlayer insulating layer; and
a data line and a driving voltage line positioned on the third interlayer insulating layer,
wherein a portion of the polycrystalline semiconductor layer is in contact with the third interlayer insulating layer filling the opening.
2. The display device of claim 1 , wherein
the display device includes a plurality of pixel circuit regions,
each of the pixel circuit regions includes at least two polycrystalline semiconductor layers adjacent in a first direction, and
the pixel circuit regions are defined by the opening.
3. The display device of claim 1 , wherein
a cross-section width of the opening decreases toward the substrate.
4. The display device of claim 1 , further comprising
a buffer layer positioned between the substrate and the semiconductor layer,
wherein the opening extends through the second interlayer insulating layer, the first interlayer insulating layer, the second gate insulating layer, the first gate insulating layer, and the buffer layer.
5. The display device of claim 4 , further comprising
a barrier layer positioned between the substrate and the buffer layer,
wherein the opening extends to the barrier layer.
6. The display device of claim 5 , wherein
the opening extends through the barrier layer.
7. The display device of claim 2 , wherein
the polycrystalline semiconductor layers are spaced apart from each other by the opening in adjacent pixel circuit regions, and
the polycrystalline semiconductor layer disposed in one pixel circuit region extends to an edge of the opening.
8. The display device of claim 2 , further comprising:
a plurality of transistors positioned on the substrate; and
a first lower scan line, a second lower scan line, and a lower emission control line connected to at least one of the transistors,
wherein the transistors, the first lower scan line, the second lower scan line, and the lower emission control are positioned within the pixel circuit regions,
first lower scan lines positioned in different pixel circuit regions are positioned to be spaced apart from each other,
second lower scan lines positioned in different pixel circuit regions are positioned to be spaced apart from each other, and
lower emission control lines positioned in different pixel circuit regions are positioned to be spaced apart from each other,
wherein the display device further includes an first upper scan line, an upper second scan line, and an upper emission control line positioned on the third interlayer insulating layer,
the first upper scan line is connected to the first lower scan lines positioned within the different pixel circuit regions,
the upper second scan line is connected to the second lower scan lines positioned within the different pixel circuit regions, and
the upper emission control line is connected to the lower emission control lines positioned in the different pixel circuit regions.