Granted Patent B2

US 12,298,665 · App. 17/486,568 · Granted May 13, 2025

Inventors: Sahngki Hong (San Diego, CA); Lewis J. Kraft (San Diego, CA)

Assignee: Illumina, Inc.

G03F7/0392G03F7/0382G03F7/2002G03F7/2043G03F7/343G03F7/38

Abstract

Claims (67)

1. A method, comprising:

selectively etching a multi-layer stack including a patterned resin layer positioned over a sacrificial layer positioned over a transparent base support, thereby exposing a portion of the transparent base support and a portion of the sacrificial layer;

by directing ultraviolet light through the transparent base support, selectively exposing a portion of a negative photoresist overlying the portion of the transparent base support to the ultraviolet light, whereby the sacrificial layer blocks the ultraviolet light from reaching an other portion of the negative photoresist, thereby utilizing the multi-layer stack to develop the portion of the negative photoresist through the portion of the transparent base support to define an insoluble negative photoresist at a predetermined region of the multi-layer stack; and

applying first and second functionalized layers over the transparent base support, wherein the insoluble negative photoresist is i) present during the application of the first functionalized layer and removed prior to the application of the second functionalized layer, or ii) present during the application of the second functionalized layer and developed after the application of the first functionalized layer.

2. The method as defined in claim 1 , wherein prior to selectively etching the multi-layer stack, the method further comprises imprinting a resin layer positioned over the sacrificial layer positioned over the transparent base support, to form the patterned resin layer including a concave region including a deep portion and a shallow portion defined by a step portion.

3. The method as defined in claim 2 , wherein:

the portion of the transparent base support is exposed at the deep portion;

the portion of the sacrificial layer is exposed at the shallow portion;

the negative photoresist is applied over the etched multi-layer stack;

the selectively exposing of the negative photoresist to the ultraviolet light defines the insoluble negative photoresist in the deep portion;

the other portion of the negative photoresist remains soluble; and

the method further comprises removing the soluble negative photoresist.

4. The method as defined in claim 3 , wherein:

the method further comprises etching the portion of the sacrificial layer exposed at the shallow portion, thereby exposing a second portion of the transparent base support;

the application of the first functionalized layer is over the second portion of the transparent base support; and

the method further comprises:

removing the insoluble negative photoresist to re-expose the portion of the transparent base support at the deep portion; and

applying the second functionalized layer over the portion of the transparent base support re-exposed at the deep portion.

5. The method as defined in claim 4 , further comprising attaching respective primer sets to the first and second functionalized layers.

6. The method as defined in claim 4 , wherein:

prior to the application of the first functionalized layer and the removal of the insoluble negative photoresist, the method further comprises applying a silanized layer over the insoluble negative photoresist and the multi-layer stack;

the removal of the insoluble negative photoresist occurs prior to the application of the first functionalized layer, and removes the silanized layer over the insoluble negative photoresist; and

the first functionalized layer selectively attaches to the silanized layer over the multi-layer stack.

7. The method as defined in claim 6 , further comprising applying a second silanized layer over the portion of the transparent base support re-exposed at the deep portion prior to the application of the second functionalized layer.

8. The method as defined in claim 7 , further comprising:

lifting off the patterned resin layer and the first functionalized layer and the second functionalized layer thereon; and

etching the sacrificial layer to expose interstitial regions of the transparent base support.

9. The method as defined in claim 4 , wherein:

the first functionalized layer is also applied over the insoluble negative photoresist and the patterned resin layer;

the removal of the insoluble negative photoresist removes a portion of the first functionalized layer; and

the method further comprises:

lifting off the patterned resin layer and the first functionalized layer and the second functionalized layer thereon; and

etching the sacrificial layer to expose interstitial regions of the transparent base support.

10. The method as defined in claim 4 , wherein:

the multi-layer stack further includes a lift-off layer positioned between the patterned resin layer and the sacrificial layer;

the patterned resin layer is removed during the selective etching of the multi-layer stack;

the first functionalized layer is also applied over the insoluble negative photoresist and the lift-off layer;

the removal of the insoluble negative photoresist removes a portion of the first functionalized layer; and

the method further comprises:

lifting off the lift-off layer and the first functionalized layer and the second functionalized layer thereon; and

etching the sacrificial layer to expose interstitial regions of the transparent base support.

11. The method as defined in claim 2 , wherein:

the portion of the transparent base support is exposed at the deep portion;

the portion of the sacrificial layer is exposed at the shallow portion; and

the first functionalized layer is applied over the multi-layer stack before the multi-layer stack is utilized to develop the negative photoresist.

12. The method as defined in claim 11 , wherein:

the negative photoresist is applied over first functionalized layer;

the selectively exposing of the negative photoresist to light defines the insoluble negative photoresist in the deep portion;

the other portion of the negative photoresist remains soluble; and

the method further comprises removing the soluble negative photoresist.

13. The method as defined in claim 12 , wherein:

the method further comprises etching the first functionalized layer and the sacrificial layer at the shallow portion, thereby exposing a second portion of the transparent base support at the shallow portion;

the application of the second functionalized layer is over the second portion of the transparent base support and the insoluble negative photoresist; and

the method further comprises removing the insoluble negative photoresist and the second functionalized layer thereon.

14. The method as defined in claim 13 , further comprising attaching respective primer sets to the first and second functionalized layers.

15. The method as defined in claim 13 , further comprising:

lifting off the patterned resin layer and the first functionalized layer and the second functionalized layer thereon; and

etching the sacrificial layer to expose interstitial regions of the transparent base support.

16. A method, comprising:

providing a multi-layer stack including:

a transparent base support;

a sacrificial layer over the transparent base support, the sacrificial layer defining a second functionalized region pattern where the transparent base support is exposed;

a transparent layer over the sacrificial layer and over the transparent base support at the second functionalized region pattern; and

a second sacrificial layer over the transparent layer, the second sacrificial layer defining a first functionalized region pattern where the transparent layer is exposed, wherein the first functionalized region pattern i) overlaps with a portion of the second functionalized region pattern or ii) is adjacent to the second functionalized region pattern;

utilizing the multi-layer stack to develop a positive photoresist through the transparent base support to define an insoluble positive photoresist at a predetermined region of the multi-layer stack;

utilizing the second sacrificial layer to define a first functionalized region corresponding to the first functionalized region pattern; and

utilizing the insoluble positive photoresist to define a second functionalized region at least partially corresponding to the second functionalized region pattern.

Assignments (1)

Continuity (2)

References Cited (14)