Semiconductor package and method of manufacturing the semiconductor package
A semiconductor package includes: a first semiconductor device including a first pad and a first metal bump structure on the first pad; and a second semiconductor device on the first semiconductor device, and including a third pad and a second metal bump structure on the third pad, wherein the first and second metal bump structures are bonded to each other to electrically connect the first and second semiconductor devices to each other. Each of the first and second metal bumps structures includes first to third metal patterns. The first to third metal patterns of the first metal bump structure are on the first pad. The first to third metal patterns of the second metal bump structure are on the third pad. The first and third metal patterns include a first metal having a first coefficient of thermal expansion less than that of a second metal of the second metal pattern.
1. A semiconductor package, comprising:
a first semiconductor device including a first pad and a first metal bump structure provided on the first pad; and
a second semiconductor device stacked on the first semiconductor device, and including a third pad and a second metal bump structure provided on the third pad,
wherein the first metal bump structure and the second metal bump structure are bonded to each other to form a conductive connector that electrically connects the first and second semiconductor devices to each other,
wherein the first metal bump structure includes first, second and third metal patterns, wherein the second metal bump structure includes fourth, fifth and sixth metal patterns, wherein the first, second and third metal patterns of the first metal bump structure are stacked on the first pad, wherein the fourth, fifth and sixth metal patterns of the second metal bump structure are stacked on the third pad,
wherein each of the first metal pattern, the third metal pattern, the fourth metal pattern, and the sixth metal pattern include a first metal having a first coefficient of thermal expansion, and each of the second metal pattern and the fifth metal pattern includes a second metal having a second coefficient of thermal expansion greater than the first coefficient of thermal expansion,
wherein the second metal pattern has an annular shape covering a peripheral region of the first metal pattern, and the third metal pattern is provided on the first metal pattern to cover the second metal pattern, and
wherein the fifth metal pattern has an annular shape covering a peripheral region of the fourth metal pattern, and the sixth metal pattern is provided on the fourth metal pattern to cover the fifth metal pattern.
2. The semiconductor package of claim 1 , wherein the first metal includes copper (Cu).
3. The semiconductor package of claim 2 , wherein the second metal includes at least one of zinc (Zn), aluminum (Al) or silver (Ag).
4. The semiconductor package of claim 1 , wherein diameters of the first and second metal bump structures, respectively, are within a range of about 2 μm to about 15 μm.
5. The semiconductor package of claim 1 , wherein the first metal pattern and the fourth meatal pattern have a first thickness, wherein the second metal pattern and the fifth metal pattern have a second thickness smaller than the first thickness, and wherein the third metal pattern and the sixth metal pattern have a third thickness smaller than the first thickness.
6. The semiconductor package of claim 5 , wherein the first thickness is within a range of about 70% to about 85% of the whole thickness of each of the first and second metal bump structures, wherein the second thickness is within a range of about 10% to about 20% of the whole thickness of each of the first and second metal bump structures.
7. The semiconductor package of claim 1 , wherein a first width of a first junction surface, which is formed between the first metal pattern and the second metal pattern, is less than a second width of a second junction surface, which is formed between the first metal pattern and the third metal pattern.
8. The semiconductor package of claim 7 , wherein a third width of a third junction surface, which is formed between the fourth metal pattern and the fifth metal pattern, is less than a fourth width of a fourth junction surface, which is formed between the fourth metal pattern and the sixth metal pattern.
9. The semiconductor package of claim 8 , wherein a fifth width of a fifth junction surface, which is formed between the third metal pattern and the sixth metal pattern, is greater than the second width and the fourth width.
10. The semiconductor package of claim 1 , wherein an outer surface of the second metal pattern is exposed from the third metal pattern, wherein an outer surface of the fifth metal pattern is exposed from the sixth metal pattern.
11. A semiconductor package, comprising:
a first semiconductor device including a first pad and a first metal bump structure provided on the first pad; and
a second semiconductor device stacked on the first semiconductor device, and including a third pad and a second metal bump structure provided on the third pad,
wherein the first metal bump structure includes:
a first main pattern including copper (Cu), wherein the first main pattern of the first metal bump structure is provided on the first pad; and
a first sub pattern provided inside the first main pattern adjacent to a first junction surface and including a second metal having a coefficient of thermal expansion greater than that of copper (Cu),
wherein the second metal bump structure includes:
a second main pattern including copper (Cu), wherein the second main pattern of the second metal bump structure is provided on the third pad; and
a second sub pattern provided inside the second main pattern adjacent to the first junction surface and including the second metal having the coefficient of thermal expansion greater than that of copper (Cu),
wherein the first junction surface is formed by the bonding between a first surface of the first main pattern of the first metal bump structure and a first surface of the second main pattern of the second metal bump structure,
wherein the first main pattern has a cuboid shape or a cylindrical shape, the first sub pattern has an annular shape, and an outer surface of the first sub pattern is exposed from the first main pattern, and
wherein the second main pattern has a cuboid shape or a cylindrical shape, the second sub pattern has an annular shape, and an outer surface of the second sub pattern is exposed from the second main pattern.
12. The semiconductor package of claim 11 , wherein the second metal includes at least one of zinc (Zn), aluminum (Al) or silver (Ag).
13. The semiconductor package of claim 11 , wherein diameters of the first and second metal bump structures, respectively, are within a range of about 2 μm to about 15 μm.
14. The semiconductor package of claim 11 , wherein a first width of the first junction surface is greater than a second width of a second junction surface, which is formed between the first main pattern and the first sub pattern.
15. The semiconductor package of claim 14 , wherein a fourth width of a first portion of the first main pattern, which is surrounded by the first sub pattern, is greater than the second width.
16. The semiconductor package of claim 11 , wherein a first width of the first junction surface is greater than a third width of a third junction surface, which is formed between the second main pattern and the second sub pattern.
17. The semiconductor package of claim 16 , wherein a fifth width of a second portion of the second main pattern, which is surrounded by the second sub pattern, is greater than the third width.
18. A semiconductor package, comprising:
a package substrate;
a first semiconductor chip stacked on the package substrate, and including a first pad and a first metal bump structure provided on the first pad; and
a second semiconductor chip stacked on the first semiconductor chip, and including a third pad and a second metal bump structure provided on the third pad,
wherein the first and second metal bump structures are bonded to each other to form a conductive connector that electrically connects the first and second semiconductor chips to each other,
wherein the first metal bump structure includes first, second and third metal patterns, wherein the first, second and third metal patterns are stacked on the first pad,
wherein the second metal bump structure includes fourth, fifth and sixth metal patterns, wherein fourth, fifth and sixth metal patterns are stacked on the third pad,
wherein the first, third, fourth and sixth metal patterns include copper (Cu), and the second and fifth metal patterns include a metal having a coefficient of thermal expansion greater than that of copper (Cu),
wherein the second metal pattern has an annular shape covering a peripheral region of the first metal pattern, and the third metal pattern is provided on the first metal pattern to cover the second metal pattern,
wherein the fifth metal pattern has an annular shape covering a peripheral region of the fourth metal pattern, and the sixth metal pattern is provided on the fourth metal pattern to cover the fifth metal pattern, and
wherein diameters of the first and second metal bump structures, respectively, are within a range of about 2 μm to about 15 μm.
19. The semiconductor package of claim 18 , wherein the metal includes at least one of zinc (Zn), aluminum (Al) or silver (Ag).
20. The semiconductor package of claim 18 , wherein the first metal pattern and the fourth metal pattern have a first thickness, wherein the second metal pattern and the fifth metal pattern have a second thickness smaller than the first thickness, and wherein the third metal pattern has a third thickness smaller than the first thickness.