Semiconductor device and method of manufacture
A dielectric layer is formed over a substrate, an anti-reflective layer is formed over the dielectric layer, and a first hardmask is formed over the anti-reflective layer. A via opening and a trench opening are formed within the dielectric layer using the anti-reflective layer and the first hardmask as masking materials. After the formation of the trench opening and the via opening, the first hardmask is removed. An interconnect is formed within the openings, and the interconnect has a via with a profile angle of between about 70° and about 80° and a depth ratio of between about 65% and about 70%.
1. A semiconductor device comprising:
a dielectric layer over a first etch stop layer over a substrate;
a first via at least partially within the dielectric layer;
a second via at least partially within the dielectric layer, wherein the first via has a first profile angle and the second via has the first profile angle, and the first profile angle is between about 70° and about 80°;
a first trench directly over the first via, the first trench having a larger width than the first via; and
a second etch stop layer between the dielectric layer and the first etch stop layer, the second etch stop layer being different from the first etch stop layer.
2. The semiconductor device of claim 1 , wherein the first etch stop layer comprises silicon carbon.
3. The semiconductor device of claim 2 , wherein the second etch stop layer comprises Al(Cr)N.
4. The semiconductor device of claim 2 , wherein the second etch stop layer comprises Al(Ti)N.
5. The semiconductor device of claim 2 , wherein the second etch stop layer comprises Al(Sn)N.
6. The semiconductor device of claim 2 , wherein the second etch stop layer comprises Al(Zn)N.
7. The semiconductor device of claim 1 , wherein the second etch stop layer comprises Al(Mg)N.
8. A semiconductor device comprising:
a first conductive trench extending towards a semiconductor substrate, the first conductive trench having a first width;
a first via extending from the first conductive trench towards a first conductive feature over the semiconductor substrate, the first via having a first profile angle of between about 70° and about 80°, a first depth ratio of between about 65% and about 70%, a first ratio of widths between about 1.5 and about 2, and a second width less than the first width;
a second conductive trench extending towards the semiconductor substrate, the second conductive trench having a third width;
a second via extending from the second conductive trench towards a second conductive feature over the semiconductor substrate, the second via having a fourth width less than the third width; and
a dielectric layer surrounding the first conductive trench, a portion of the first via, the second conductive trench, and a portion of the second via, wherein the dielectric layer has a K value of greater than about 2.7.
9. The semiconductor device of claim 8 , wherein the first conductive trench has a first depth of about 45 nm.
10. The semiconductor device of claim 8 , wherein the first conductive trench is separated from the second conductive trench by a distance of about 13 nm.
11. The semiconductor device of claim 8 , wherein the dielectric layer comprises a non-porous material.
12. The semiconductor device of claim 8 , wherein the dielectric layer has a thickness of between about 10 Å and about 1000 Å.
13. The semiconductor device of claim 8 , wherein the dielectric layer has a thickness of between about 10 Å and about 300 Å.
14. The semiconductor device of claim 8 , further comprising a first etch stop layer located between the dielectric layer and the semiconductor substrate, the first etch stop layer comprising Al(Ag)N.
15. A semiconductor device comprising:
a dielectric layer over a semiconductor substrate, wherein the dielectric layer has a K value of greater than about 2.7, a hardness of less than 2.1 Gpa, and a stress of less than about 60 Mpa;
a first conductive feature extending through the dielectric layer, the first conductive feature comprising:
a first trench with a first width; and
a first via with a second width less than the first width, the first via having a first profile angle of between about 70° and about 80°, a first depth ratio of between about 65% and about 70%, a first ratio of widths between about 1.5 and about 2; and
a second conductive feature extending through the dielectric layer, the second conductive feature comprising:
a second trench with a third width; and
a second via with a fourth width less than the third width.
16. The semiconductor device of claim 15 , wherein the dielectric layer has a thickness of between about 10 Å and about 300 Å.
17. The semiconductor device of claim 15 , further comprising a first etch stop layer located between the dielectric layer and the semiconductor substrate, the first etch stop layer comprising Al(Mg)N.
18. The semiconductor device of claim 15 , wherein the first trench is separated from the second trench by a separation distance of about 13 nm.
19. The semiconductor device of claim 15 , wherein the first etch stop layer has a thickness of between about 10 Å and about 200 Å.
20. The semiconductor device of claim 19 , wherein the first etch stop layer has a thickness of between about 10 Å and about 40 Å.