Acoustic wave filter device
An acoustic wave filter device includes first and second signal terminals, a series arm circuit connected between the first and second signal terminals and including series arm resonators, and a parallel arm circuit connected in series between the series arm circuit and a ground potential and including at least one parallel arm resonator. The series arm resonators include first and second series arm resonators having different anti-resonant frequencies from each other. The anti-resonant frequency of the first series arm resonator is lowest among anti-resonant frequencies of the plurality of series arm resonators. The first series arm resonator and the second series arm resonator are connected to each other without another circuit element interposed therebetween.
1. An acoustic wave filter device comprising:
a first signal terminal;
a second signal terminal;
a series arm circuit connected between the first signal terminal and the second signal terminal and including a plurality of series arm resonators; and
a parallel arm circuit connected in series between the series arm circuit and a ground potential and including at least one parallel arm resonator; wherein
the plurality of series arm resonators include a first series arm resonator and a second series arm resonator having different anti-resonant frequencies from each other;
the anti-resonant frequency of the first series arm resonator is lowest among anti-resonant frequencies of the plurality of series arm resonators; and
the first series arm resonator and the second series arm resonator are connected to each other without another circuit element interposed therebetween.
2. The acoustic wave filter device according to claim 1 , wherein the anti-resonant frequency of the second series arm resonator is highest among the anti-resonant frequencies of the plurality of series arm resonators.
3. The acoustic wave filter device according to claim 1 , further comprising:
a plurality of the parallel arm circuits; wherein
the at least one parallel arm resonator is in each of the plurality of parallel arm circuits; and
the first series arm resonator and the second series arm resonator are in the series arm circuit and between portions where two of the plurality of parallel arm circuits are connected to the series arm circuit.
4. The acoustic wave filter device according to claim 1 , wherein
the acoustic wave filter device is connected to an antenna; and
a series arm resonator closest to the antenna among the plurality of series arm resonators is one of the first series arm resonator and the second series arm resonator.
5. An acoustic wave filter device comprising:
a first signal terminal;
a second signal terminal;
a series arm circuit connected between the first signal terminal and the second signal terminal and including at least one series arm resonator; and
a parallel arm circuit connected in series between the series arm circuit and a ground potential and including a plurality of parallel arm resonators; wherein
the plurality of parallel arm resonators include a first parallel arm resonator and a second parallel arm resonator, the first parallel arm resonator and the second parallel arm resonator having different resonant frequencies from each other;
a resonant frequency of the first parallel arm resonator is highest among resonant frequencies of the plurality of parallel arm resonators; and
the first parallel arm resonator and the second parallel arm resonator are connected to each other without another circuit element interposed therebetween.
6. The acoustic wave filter device according to claim 5 , wherein a resonant frequency of the second parallel arm resonator is lowest among the resonant frequencies of the plurality of parallel arm resonators.
7. The acoustic wave filter device according to claim 1 , wherein
the series arm resonator and the parallel arm resonator each include a piezoelectric substrate;
the piezoelectric substrate includes a high-acoustic-velocity material layer and a piezoelectric layer directly or indirectly on the high-acoustic-velocity material layer; and
an acoustic velocity of a bulk wave propagating through the high-acoustic-velocity material layer is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric layer.
8. The acoustic wave filter device according to claim 7 , wherein
the piezoelectric substrate includes a low-acoustic-velocity film between the high-acoustic-velocity material layer and the piezoelectric layer; and
an acoustic velocity of a bulk wave propagating through the low-acoustic-velocity film is lower than an acoustic velocity of a bulk wave propagating through the piezoelectric layer.
9. The acoustic wave filter device according to claim 7 , wherein the high-acoustic-velocity material layer is a high-acoustic-velocity support substrate.
10. The acoustic wave filter device according to claim 7 , wherein
the piezoelectric substrate includes a support substrate; and
the high-acoustic-velocity material layer is a high-acoustic-velocity film on the support substrate.
11. The acoustic wave filter device according to claim 1 , wherein
the series arm resonator and the parallel arm resonator each include a piezoelectric substrate; and
the piezoelectric substrate includes only a piezoelectric layer.
12. The acoustic wave filter device according to claim 5 , wherein
the series arm resonator and the parallel arm resonator each include a piezoelectric substrate;
the piezoelectric substrate includes a high-acoustic-velocity material layer and a piezoelectric layer directly or indirectly on the high-acoustic-velocity material layer; and
an acoustic velocity of a bulk wave propagating through the high-acoustic-velocity material layer is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric layer.
13. The acoustic wave filter device according to claim 12 , wherein
the piezoelectric substrate includes a low-acoustic-velocity film between the high-acoustic-velocity material layer and the piezoelectric layer; and
an acoustic velocity of a bulk wave propagating through the low-acoustic-velocity film is lower than an acoustic velocity of a bulk wave propagating through the piezoelectric layer.
14. The acoustic wave filter device according to claim 12 , wherein the high-acoustic-velocity material layer is a high-acoustic-velocity support substrate.
15. The acoustic wave filter device according to claim 12 , wherein
the piezoelectric substrate includes a support substrate; and
the high-acoustic-velocity material layer is a high-acoustic-velocity film on the support substrate.
16. The acoustic wave filter device according to claim 5 , wherein
the series arm resonator and the parallel arm resonator each include a piezoelectric substrate; and
the piezoelectric substrate includes only a piezoelectric layer.