Semiconductor structures having wells with protruding sections for pickup cells
A semiconductor structure includes a substrate having a first well of a first conductivity type and a second well of a second conductivity type. From a top view, the first well includes first and seconds edges extending along a first direction. The second edge has multiple turns, resulting in the first well having a protruding section and a recessed section. The semiconductor structure further includes a first source/drain feature over the protruding section and a second source/drain feature over a main body of the first well. The first source/drain feature is of the first conductivity type. The second source/drain feature is of the second conductivity type. The first and the second source/drain features are generally aligned along a second direction perpendicular to the first direction from the top view.
1. A semiconductor structure, comprising:
a substrate having a first well of a first conductivity type and a second well of a second conductivity type that is opposite of the first conductivity type, wherein from a top view, the second well includes a main body that extends lengthwise along a first direction, a protruding section that protrudes out of the main body along a second direction perpendicular to the first direction, and a recessed section that recedes into the main body along a third direction opposite to the second direction; and
a first source/drain feature directly over the protruding section of the second well, wherein the first source/drain feature is of the second conductivity type.
2. The semiconductor structure of claim 1 , wherein from the top view, the second well includes a first edge that is generally straight and extends along the first direction and a second edge that is opposite to the first edge and extends generally along the first direction, wherein the second edge has multiple turns, resulting in the protruding section and the recessed section of the second well.
3. The semiconductor structure of claim 2 , wherein the first well includes a third edge that is generally straight and extends along the first direction and a fourth edge that is opposite to the third edge and extends generally along the first direction, wherein the fourth edge has multiple turns, resulting in a protruding section of the first well that protrudes out of a main body of the first well and a recessed section of the first well that recedes into the main body of the first well.
4. The semiconductor structure of claim 3 , wherein the protruding section of the first well fits into the recessed section of the second well, and the protruding section of the second well fits into the recessed section of the first well.
5. The semiconductor structure of claim 1 , further comprising:
a first source/drain contact over the first source/drain feature;
a first gate electrode adjacent to the first source/drain contact;
a first gate spacer on a sidewall of the first gate electrode;
a first etch stop layer laterally between the first source/drain contact and the first gate spacer; and
a first dielectric layer covering an entire top surface of the first gate electrode.
6. The semiconductor structure of claim 1 , further comprising:
a second source/drain feature directly over the main body of the second well, wherein the second source/drain feature is of the first conductivity type, wherein the first and the second source/drain features are generally aligned along the second direction from the top view.
7. The semiconductor structure of claim 6 , further comprising:
a second source/drain contact over the second source/drain feature;
a second gate electrode adjacent to the second source/drain contact;
a second gate spacer on a sidewall of the second gate electrode;
a second etch stop layer laterally between the second source/drain contact and the second gate spacer;
a second dielectric layer over a top surface of the second gate electrode; and
a gate contact penetrating through the second dielectric layer and electrically connected to the second gate electrode.
8. A semiconductor structure, comprising:
a substrate having a first well of a first conductivity type and a second well of a second conductivity type that is opposite of the first conductivity type, wherein from a top view, the first well includes a main body that extends lengthwise along a first direction, a protruding section that protrudes out of the main body along a second direction perpendicular to the first direction, and a recessed section that recedes into the main body along a third direction opposite to the second direction; and
a first source/drain feature directly over the protruding section of the first well, wherein the first source/drain feature is of the first conductivity type.
9. The semiconductor structure of claim 8 , further comprising:
a first source/drain contact over the first source/drain feature;
a first gate electrode adjacent to the first source/drain contact;
a first gate spacer on a sidewall of the first gate electrode;
a first etch stop layer laterally between the first source/drain contact and the first gate spacer; and
a first dielectric layer covering an entire top surface of the first gate electrode.
10. The semiconductor structure of claim 8 , further comprising:
a second source/drain feature directly over the main body of the first well, wherein the second source/drain feature is of the second conductivity type, wherein the first and the second source/drain features are generally aligned along the second direction from the top view.
11. The semiconductor structure of claim 10 , further comprising:
a second source/drain contact over the second source/drain feature;
a second gate electrode adjacent to the second source/drain contact;
a second gate spacer on a sidewall of the second gate electrode;
a second etch stop layer laterally between the second source/drain contact and the second gate spacer;
a second dielectric layer over a top surface of the second gate electrode; and
a gate contact penetrating through the second dielectric layer and electrically connected to the second gate electrode.
12. The semiconductor structure of claim 8 , further comprising:
multiple semiconductor layers connected to the first source/drain feature, wherein the first gate electrode wraps around each of the multiple semiconductor layers.
13. The semiconductor structure of claim 8 , wherein the second well includes another main body that extends lengthwise along the first direction, another protruding section that protrudes out of the main body of the second well along the third direction, and another recessed section that recedes into the main body of the second well along the second direction.
14. The semiconductor structure of claim 13 , wherein the protruding section of the first well fits into the recessed section of the second well, and the protruding section of the second well fits into the recessed section of the first well.
15. The semiconductor structure of claim 8 , wherein the protruding section of the first well is one of multiple protruding sections of the first well.
16. A semiconductor structure, comprising:
a substrate having a first well of a first conductivity type and a second well of a second conductivity type that is opposite of the first conductivity type, wherein from a top view, the first well includes a main body that extends lengthwise along a first direction, a protruding section that protrudes out of the main body along a second direction perpendicular to the first direction, and a recessed section that recedes into the main body along a third direction opposite to the second direction;
a first source/drain feature directly over the protruding section of the first well, wherein the first source/drain feature is of the first conductivity type; and
a second source/drain feature directly over the second well, wherein the second source/drain feature is of the first conductivity type, wherein the first and second source/drain features are generally aligned along the first direction.
17. The semiconductor structure of claim 16 , further comprising:
a first semiconductor fin extending upwards from the substrate and extending lengthwise along the first direction, wherein the first semiconductor fin extends over the second well and the protruding section of the first well.
18. The semiconductor structure of claim 17 , further comprising:
a second semiconductor fin extending upwards from the substrate and extending lengthwise along the first direction, wherein the second semiconductor fin extends over the second well and does not extend over the protruding section of the first well from the top view, wherein an edge of the protruding section of the first well is between the first and the second semiconductor fins from the top view.
19. The semiconductor structure of claim 16 , wherein the second well includes another main body that extends lengthwise along the first direction, another protruding section that protrudes out of the main body of the second well along the third direction, and another recessed section that recedes into the main body of the second well along the second direction, wherein the protruding section of the first well fits into the recessed section of the second well, and the protruding section of the second well fits into the recessed section of the first well.
20. The semiconductor structure of claim 17 , further comprising:
a second semiconductor fin extending upwards from the substrate and extending lengthwise along the first direction, wherein the second semiconductor fin extends over the main body of the first well and the protruding section of the second well;
a third source/drain feature directly over the protruding section of the second well, wherein the third source/drain feature is of the second conductivity type; and
a fourth source/drain feature directly over the main body of the first well, wherein the fourth source/drain feature is of the second conductivity type.