IP Library › Granted Patent US 12,288,826
Granted Patent B2
US 12,288,826 · App. 18/244,073 · Granted Apr 29, 2025

Conductive contacts for polycrystalline silicon features of solar cells

Inventor: Seung Bum Rim (Palo Alto, CA)
Assignee: Maxeon Solar Pte. Ltd.
H01L31/022425H01L31/02168H01L31/02363H01L31/028H01L31/03682H01L31/1804
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Quick Facts
Patent No.
US 12,288,826
App. No.
18/244,073
Granted
Apr 29, 2025
Kind
B2
Abstract

Methods of fabricating conductive contacts for polycrystalline silicon features of solar cells, and the resulting solar cells, are described. In an example, a method of fabricating a solar cell includes providing a substrate having a polycrystalline silicon feature. The method also includes forming a conductive paste directly on the polycrystalline silicon feature. The method also includes firing the conductive paste at a temperature above approximately 700 degrees Celsius to form a conductive contact for the polycrystalline silicon feature. The method also includes, subsequent to firing the conductive paste, forming an anti-reflective coating (ARC) layer on the polycrystalline silicon feature and the conductive contact. The method also includes forming a conductive structure in an opening through the ARC layer and electrically contacting the conductive contact.

Claims (11)

1. A method of fabricating a solar cell, the method comprising:

providing a substrate having a polycrystalline silicon feature;

forming a conductive paste directly on the polycrystalline silicon feature;

firing the conductive paste at a temperature above approximately 700 degrees Celsius to form a conductive contact for the polycrystalline silicon feature;

subsequent to firing the conductive paste, forming an anti-reflective coating (ARC) layer on the polycrystalline silicon feature and the conductive contact; and

forming a conductive structure in an opening through the ARC layer and electrically contacting the conductive contact, wherein the conductive structure is on and in direct physical contact with a top of the conductive contact, and wherein the conductive structure is along and in direct physical contact with sides of the conductive contact.

2. The method of claim 1 , wherein forming the conductive paste comprises printing a paste comprising silver (Ag) particles.

3. The method of claim 1 , wherein forming the ARC layer comprises forming a layer comprising silicon nitride or amorphous silicon.

4. A solar cell fabricated according to the method of claim 1 .

5. The method of claim 1 , wherein the substrate comprises a texturized surface.

6. The method of claim 1 , wherein the substrate is a monocrystalline silicon substrate.

Assignments (5)
SECURITY INTEREST Recorded Jun 27, 2024
From: MAXEON SOLAR PTE. LTD.
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 067924/0062 →
SECOND LIEN SECURITY INTEREST AGREEMENT Recorded Jun 26, 2024
From: MAXEON SOLAR PTE. LTD
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 071343/0553 →
SECURITY INTEREST Recorded Jun 5, 2024
From: MAXEON SOLAR PTE. LTD.
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 067637/0598 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 12, 2023
From: SUNPOWER CORPORATION
To: MAXEON SOLAR PTE. LTD.
Reel/Frame 064882/0631 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 11, 2023
From: RIM, SEUNG BUM
To: SUNPOWER CORPORATION
Reel/Frame 064862/0554 →
Continuity (2)
Division 15859073 · Dec 29, 2017
Related Publication 20230420582A1 · Dec 28, 2023
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