Quantum dot structure, method for producing a quantum dot structure, and light emitting device

1. A quantum dot structure, comprising:

a nanocrystalline core from a first semiconductor material,

a nanocrystalline shell from a second semiconductor material on the nanocrystalline core,

at least one encapsulation layer on the nanocrystalline shell,

wherein functional groups are present within the at least one encapsulation layer and/or on a surface of the at least one encapsulation layer facing away from the nanocrystalline shell, the functional groups being able to chemically react in a reversible manner.

2. The quantum dot structure according to claim 1 , wherein the functional groups are able to react by a condensation and a hydrolysis reaction.

3. The quantum dot structure according to claim 1 , wherein the at least one encapsulation layer comprises an encapsulation material and the functional groups are chemically bonded to the encapsulation material.

4. The quantum dot structure according to claim 3 , wherein the encapsulation material is selected from a group of metal oxides the group consisting of silica, titanium oxide, zirconium oxide, alumina, magnesium oxide, and hafnia.

5. The quantum dot structure according to claim 1 , wherein the functional groups comprise first functional groups and second functional groups and a pair of first functional groups and second functional groups is chosen from amine groups and carboxyl groups, thiourea groups and hydroxyl groups, hydroxyl groups and carboxyl groups, and carboxyl groups and hydroxyl groups.

6. The quantum dot structure according to claim 1 , wherein the functional groups are chosen from a group of α-hydroxy aldehyde groups, β-hydroxy aldehyde groups, α-hydroxy ketone groups, β-hydroxy ketone groups, and mixtures thereof.

7. The quantum dot structure according to claim 1 , comprising a plurality of encapsulation layers, wherein each two encapsulation layers are separated by the functional groups.

8. The quantum dot structure according to claim 1 , further comprising a sealing layer on the at least one encapsulation layer, the sealing layer comprising a controlled porous glass.

9. The quantum dot structure according to claim 8 , wherein the controlled porous glass comprises silica nanopowder.

10. The quantum dot structure according to claim 1 , further comprising a barrier layer on the at least one encapsulation layer, the barrier layer comprising a metal oxide of a group consisting of silica, titanium oxide, zirconium oxide, alumina, magnesium oxide, and hafnia.

11. The quantum dot structure according to claim 10 , wherein the barrier layer has a thickness in a range of up to 50 nm inclusive.

12. The quantum dot structure according to claim 1 , wherein a moisture content on a surface of the nanocrystalline shell and/or the nanocrystalline core is controlled by the at least one encapsulation layer.

13. A method for producing a quantum dot structure, comprising:

forming a nanocrystalline core from a first semiconductor material,

forming a nanocrystalline shell from a second semiconductor material on the nanocrystalline core,

forming at least one encapsulation layer on the nanocrystalline shell,

wherein functional groups are present within the at least one encapsulation layer and/or on a surface of the at least one encapsulation layer facing away from the nanocrystalline shell, the functional groups being able to chemically react in a reversible manner.

14. The method according to claim 13 , wherein forming the at least one encapsulation layer is performed by a sol-gel process.

15. The method according to claim 14 , wherein the sol-gel process is chosen from a reverse micelle sol-gel process and a Stober method.

16. The method according to claim 14 , wherein forming the at least one encapsulation layer comprises applying precursors of an encapsulation material and subsequently applying precursors of a functionalized encapsulation material.

17. The method according to claim 16 , wherein after forming the at least one encapsulation layer the surface of the at least one encapsulation layer facing away from the nanocrystalline shell is treated with a base or an acid and/or remaining precursor and reaction byproducts are removed from the surface of the at least one encapsulation layer.

18. The method according to claim 17 , further comprising forming at least one additional encapsulation layer on the surface of the at least one encapsulation layer facing away from the nanocrystalline shell.

19. The method according to claim 16 , wherein the precursors of the encapsulation material are chosen from a group consisting of tetramethyl orthosilicate, tetraethyl orthosilicate, titanium isopropoxide, titanium butoxide, aluminum isopropoxide, aluminum-tri-sec-butoxide, aluminum tert-butoxide, zirconium propoxide, zirconium butoxide, tetraisopropoxyhafnium, hafnium n-butoxide, magnesium chloride hexahydrate, and mixtures thereof, and/or wherein the precursors of the functionalized encapsulation material are chosen from a group consisting of (3-aminopropyl)triethoxysilane, (triethoxysilyl)alkanoic acid, thiourea, silyl esters, dicholorsilanes, α-hydroxy aldehydes, β-hydroxy aldehydes, α-hydroxy ketones, β-hydroxy ketones, and mixtures thereof.

20. A light emitting device comprising:

a semiconductor chip configured to emit electromagnetic radiation of a first wavelength range, and

a conversion layer on the semiconductor chip, wherein the conversion layer is configured to convert the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, wherein the conversion layer comprises a quantum dot structure according to claim 1 .