RF communication device without temporary connection line, and manufacturing method
It is described an RF communication device comprising: i) an RF antenna functionality; ii) at least one antenna pad connected to the RF antenna functionality; iii) a further functionality which is not an RF antenna functionality; and iv) at least one non-antenna pad electrically connected to the further functionality. The antenna pad and the non-antenna pad are arranged to be short-circuited with each other, and the non-antenna pad is electrically connected via a connection line to the further functionality within the RF communication device. Further, a method of manufacturing an RF communication device is described.
1. A radio frequency (RF) communication device, comprising an integrated circuit (IC) chip that contains:
a first pad configured to be electrically coupled to a first antenna segment, and configured to receive RF energy from the first antenna segment;
an RF antenna circuit electrically coupled to the first pad;
a second pad configured to be electrically coupled to the first antenna segment, and configured to receive the RF energy from the first antenna segment;
a test circuit configured to generate a control signal based on the RF energy; and
a first control element coupled between the test circuit and the second pad, wherein the first control element is configured to receive the control signal, wherein when the control signal has a first value, the first control element is configured to operate in a test mode in which the first control element electrically couples the test circuit and the second pad, and when the control signal has a second value, the first control element is configured to operate in an RF communication mode in which the first control element electrically isolates the test circuit from the second pad.
2. The RF communication device according to claim 1 , wherein the RF communication device is one of a group which consists of an RF identification (RFID) device, an RFID tag, and an RFID IC.
3. The RF communication device according to claim 1 , wherein the first control element comprises an inverter.
4. The RF communication device according to claim 1 , wherein the first control element comprises at least two transistors.
5. The RF communication device according to claim 4 , wherein the at least two transistors comprise an NMOS transistor and a PMOS transistor.
6. The RF communication device according to claim 1 , further comprising:
a peak detector arranged between the second pad and the first control element.
7. The RF communication device according to claim 6 , wherein the peak detector comprises a positive peak detector element and a negative peak detector element.
8. The RF communication device according to claim 1 , wherein the first control element comprises a charge pump.
9. The RF communication device according to claim 1 , further comprising:
a third pad contained within the IC chip and electrically coupled to the RF antenna circuit;
a fourth pad contained within the IC chip; and
an antenna coupled to the IC chip, wherein the antenna is configured as a slit antenna that includes the first antenna segment and a second antenna segment, wherein the first pad and the second pad are connected to the first antenna segment, the third pad and the fourth pad are connected to the second antenna segment, and the first and second antenna segments are divided by a slit.
10. The RF communication device according to claim 9 , wherein the antenna is configured as a single-slit antenna.
11. A method of manufacturing an RF communication device, the method comprising:
providing a wafer with a plurality of RF communication device preforms, wherein each of the preforms include
a first pad configured to be electrically coupled to a first antenna segment, and configured to receive RF energy from the first antenna segment;
an RF antenna circuit electrically coupled to the first pad;
a second pad configured to be electrically coupled to the first antenna segment, and configured to receive the RF energy from the first antenna segment;
a test circuit configured to generate a control signal based on the RF energy; and
a first control element coupled between the test circuit and the second pad, wherein the first control element is configured to receive the control signal, wherein when the control signal has a first value, the first control element is configured to operate in a test mode in which the first control element electrically couples the test circuit and the second pad, and when the control signal has a second value, the first control element is configured to operate in an RF communication mode in which the first control element electrically isolates the test circuit from the second pad.
12. The RF communication device according to claim 1 , further comprising:
the first antenna segment coupled between the first and second pads, wherein the first antenna segment short circuits the first and second pads.
13. The RF communication device according to claim 12 , wherein the first antenna segment is developed over a planar inlay.
14. The RF communication device according to claim 1 , wherein the test circuit generates the control signal based on the RF energy received at the second pad.
15. The RF communication device according to claim 1 , wherein:
when the RF communication device is operating in the test mode, the test circuit generates the control signal with a first value that causes the first control element to electrically couple the test circuit and the second pad; and
when the RF communication device is operating in the RF communication mode, the RF antenna circuit harvests the RF energy from the first pad, generates a supply voltage for the RF antenna circuit, and produces and transmits modulated information, and the test circuit generates the control signal with a second value that causes the first control element to electrically isolate the test circuit from the second pad.
16. The RF communication device according to claim 1 , wherein within the IC chip, the first control element and the RF antenna circuit are not electrically connected.
17. The RF communication device according to claim 1 , wherein the test circuit comprises an IO buffer and a multiplexer.
18. The RF communication device according to claim 3 , wherein the inverter comprises:
a node between the inverter and the test circuit;
a PMOS transistor with a first terminal coupled to the second pad, a second terminal coupled to the node and to the test circuit, and a gate configured to receive the control signal; and
an NMOS transistor with a first terminal coupled to the node and to the test circuit, a second terminal that enables the node to be pulled-down when the control signal has the second value, and a gate configured to receive the control signal.
19. The RF communication device according to claim 9 , wherein the IC chip further comprises:
a second control element coupled between the test circuit and the fourth pad, wherein the second control element is configured to receive the control signal, wherein when the control signal has the first value, the second control element is configured to operate in the test mode in which the second control element electrically couples the test circuit and the fourth pad, and when the control signal has the second value, the second control element is configured to operate in the RF communication mode in which the second control element electrically isolates the test circuit from the fourth pad.