Back cover and processing method thereof, and electronic device
A back cover and a processing method thereof, and an electronic device are disclosed, which relate to the field of electronic product technologies, so as to resolve a problem that air bubbles may be easily generated between a cover plate and an electrochromic film layer when the electrochromic film layer is laminated to the cover plate. The electronic device includes a back cover, and the back cover includes: a transparent cover plate, the electrochromic film layer, and a shielding part. The electrochromic film layer and the transparent cover plate are laminated. The shielding part is disposed between an edge part of the electrochromic film layer and the transparent cover plate, and a thickness of the shielding part is less than 4 microns.
1. An electronic device comprising a back cover, wherein the back cover comprises:
a transparent cover plate;
an electrochromic film layer, wherein the electrochromic film layer and the transparent cover plate are laminated; and
a shielding part, wherein the shielding part is disposed between an edge part of the electrochromic film layer and the transparent cover plate, and a thickness of the shielding part is less than 4 microns;
wherein the shielding part comprises a light shielding layer, and the light shielding layer comprises an indium layer and an indium alloy layer, wherein a thickness of the indium layer ranges from 10 nm to 50 nm, and wherein a thickness of the indium alloy layer ranges from 10 nm to 50 nm;
wherein the shielding part is disposed on a surface that is of the transparent cover plate and that faces the electrochromic film layer, wherein the shielding part further comprises an underlayer, and the underlayer is disposed between the light shielding layer and the transparent cover plate, wherein the underlayer is a silicon-containing underlayer or a zirconia-containing underlayer; and
wherein the light shielding layer further comprises an interleaved layer and the interleaved layer is one of:
a first interleaved layer comprising a silicon dioxide layer and a titanium dioxide layer that are successively and alternately laminated, or
a second interleaved layer comprising a silicon dioxide layer and a niobium oxide layer that are successively and alternately laminated, or
a third interleaved layer comprising a silicon dioxide layer and a tantalum oxide layer that are successively and alternately laminated.
2. The electronic device according to claim 1 , wherein the thickness of the shielding part is less than or equal to 1 micron.
3. The electronic device according to claim 1 , wherein the thickness of the shielding part is greater than or equal to 0.01 micron.
4. The electronic device according to claim 1 , wherein light transmittance of the shielding part ranges from 0 to 50%.
5. The electronic device according to claim 1 , wherein the shielding part is a non-conductive member.
6. The electronic device according to claim 1 , wherein resistance of the shielding part is greater than or equal to 5 megohms.
7. The electronic device according to claim 1 , wherein a thickness of the silicon-containing underlayer ranges from 1 nm to 7 nm, and a thickness of the zirconia-containing underlayer ranges from 5 nm to 30 nm.
8. The electronic device according to claim 1 , wherein the shielding part further comprises a protective layer, and the protective layer is disposed on a side that is of the light shielding layer and that is away from the transparent cover plate.
9. The electronic device according to claim 8 , wherein the protective layer is a niobium oxide layer or a titanium oxide layer.
10. The electronic device according to claim 8 , wherein a thickness of the protective layer ranges from 10 nm to 35 nm.
11. The electronic device according to claim 1 , wherein the electronic device further comprises a decoration layer, and the decoration layer is disposed on a side that is of the electrochromic film layer and that is away from the transparent cover plate.
12. The electronic device according to claim 1 , wherein the light shielding layer comprises the first interleaved layer, and wherein a thickness of the first interleaved layer ranges from 200 nm to 1000 nm.
13. The electronic device according to claim 1 , wherein the light shielding layer comprises the second interleaved layer, and wherein a thickness of the second interleaved layer ranges from 200 nm to 1000 nm.
14. The electronic device according to claim 1 , wherein the light shielding layer comprises the third interleaved layer, and wherein a thickness of the third interleaved layer ranges from 200 nm to 1000 nm.
15. A method for processing a back cover, wherein the back cover comprises a transparent cover plate and an electrochromic film layer, the electrochromic film layer and the transparent cover plate are laminated, and the method comprises:
forming a shielding part between the transparent cover plate and an edge part of the electrochromic film layer, by using a vacuum coating process or a water electroplating process, wherein a thickness of the shielding part is less than 4 microns;
wherein the shielding part comprises a light shielding layer, and the light shielding layer comprises one or more of: an indium layer and an indium alloy layer, wherein a thickness of the indium layer ranges from 10 nm to 50 nm, and wherein a thickness of the indium alloy layer ranges from 10 nm to 50 nm;
wherein the shielding part is disposed on a surface that is of the transparent cover plate and that faces the electrochromic film layer, wherein the shielding part further comprises an underlayer, and the underlayer is disposed between the light shielding layer and the transparent cover plate, wherein the underlayer is a silicon-containing underlayer or a zirconia-containing underlayer; and
wherein the light shielding layer further comprises an interleaved layer and the interleaved layer is one of:
a first interleaved layer comprising a silicon dioxide layer and a titanium dioxide layer that are successively and alternately laminated, or
a second interleaved layer comprising a silicon dioxide layer and a niobium oxide layer that are successively and alternately laminated, or
a third interleaved layer comprising a silicon dioxide layer and a tantalum oxide layer that are successively and alternately laminated.
16. The method according to claim 15 , wherein a region that is on the transparent cover plate and that is opposite to the edge part is a first region, and wherein the forming the shielding part between the transparent cover plate and the edge part comprises:
forming a shielding part on a surface that is of the first region and that faces the edge part; and
positioning the shielding part between the first region and the edge part.
17. The method according to claim 16 , wherein the electrochromic film layer further comprises a middle portion surrounded by the edge part, a region that is on the transparent cover plate and that is opposite to the middle portion is a second region, and before the forming the shielding part on the surface that is of the first region and that faces the edge part, the method further comprises:
forming a removable film layer on a surface that is of the second region and that faces the middle portion;
wherein after the forming the shielding part on the surface that is of the first region and that faces the edge part, the method further comprises:
removing the removable film layer.