Display device
A display device includes a first transistor provided with an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a first gate insulating layer between the oxide semiconductor layer and the first gate electrode, a first transparent conductive layer in contact with the oxide semiconductor layer in a first contact area not overlapping the first gate electrode in a plan view, and a second transparent conductive layer connected to the first transparent conductive layer in a second contact area overlapping the first gate electrode in a plan view and provided in a display area of the pixel.
1. A display device comprising:
a transistor with a semiconductor layer and a gate electrode;
a pixel including the transistor and a display area emitting light to an outside of the pixel;
a first transparent conductive layer overlapping more than half of the gate electrode in a direction of a gate length in a plan view and being in contact with the semiconductor layer in a first contact area not overlapping the gate electrode; and
a second transparent conductive layer overlapping the gate electrode in a plan view and being connected to the first transparent conductive layer in a second contact area overlapping the gate electrode,
wherein
a first part of the second transparent conductive layer overlaps the display area in a plan view,
the first transparent conductive layer is in contact with the second transparent conductive layer in a contact hole,
the contact hole is filled with a spacer, and
a part of the spacer is located outside the contact hole.
2. The display device according to claim 1 , wherein the semiconductor layer is formed of an oxide semiconductor.
3. The display device according to claim 1 , wherein the first contact area is in the display area in a plan view.
4. The display device according to claim 1 , further comprising a light-shielding layer overlapping the semiconductor layer,
wherein a second part of the second transparent conductive layer overlaps the light-shielding layer in a plan view.
5. The display device according to claim 4 , wherein the first contact area does not overlap the light-shielding layer in a plan view.
6. The display device according to claim 1 , further comprising a light-shielding layer overlapping the semiconductor layer,
wherein the first contact area does not overlap the light-shielding layer in a plan view.
7. The display device according to claim 1 , further comprising wirings electrically connected to the transistor,
wherein the first contact area does not overlap the wirings.
8. The display device according to claim 1 , wherein the second transparent conductive layer is a pixel electrode of the pixel.
9. A display device comprising:
a transistor with a semiconductor layer and a gate electrode;
a pixel including the transistor and a display area emitting light to an outside of the pixel;
a first conductive layer overlapping more than half of the gate electrode in a direction of a gate length in a plan view and being in contact with the semiconductor layer in a first contact area not overlapping the gate electrode; and
a second conductive layer overlapping the gate electrode in a plan view and being connected to the first conductive layer in a second contact area overlapping the gate electrode,
wherein
the first contact area is in the display area in a plan view,
the first conductive layer is in contact with the second conductive layer in a contact hole,
the contact hole is filled with a spacer, and
a part of the spacer is located outside the contact hole.
10. The display device according to claim 9 , wherein the semiconductor layer is formed of an oxide semiconductor.
11. The display device according to claim 9 , further comprising a light-shielding layer overlapping the semiconductor layer,
wherein a part of the second conductive layer overlaps the light-shielding layer in a plan view.
12. The display device according to claim 11 , wherein the first contact area does not overlap the light-shielding layer in a plan view.
13. The display device according to claim 9 , further comprising a light-shielding layer overlapping the semiconductor layer,
wherein the first contact area does not overlap the light-shielding layer in a plan view.
14. The display device according to claim 9 , further comprising wirings electrically connected to the transistor,
wherein the first contact area does not overlap the wirings.
15. The display device according to claim 9 , wherein the second conductive layer is a pixel electrode of the pixel.
16. A display device comprising:
a first pixel and a second pixel adjacent to the first pixel;
a first transistor included in the first pixel and having a first semiconductor layer and a first gate electrode;
a second transistor layer included in the second pixel and having a second semiconductor layer and a second gate electrode;
a first conductive layer included in the first pixel, overlapping the first gate electrode in a plan view and being in contact with the first semiconductor layer in a first contact area not overlapping the first gate electrode; and
a second conductive layer included in the first pixel, overlapping the first gate electrode in a plan view and being connected to the first conductive layer in a second contact area overlapping the first gate electrode,
wherein the second conductive layer overlaps the second semiconductor layer in a plan view.
17. The display device according to claim 16 , wherein the first and second semiconductor layers are formed of an oxide semiconductor.
18. The display device according to claim 16 , wherein the second conductive layer is a pixel electrode of the first pixel.
19. The display device according to claim 16 , further comprising:
a third conductive layer overlapping the second gate electrode in a plan view and being in contact with the second semiconductor layer in a third contact area not overlapping the second gate electrode; and
a fourth conductive layer overlapping the second gate electrode in a plan view and being connected to the third conductive layer in a fourth contact area overlapping the second gate electrode,
wherein the fourth conductive layer does not overlap the first semiconductor layer in a plan view.
20. The display device according to claim 16 , further comprising a third pixel with a third transistor, and a third semiconductor layer of the third transistor,
wherein the first pixel is adjacent to the second pixel in a first direction,
the third pixel is adjacent to the second pixel in a second direction different from the first direction, and
the second conductive layer overlaps the third semiconductor layer in a plan view.
21. The display device according to claim 1 , wherein the first transparent conductive layer overlaps an entirety of the gate electrode in the direction of the gate length in a cross-sectional view.
22. The display device according to claim 9 , wherein the first conductive layer overlaps an entirety of the gate electrode in the direction of the gate length in a cross-sectional view.