Semiconductor device including electrodes with identical potential
The semiconductor device includes: a semiconductor substrate; a first transistor disposed above the semiconductor substrate and including a first source electrode, a first gate region, and a first drain electrode; and a second transistor disposed above the semiconductor substrate and including a second source electrode, a second gate region, and a second drain electrode. The first source electrode, the second gate region, and the second source electrode are substantially at an identical potential. The first drain electrode and the second drain electrode are substantially at an identical potential.
1. A semiconductor device comprising:
a semiconductor substrate;
a first transistor disposed above the semiconductor substrate and including a first source electrode, a first gate region, and a first drain electrode; and
a second transistor disposed above the semiconductor substrate and including a second source electrode, a second gate region, and a second drain electrode,
wherein the first source electrode, the second gate region, and the second source electrode are substantially at an identical potential, and
the first drain electrode and the second drain electrode are substantially at an identical potential.
2. The semiconductor device according to claim 1 ,
wherein the first source electrode, the first gate region, the first drain electrode, the second drain electrode, the second gate region, and the second source electrode are disposed in stated order in a specific direction.
3. The semiconductor device according to claim 2 ,
wherein the first drain electrode and the second drain electrode are integrated in a common drain electrode.
4. The semiconductor device according to claim 3 ,
wherein a high resistance region is below the common drain electrode.
5. The semiconductor device according to claim 1 ,
wherein the second gate region and the second source electrode are in contact with each other.
6. The semiconductor device according to claim 1 ,
wherein a threshold voltage of the second transistor is a positive value lower than a threshold voltage of the first transistor.
7. The semiconductor device according to claim 1 , comprising:
a first nitride semiconductor layer in which a channel of the first transistor and a channel of the second transistor are formed; and a second nitride semiconductor layer having a band gap larger than a band gap of the first nitride semiconductor layer, the first nitride semiconductor layer and the second nitride semiconductor layer being disposed above the semiconductor substrate,
wherein the first gate region and the second gate region each include a p-type nitride semiconductor.
8. The semiconductor device according to claim 7 ,
wherein the first gate region includes:
a first portion embedded in a recessed region of the second nitride semiconductor layer; and
a first cover portion that covers the first portion,
the second gate region includes:
a second portion embedded in an other recessed region of the second nitride semiconductor layer; and
a second cover portion that covers the second portion,
wherein a depth of the second portion is less than a depth of the first portion.
9. The semiconductor device according to claim 7 ,
wherein the first gate region includes:
a first portion embedded in a recessed region of the second nitride semiconductor layer; and
a first cover portion that covers the first portion,
the second gate region includes:
a second portion embedded in an other recessed region of the second nitride semiconductor layer; and
a second cover portion that covers the second portion,
wherein a width of the second portion is less than a width of the first portion.
10. The semiconductor device according to claim 1 ,
wherein a space between the second drain electrode and the second gate region is greater than a space between the first drain electrode and the first gate region.
11. The semiconductor device according to claim 1 ,
wherein a space between the second drain electrode and the second gate region is less than a space between the first drain electrode and the first gate region.
12. The semiconductor device according to claim 2 , comprising:
a plurality of unit transistors,
wherein each of the plurality of unit transistors includes the first transistor and the second transistor,
the plurality of unit transistors are aligned in the specific direction, and
an internal configuration of each of the plurality of unit transistors is in reflection symmetry with an internal configuration of an adjacent unit transistor in a plan view of the semiconductor substrate.
13. The semiconductor device according to claim 1 ,
wherein the first drain electrode, the first gate region, the first source electrode, the second source electrode, the second gate region, and the second drain electrode are disposed in stated order in a specific direction.
14. The semiconductor device according to claim 13 ,
wherein the first source electrode and the second source electrode are integrated in a common source electrode.
15. The semiconductor device according to claim 13 , comprising:
a plurality of unit transistors,
wherein each of the plurality of unit transistors includes the first transistor and the second transistor,
the plurality of unit transistors are aligned in the specific direction, and
an internal configuration of each of the plurality of unit transistors is in reflection symmetry with an internal configuration of an adjacent unit transistor in a plan view of the semiconductor substrate.
16. The semiconductor device according to claim 1 , comprising:
a plurality of unit transistors,
wherein each of the plurality of unit transistors includes the first transistor and the second transistor, and
an internal configuration of each of the plurality of unit transistors is in reflection symmetry with an internal configuration of an adjacent unit transistor in a plan view of the semiconductor substrate.