High-durability coloring metal member and method of producing the same
Provided is a high-durability coloring metal member. The high-durability coloring metal member includes a metal substrate, a dielectric layer provided on the metal substrate, and an oxynitride compound layer provided on the dielectric layer. The metal member is capable of expressing vivid and various colors with a color protection layer applied on the surface of the metal member.
1. A high-durability coloring metal member comprising:
a metal substrate;
a dielectric layer provided on the metal substrate; and
an oxynitride compound layer provided on the dielectric layer,
wherein contents of nitrogen and oxygen contained in the oxynitride compound layer are represented as atomic fractions, and a ratio of nitrogen to oxygen is greater than 1.
2. The high-durability coloring metal member of claim 1 , wherein the oxynitride compound layer comprises CrN x O (1-x) , TiN x O (1-x) , ZrN x O (1-x) , (Cr, Ti, Zr)N x O (1-x) , or (Ti, Al)N x O (1-x) , where x is greater than 0.5.
3. The high-durability coloring metal member of claim 1 , wherein the oxynitride compound layer has a thickness ranging from 5 nm to 100 nm.
4. The high-durability coloring metal member of claim 1 , wherein the dielectric layer comprises SiO 2 , Al 2 O 3 , MgO, TiO 2 , WO 3 , indium tin oxide (ITO), Si 3 N 4 , or AlN.
5. The high-durability coloring metal member of claim 1 , wherein the dielectric layer has a thickness ranging from 30 nm to 400 nm.
6. The high-durability coloring metal member of claim 1 , further comprising an oxide layer provided on the oxynitride compound layer.
7. The high-durability coloring metal member of claim 6 , wherein the oxide layer comprises SiO 2 or Al 2 O 3 .
8. The high-durability coloring metal member of claim 6 , wherein the oxide layer has a thickness ranging from 400 nm to 15 μm.
9. A method of producing a high-durability coloring metal member, the method comprising:
forming a dielectric layer on a metal substrate; and
forming an oxynitride compound layer on the dielectric layer,
wherein a ratio of nitrogen to oxygen contained in the oxynitride compound layer is greater than 1.
10. The method of claim 9 , wherein the forming of the oxynitride compound layer is performed using any one selected from among physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD).
11. The method of claim 9 , wherein the oxynitride compound layer comprises CrN x O (1-x) , TiN x O (1-x) , ZrN x O (1-x) , (Cr, Ti, Zr)N x O (1-x) , or (Ti, Al) N x O (1-x) , where x is greater than 0.5.
12. The method of claim 9 , wherein the oxynitride compound layer has a thickness ranging from 5 nm to 100 nm.
13. The method of claim 9 , wherein the dielectric layer comprises SiO 2 , Al 2 O 3 , MgO, TiO 2 , WO 3 , indium tin oxide (ITO), Si 3 N 4 , or AlN.
14. The method of claim 9 , wherein the dielectric layer has a thickness ranging from 30 nm to 400 nm.
15. The method of claim 9 , further comprising forming an oxide layer on the oxynitride compound layer.
16. The method of claim 15 , wherein the oxide layer comprises SiO 2 or Al 2 O 3 .
17. The method of claim 15 , wherein the oxide layer has a thickness ranging from 400 nm to 15 μm.