Multiferroic memory with piezoelectric layers and related methods
An electronic device may include a first electrode, a first piezoelectric layer electrically coupled to the first electrode, a first magnetostrictive layer above the first piezoelectric layer, a first tunnel barrier layer above the first magnetostrictive layer, and a ferromagnetic layer above the first ferroelectric layer. The electronic device may further include a second electrode electrically coupled to the ferromagnetic layer a second tunnel barrier layer above the ferromagnetic layer, a second magnetostrictive layer above the second tunnel barrier layer, a second piezoelectric layer above the second magnetostrictive layer, and a third electrode electrically coupled to the second piezoelectric layer. The first piezoelectric layer may be strained responsive to voltage applied across the first and second electrodes, and the second piezoelectric layer may be strained responsive to voltage applied across the second and third electrodes.
1. An electronic device comprising:
a first electrode;
a first piezoelectric layer electrically coupled to the first electrode;
a first magnetostrictive layer above the first piezoelectric layer;
a first tunnel barrier layer above the first magnetostrictive layer;
a ferromagnetic layer above the first tunnel barrier layer;
a second electrode electrically coupled to the ferromagnetic layer;
a second tunnel barrier layer above the ferromagnetic layer;
a second magnetostrictive layer above the second tunnel barrier layer;
a second piezoelectric layer above the second magnetostrictive layer; and
a third electrode electrically coupled to the second piezoelectric layer;
the first piezoelectric layer being strained responsive to voltage applied across the first and second electrodes, and the second piezoelectric layer being strained responsive to voltage applied across the second and third electrodes, to change a ferroelectric state of the ferromagnetic layer while retaining a prior ferroelectric state of the ferromagnetic layer.
2. The electronic device of claim 1 further comprising:
a first read/write electrode coupled to the first magnetostrictive layer; and
a second read/write electrode coupled to the second magnetostrictive layer.
3. The electronic device of claim 1 wherein the first and second magnetostrictive layers comprise at least one of Co, Fe, NiFe, MnAs, Fe 4 N, MnAl, Co 4 N, LSMO, and SrRuO 2 .
4. The electronic device of claim 1 wherein the ferromagnetic layer comprises at least one of Co, Fe, NiFe, MnAs, Fe 4 N, MnAl, Co 4 N, LSMO, and SrRuO 2 .
5. The electronic device of claim 1 wherein the first and second piezoelectric layers comprise at least one of BaTiO 3 , Ba 0.95 Sr 0.05 TiO 3 , Hf 0.5 Zr 0.5 O 2 , PbTiO 3 , YMnO 3 , BiFeO 3 , Si doped HfO 2 , SrBi 2 TaO 9 , and PbZr x Ti 1-x O 3 .
6. The electronic device of claim 1 wherein the first and second tunnel barrier layers comprise an insulator.
7. The electronic device of claim 1 wherein the first and second tunnel layers comprise at least one of La 0.1 Bi 0.9 MnO 3 , Al 2 O 3 , GaO, Geo, MgO, GaAs, AlGaAs.
8. The electronic device of claim 1 wherein the first and second tunnel barrier layers comprise a ferroelectric layer.
9. The electronic device of claim 8 wherein the first and second ferroelectric layers comprise at least one of BaTiO 3 , Ba 0.95 Sr 0.05 TiO 3 , Hf 0.5 Zr 0.5 O 2 , PbTiO 3 , YMnO 3 , BiFeO 3 , Si doped HfO 2 , and SrBi 2 TaO 9 .
10. The electronic device of claim 1 further comprising a substrate beneath the first electrode.
11. The electronic device of claim 10 wherein the substrate comprises at least one of SrTiO 3 , Si, SmScO 3 , and TbScO 3 .
12. The electronic device of claim 1 comprising electronic circuitry coupled to the first, second and third electrodes for operation as a memory device.
13. The electronic device of claim 12 wherein the memory device comprises a plurality of memory cells, each operable to store eight memory states.
14. A memory comprising:
a substrate; and
a plurality of memory cells above the substrate, each memory cell operable to store eight memory states and comprising:
a first electrode;
a first piezoelectric layer electrically coupled to the first electrode;
a first magnetostrictive layer above the first piezoelectric layer;
a first tunnel barrier layer above the first magnetostrictive layer;
a ferromagnetic layer above the first tunnel barrier layer;
a second electrode electrically coupled to the ferromagnetic layer;
a second tunnel barrier layer above the ferromagnetic layer;
a second magnetostrictive layer above the second tunnel barrier layer;
a second piezoelectric layer above the second magnetostrictive layer; and
a third electrode electrically coupled to the second piezoelectric layer;
the first piezoelectric layer being strained responsive to voltage applied across the first and second electrodes, and the second piezoelectric layer being strained responsive to voltage applied across the second and third electrodes, to change a ferroelectric state of the ferromagnetic layer while retaining a prior ferroelectric state of the ferromagnetic layer.
15. The memory of claim 14 wherein each memory cell further comprises:
a first read/write electrode coupled to the first magnetostrictive layer; and
a second read/write electrode coupled to the second magnetostrictive layer.
16. The memory of claim 14 wherein the first and second magnetostrictive layers comprise at least one of Co, Fe, NiFe, MnAs, Fe 4 N, MnAl, Co 4 N, LSMO, and SrRuO 2 .
17. The memory of claim 14 wherein the ferromagnetic layer comprises at least one of Co, Fe, NiFe, MnAs, Fe 4 N, MnAl, Co 4 N, LSMO, and SrRuO 2 .
18. The memory of claim 14 wherein the first and second piezoelectric layers comprise at least one of BaTiO 3 , Ba 0.95 Sr 0.05 TiO 3 , Hf 0.5 Zr 0.5 O 2 , PbTiO 3 , YMnO 3 , BiFeO 3 , Si doped HfO 2 , SrBi 2 TaO 9 , and PbZr x Ti 1-x O 3 .
19. A method for making an electronic device comprising:
forming a first piezoelectric layer electrically coupled to a first electrode;
forming a first magnetostrictive layer above the first piezoelectric layer;
forming a first tunnel barrier layer above the first magnetostrictive layer;
forming a ferromagnetic layer above the first tunnel barrier layer;
forming a second electrode electrically coupled to the ferromagnetic layer;
forming a second tunnel barrier layer above the ferromagnetic layer;
forming a second magnetostrictive layer above the second tunnel barrier layer;
forming a second piezoelectric layer above the second magnetostrictive layer; and
forming a third electrode electrically coupled to the second piezoelectric layer;
the first piezoelectric layer being strained responsive to voltage applied across the first and second electrodes, and the second piezoelectric layer being strained responsive to voltage applied across the second and third electrodes, to change a ferroelectric state of the ferromagnetic layer while retaining a prior ferroelectric state of the ferromagnetic layer.
20. The method of claim 19 further comprising:
forming a first read/write electrode coupled to the first magnetostrictive layer; and
forming a second read/write electrode coupled to the second magnetostrictive layer.
21. The method of claim 19 wherein the first and second magnetostrictive layers comprise at least one of Co, Fe, NiFe, MnAs, Fe 4 N, MnAl, Co 4 N, LSMO, and SrRuO 2 .
22. The method of claim 19 wherein the ferromagnetic layer comprises at least one of Co, Fe, NiFe, MnAs, Fe 4 N, MnAl, Co 4 N, LSMO, and SrRuO 2 .
23. The method of claim 19 wherein the first and second piezoelectric layers comprise at least one of BaTiO 3 , Ba 0.95 Sr 0.05 TiO 3 , Hf 0.5 Zr 0.5 O 2 , PbTiO 3 , YMnO 3 , BiFeO 3 , Si doped HfO 2 , SrBi 2 TaO 9 , and PbZr x Ti 1-x O 3 .