Alkaline cleaning composition, cleaning method, and manufacturing method of semiconductor
An alkaline cleaning composition is provided. The alkaline cleaning composition includes an alkaline compound, 5% to 40% by weight of propylene glycol monomethyl ether, 10% to 30% by weight of water, and a polar solvent. Wherein, the polar solvent includes acetals, glycol ethers, pyrrolidones, or a combination thereof, and the alkaline cleaning composition is free of benzenesulfonic acid.
1. An alkaline cleaning composition, comprising a quaternary ammonium hydroxide, 5% to 40% by weight of propylene glycol monomethyl ether, 10% to 30% by weight of water, and a polar solvent;
wherein the polar solvent comprises a solvent having a structure shown in a following formula (3), (4), or (5), or a combination thereof:
wherein R 1 and R 2 are independently hydrogen or a C 1 -C 6 alkyl group that is unsubstituted or at least one —CH 2 — is substituted with —O—; R 3 and R 4 are independently a C 1 -C 4 alkylene group; and R 5 and R 6 are independently a C 1 -C 3 alkyl group;
wherein R 1 is hydrogen or a C 1 -C 4 alkyl group that is unsubstituted or substituted with a hydroxyl group; R 2 and R 3 are independently hydrogen or a C 1 -C 2 alkyl group; and n is an integer ranging from 1 to 4; and
wherein R 1 is a C 1 -C 3 alkyl group; and the alkaline cleaning composition is free of benzenesulfonic acid.
2. The alkaline cleaning composition according to claim 1 , wherein the quaternary ammonium hydroxide has a structure shown in a following formula (1):
wherein R 1 to R 4 are each independently a C 1 -C 4 alkyl group that is unsubstituted or substituted with a hydroxyl group.
3. The alkaline cleaning composition according to claim 1 , wherein the quaternary ammonium hydroxide is at least one selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide, (2-hydroxyethyl)trimethylammonium hydroxide, bis(2-hydroxyethyl)dimethylammonium hydroxide, and tris(2-hydroxyethyl)methylammonium hydroxide.
4. The alkaline cleaning composition according to claim 1 , wherein an amount of the quaternary ammonium hydroxide in the alkaline cleaning composition ranges from 0.1% to 20% by weight.
5. The alkaline cleaning composition according to claim 1 , wherein the polar solvent is at least one selected from the group consisting of 4,8-dimethyl-2,5,7,10-tetraoxaundecane, 2,5,7,10-tetraoxaundecane, 6-(2-methoxyethoxy)-2,5,7,10-tetraoxaundecane, propylene glycol, propylene glycol monoethyl ether, ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, and N-isopropyl-2-pyrrolidone.
6. The alkaline cleaning composition according to claim 1 , wherein an amount of the polar solvent in the alkaline cleaning composition ranges from 5% to 84.9% by weight.
7. An alkaline cleaning composition, comprising a quaternary ammonium hydroxide, 5% to 40% by weight of propylene glycol monomethyl ether, 10% to 30% by weight of water, and a polar solvent;
wherein the polar solvent is at least one selected from the group consisting of N-isopropyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, 2,5,7,10-tetraoxaundecane, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, and propylene glycol, and the alkaline cleaning composition is free of benzenesulfonic acid.
8. A cleaning method, comprising a step of using the alkaline cleaning composition according to claim 1 to clean and remove a residue or a residual film attached onto a device component, wherein the residue or the residual film comprises a resist or an inorganic substance comprising silicon atoms.
9. A manufacturing method of a semiconductor, comprising following steps:
providing a substrate;
coating a siloxane resin layer on the substrate;
coating a photoresist layer on the siloxane resin layer to form a multilayered substrate;
performing photolithography and etching processes on the multilayered substrate; and
using the alkaline cleaning composition according to claim 1 to clean and remove residues of the siloxane resin layer and the photoresist layer attached onto the substrate.