Methods and devices for growing crystals with high uniformity without annealing
The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.
1. A crystal growth device, comprising:
a temperature field device;
a crucible located in the temperature field device; and
a feeding component configured to feed reactant supplements into the crucible, wherein the crucible includes an inner crucible and an outer crucible, the inner crucible and the outer crucible including a sealed gap where a feed port used to receive reactant supplements and an exhaust port used to exhaust gas are provided, a bottom of an outer side of the inner crucible includes a plurality of openable and closable through holes for feeding the received reactant supplements into the inner crucible.
2. The crystal growth device of claim 1 , wherein the gap between the inner crucible and the outer crucible forms a reactant melting zone.
3. The crystal growth device of claim 1 , wherein the crystal growth device further includes a heater, the heater being mounted above the crucible.
4. The crystal growth device of claim 3 , wherein
the heater is made of at least one of iridium, platinum, molybdenum, tungsten, graphite, or a high-temperature-resistant material with a high melting point which can be heated by electromagnetic induction;
an inner diameter of the heater is 40-240 mm; and
a height of the heater is 2-200 mm;
wherein the high-temperature-resistant material refers to a material having a resistant temperature that is higher than a temperature required for crystal growth or a highest reachable temperature inside the crystal growth device, and the high melting point refers to that the melting point of the material is higher than the temperature required for the crystal growth or the highest reachable temperature inside the crystal growth device.
5. The crystal growth device of claim 1 , wherein the feeding component includes a weighing assembly, a transfer assembly, and a control assembly, wherein
the weighing assembly is configured to weigh the reactant supplements based on a supplement weight of the reactant supplements determined by the control assembly;
the transfer assembly is configured to transfer the reactant supplements weighed by the weighing assembly to the crucible; and
the control assembly is configured to:
obtain a weight of a crystal being grown;
determine the supplement weight of the reactant supplements at least based on the weight of the crystal being grown and a ratio among reactants for growing the crystal;
obtain a weight of the reactant supplements weighed by the weighing assembly in real-time; and
control the transfer assembly to transfer the reactant supplements from the weighing assembly to the crucible when the weight of the reactant supplements weighed by the weighing assembly is equal to the supplement weight of the reactant supplements.
6. The crystal growth device of claim 5 , wherein
the feeding component further includes a holding assembly configured to hold the reactant supplements, and
the control assembly is further configured to:
control the holding assembly to transfer the reactant supplements to the weighing assembly when the weight of the reactant supplements weighed by the weighing assembly is less than the supplement weight of the reactant supplements; and
control the holding assembly to stop transferring the reactant supplements to the weighing assembly when the weight of the reactant supplements weighed by the weighing assembly is equal to the supplement weight of the reactant supplements.
7. The crystal growth device of claim 6 , wherein the holding assembly includes a first drive motor, a first transmission structure and a first container, a bottom of the first container is through; and
the control assembly is further configured to:
control the first drive motor to drive the first transmission structure to move and further to open a through port of the first container when the weight of the reactant supplements weighed by the weighing assembly is less than the supplement weight of the reactant supplements; and
control the first drive motor to drive the first transmission structure to close the through port when the weight of the reactant supplements weighed by the weighing assembly is equal to the supplement weight of the reactant supplements.
8. The crystal growth device of claim 7 , wherein the weighing assembly includes a second container configured to receive the reactant supplements dropped from the first container and a weighing device with a signal transmission function;
wherein the second container is placed on the weighing device and weighed by the weighing device.
9. The crystal growth device of claim 8 , wherein the weighing device transmit the weight of the reactant supplements obtained by the weighing device to the control assembly in real-time.
10. The crystal growth device of claim 6 , wherein the transfer assembly includes a second drive motor, a second transmission structure and a transfer structure in communication with the feed port; and
the control assembly is further configured to:
control the second drive motor to drive the second transmission structure to grab the second container and pour the reactant supplements placed in the second container into the transfer structure.
11. The crystal growth device of claim 1 , wherein the exhaust port is located at an opposite position of the feed port.
12. The crystal growth device of claim 1 , wherein the crystal growth device further includes a furnace, wherein
the furnace is open; and
the temperature field device is sealed.
13. The crystal growth device of claim 1 , wherein the inner crucible and the outer crucible are crucibles of different materials.
14. The crystal growth device of claim 1 , wherein
the inner crucible is made of a conductor; and/or
the outer crucible is made of a conductor.
15. The crystal growth device of claim 1 , wherein
the inner crucible is made of at least one of iridium, molybdenum, tungsten, rhenium, graphite, or tungsten-molybdenum alloy; and/or
the outer crucible is made of at least one of iridium, molybdenum, tungsten, rhenium, graphite, or tungsten-molybdenum alloy.
16. The crystal growth device of claim 1 , wherein the inner crucible is sheathed in the outer crucible; and an outer surface of the outer crucible is coated with a coating.
17. The crystal growth device of claim 16 , wherein the coating includes at least one of a zirconia coating, a nano ceramic coating, a ZS-1023 ultra-high temperature metal anti-oxidation coating, or a CY-CM refractory and thermal insulation coating.
18. The crystal growth device of claim 1 , wherein
a thickness of the inner crucible is 1-20 mm; and/or
a thickness of the outer crucible is 1-20 mm.
19. The crystal growth device of claim 1 , wherein the temperature field device includes a bottom plate, a cover plate, a drum, and a filler, wherein
the bottom plate is mounted on a bottom of the temperature field device and covers an open end of the drum,
the cover plate is mounted on a top of the temperature field device and covers the other open end of the drum, and
the filler is filled inside the drum.