Method for manufacturing a semiconductor structure for detecting vertical electrical leakage
A method of manufacturing semiconductor testing structure includes providing a substrate; forming a first metal layer on the substrate, wherein the first metal layer comprises a plurality of fingers extending along a first direction; forming a dielectric structure on the first metal layer; and forming a plurality of second metal layers on the dielectric structure.
1. A method for manufacturing a semiconductor testing structure, comprising:
providing a substrate;
forming a first metal layer comprising a plurality of fingers extending along a first direction;
a dielectric structure disposed on the first metal layer; and
a plurality of second metal layers extending along a second direction different form the first direction;
forming a plurality of conductive layers on a lateral surface of each of the plurality of second metal layers;
wherein each of the conductive layers is on a sidewall of the dielectric structure;
wherein the dielectric structure comprises a first dielectric layer and a second dielectric layer over the first dielectric layer;
wherein the first dielectric layer has a first upper surface in contact with the second dielectric layer and a second upper surface recessed from the first upper surface, a portion of the first dielectric layer is free from vertically overlapping the conductive layer, and a portion of the second upper surface of the first dielectric layer is free from vertically overlapping the conductive layer.
2. The method of claim 1 , wherein a first portion of the second metal layers has a first pitch, and a second portion of the second metal layers has a second pitch different from the first pitch.
3. The method of claim 1 , wherein the plurality of second metal layers has a first terminal electrically connected to a first conductive pad and a second terminal electrically connected to a second conductive pad.
4. The method of claim 1 , wherein a lateral surface of the first dielectric layer is substantially coplanar with a lateral surface of the second dielectric layer.
5. The method of claim 4 , wherein the lateral surface of the first dielectric layer is not coplanar with the lateral surface of the second metal layer, and the lateral surface of the second dielectric layer is not coplanar with the lateral surface of the second metal layer.
6. The method of claim 4 , wherein the plurality of fingers of the first metal layer is separated by the second dielectric layer.
7. The method of claim 1 , wherein the first dielectric layer comprises a connecting portion connecting the plurality of fingers.