Granted Patent B2

US 12,268,003 · App. 18/370,543 · Granted Apr 1, 2025

Inventors: Kohji Kanamori (Suwon-si, KR); Shinhwan Kang (Suwon-si, KR)

Assignee: SAMSUNG ELECTRONICS CO., LTD.

H10B43/27H01L21/02532H01L21/02592H01L21/02636H01L21/02667H01L21/31111H01L21/31116H01L21/31144H01L23/5226H01L23/528H01L29/40117H10B43/10H10B43/40H10B43/50

Abstract

Claims (43)

1. A vertical memory device, comprising:

a substrate;

gate electrodes spaced apart from each other on the substrate in a first direction substantially perpendicular to an upper surface of the substrate, the gate electrodes being stacked to have a staircase shape in a staircase region, and each of the gate electrodes extending in a second direction substantially parallel to the upper surface of the substrate;

a channel disposed in a memory region and extending through the gate electrodes in the first direction; and

first contact plugs disposed in the staircase region to be spaced apart from the channel in the second direction;

wherein the gate electrodes include a plurality of first gate electrodes and a plurality of second gate electrodes between the plurality of first gate electrodes and the substrate, respectively,

wherein each of the first contact plugs extends through a pad of a corresponding one of the gate electrodes and is electrically connected to the corresponding one of the gate electrodes,

wherein a number of a first set of gate electrodes of the plurality of second gate electrodes through which a first one of the first contact plugs extends is equal to or more than a number of a second set of gate electrodes of the plurality of second gate electrodes through which a second one of the first contact plugs extends,

wherein the first one of the first contact plugs extends through a pad of one gate electrode of the first set of gate electrodes to be electrically connected to the one gate electrode of the first set of gate electrodes,

wherein the second one of the first contact plugs extends through a pad of one gate electrode of the second set of gate electrodes to be electrically connected to the one gate electrode of the second set of the electrodes, and

wherein the one gate electrode of the second set of gate electrodes is between the substrate and the one gate electrode of the first set of gate electrodes.

2. The vertical memory device as claimed in claim 1 , wherein the first one of the first contact plugs extending through the pad of the one gate electrode of the first set of gate electrodes has a bottom surface farther from the substrate in the first direction than a bottom surface of the second one of the first contact plugs extending through the pad of the one gate electrode of the second set of gate electrodes.

3. The vertical memory device as claimed in claim 1 , further comprising:

a spacer between each of the first contact plugs and a sidewall of at least one gate electrode of the gate electrodes,

wherein the spacer electrically insulates each of the first contact plugs from the at least one gate electrode of the gate electrodes.

4. The vertical memory device as claimed in claim 3 , further comprising a burying pattern contacting bottom surfaces of each of the first contact plugs and the spacer, the burying pattern including an insulating material.

5. A vertical memory device, comprising:

a substrate;

transistors on the substrate;

a lower circuit pattern on the substrate, the lower circuit pattern being electrically connected to the transistors;

a common source plate (CSP) on the lower circuit pattern;

a channel connection pattern and a support layer sequentially stacked on the CSP;

gate electrodes spaced apart from each other on the support layer in a vertical direction substantially perpendicular to an upper surface of the substrate, the gate electrodes being stacked to have a staircase shape in a staircase region;

channels electrically connected with each other by the channel connection pattern, each of the channels extending through the gate electrodes, the support layer, and the channel connection pattern in the vertical direction on the CSP;

a first contact plug disposed in the staircase region and extending through a pad of a first gate electrode among the gate electrodes to contact an upper surface of the first gate electrode, the first contact plug extending through at least a portion of a second gate electrode among the gate electrodes, and the second gate electrode being adjacent to the first gate electrode such that the second gate electrode is a next closest gate electrode under the first gate electrode in the vertical direction;

a spacer between the first contact plug and sidewalls of the first gate electrode and the second gate electrode facing the first contact plug, the spacer electrically insulating the first contact plug from the second gate electrode;

a burying pattern contacting bottom surfaces of the first contact plug and the spacer and including an insulating material;

a dummy channel spaced apart from the first contact plug on the pad of the first gate electrode, the dummy channel extending through ones of the gate electrodes under the first gate electrode, the support layer, and the channel connection pattern to contact the CSP;

a second contact plug extending in the vertical direction on the CSP, the second contact plug being electrically connected to the CSP; and

a through via extending in the vertical direction on the lower circuit pattern, the through via being electrically connected to the lower circuit pattern.

6. A vertical memory device, comprising:

a substrate;

a plurality of gate electrodes spaced apart from each other in a first direction substantially perpendicular to an upper surface of the substrate and stacked to have a staircase shape in a staircase region on the substrate, each of the plurality of gate electrodes extending in a second direction substantially parallel to the upper surface of the substrate; and

contact plugs disposed in the staircase region, each of the contact plugs extending lengthwise in the first direction through a pad of a corresponding one of the plurality of gate electrodes, and being electrically connected to the corresponding one of the plurality of gate electrodes,

wherein the plurality of gate electrodes includes a first group of gate electrodes on the substrate and a second group of gate electrodes between the first group of gate electrodes and the substrate,

wherein a number of gate electrodes of the first group of gate electrodes through which a first one of the contact plugs extends is equal to or more than a number of gate electrodes of the second group of gate electrodes through which a second one of the contact plugs extends,

wherein the first one of the contact plugs extends through a pad of one gate electrode of the first group of gate electrodes to be electrically connected to the one gate electrode of the first group of gate electrodes,

wherein the second one of the contact plugs extends through a pad of one gate electrode of the second group of gate electrodes to be electrically connected to the one gate electrode of the second group of gate electrodes, and

wherein the one gate electrode of the second group of gate electrodes is between the one gate electrode of the first group of gate electrodes and the substrate.

7. The vertical memory device as claimed in claim 6 , further comprising:

a channel extending through the gate electrodes in the first direction; and

a bit line on the gate electrodes and extending in a third direction perpendicular to the second direction and substantially parallel to the upper surface of the substrate,

wherein the bit line is electrically connected to the channel.

Priority Claims (1)

Continuity (3)

References Cited (28)