Semiconductor structure and manufacturing method thereof
Embodiments of the present disclosure provide a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: providing a base; forming a bottom electrode layer on the base, wherein a crystal structure of the bottom electrode layer includes a tetragonal crystal system; forming a first dielectric layer on a surface of the bottom electrode layer by using the bottom electrode layer as a seed layer, wherein a crystal structure of the first dielectric layer includes a tetragonal crystal system; and forming a first current blocking layer on a surface of the first dielectric layer.
1. A method of manufacturing a semiconductor structure, comprising:
providing a base;
forming a bottom electrode layer on the base, wherein a crystal structure of the bottom electrode layer comprises a tetragonal crystal system;
forming a first dielectric layer on a surface of the bottom electrode layer by using the bottom electrode layer as a seed layer, wherein a crystal structure of the first dielectric layer comprises a tetragonal crystal system;
forming a first current blocking layer on a surface of the first dielectric layer; and
forming a second dielectric layer on the first current blocking layer; and depositing a second current blocking layer on a surface of the second dielectric layer, wherein a temperature of the depositing is greater than or equal to a crystallization temperature for a crystal structure of the second dielectric layer to be transformed into a tetragonal crystal system.
2. The method of manufacturing a semiconductor structure according to claim 1 , wherein the bottom electrode layer is formed by an atomic layer deposition process, and a temperature parameter of the atomic layer deposition process is 280° C.-400° C.
3. The method of manufacturing a semiconductor structure according to claim 1 , wherein the first dielectric layer is formed by an epitaxial process.
4. The method of manufacturing a semiconductor structure according to claim 3 , wherein a material of the first dielectric layer is hafnium oxide, and a process temperature of the epitaxial process is 250° C.-600° C.
5. The method of manufacturing a semiconductor structure according to claim 1 , further comprising:
forming a second dielectric layer on the first current blocking layer, wherein a dielectric constant of a material of the second dielectric layer is greater than a dielectric constant of a material of the first dielectric layer.
6. The method of manufacturing a semiconductor structure according to claim 5 , wherein the material of the second dielectric layer comprises titanium oxide.
7. The method of manufacturing a semiconductor structure according to claim 1 , wherein after forming the second current blocking layer, a material of the second dielectric layer comprises tetragonal zirconium oxide, and a material of the second current blocking layer comprises aluminum oxide.
8. The method of manufacturing a semiconductor structure according to claim 7 , wherein a process temperature of the depositing is 200° C.-700° C.
9. The method of manufacturing a semiconductor structure according to claim 1 , wherein a material of the first dielectric layer comprises at least one of dielectric materials of tantalum oxide, hafnium oxide, zirconium oxide, niobium oxide, titanium oxide, barium oxide, strontium oxide, yttrium oxide, lanthanum oxide, praseodymium oxide or barium strontium titanate.
10. The method of manufacturing a semiconductor structure according to claim 1 , wherein the providing a base and the forming a bottom electrode layer on the base comprise:
providing a substrate, and forming a first sacrificial layer, an intermediate support layer, a second sacrificial layer and a top support layer sequentially stacked on the substrate;
patterning the top support layer, the second sacrificial layer, the intermediate support layer, the first sacrificial layer and the substrate, to form a capacitor hole, the capacitor hole penetrating the top support layer, the second sacrificial layer, the intermediate support layer, the first sacrificial layer and part of the substrate, wherein the capacitor hole exposes the substrate;
forming a base bottom electrode layer on a bottom and a sidewall of the capacitor hole; and
removing part of the top support layer, part of the intermediate support layer, part of the base bottom electrode layer, the first sacrificial layer and the second sacrificial layer, to form the base and form the bottom electrode layer on the base.