Semiconductor package
A semiconductor package comprising a substrate including substrate pads on a top surface thereof, a first upper semiconductor chip on the substrate and including conductive chip pads, and bonding wires coupled to the substrate pads and the first upper semiconductor chip. The bonding wires include first and second bonding wires. The substrate has a first region between the conductive chip pads and the substrate pads, and a second region between the first region and the substrate pads. The second bonding wire has a maximum vertical level on the first region of the substrate. On the first region of the substrate, the first bonding wire is at a level higher than that of the second bonding wire. On the second region of the substrate, the second bonding wire is at a level higher than that of the first bonding wire.
1. A semiconductor package, comprising:
a substrate that includes a plurality of substrate pads on a top surface of the substrate;
a first upper semiconductor chip on the substrate and including a plurality of conductive chip pads; and
a plurality of bonding wires coupled to the substrate pads and the first upper semiconductor chip,
wherein the bonding wires include a first bonding wire and a second bonding wire that are adjacent to each other,
wherein, when viewed in plan, the substrate has
a first region between the conductive chip pads and the substrate pads; and
a second region between the first region and the substrate pads,
wherein the first and second bonding wires define a boundary between the first and second regions as a horizontal distance from the plurality of conductive chip pads at which the first and second bonding wires have a same vertical level on the substrate,
wherein the second bonding wire has a maximum vertical level on the first region of the substrate,
wherein, on the first region of the substrate, the first bonding wire is at a level higher than a level of the second bonding wire, and
wherein, on the second region of the substrate, the second bonding wire is at a level higher than a level of the first bonding wire.
2. The semiconductor package of claim 1 , wherein a vertical level difference between the first bonding wire and the second bonding wire on the second region of the substrate is equal to or greater than a diameter of the first bonding wire on the second region of the substrate.
3. The semiconductor package of claim 1 , further comprising a stud bump between the first upper semiconductor chip and the second bonding wire,
wherein the conductive chip pads include a first conductive chip pad and a second conductive chip pad,
wherein the first bonding wire is in direct contact with the first conductive chip pad, and
wherein the second bonding wire is electrically connected through the stud bump to the second conductive chip pad.
4. The semiconductor package of claim 1 , further comprising a fixing bump on a first substrate pad of the plurality of substrate pads,
wherein the first bonding wire is between the first substrate pad and the fixing bump.
5. The semiconductor package of claim 1 , further comprising:
a lower semiconductor chip between the substrate and the first upper semiconductor chip, the lower semiconductor chip including a plurality of lower chip pads on a top surface of the lower semiconductor chip; and
a plurality of lower bonding wires coupled to the substrate and the lower chip pads,
wherein, on the second region of the substrate, a vertical level difference between the lower bonding wires is less than a vertical level difference between the first bonding wire and the second bonding wire.
6. The semiconductor package of claim 5 , wherein
when viewed in plan, the first upper semiconductor chip is shifted in a first direction from the lower semiconductor chip, the first direction being parallel to the top surface of the substrate,
when viewed in plan, the first upper semiconductor chip has an overhang area spaced apart from the lower semiconductor chip, and
the first upper semiconductor chip exposes the lower chip pads.
7. The semiconductor package of claim 1 , further comprising:
a second upper semiconductor chip on the first upper semiconductor chip and having a plurality of upper chip pads; and
a plurality of third bonding wires coupled to the upper chip pads and the conductive chip pads.
8. The semiconductor package of claim 7 , wherein a vertical level difference between the plurality of third bonding wires is less than a vertical level difference between the first bonding wire and the second bonding wire on the second region of the substrate.
9. The semiconductor package of claim 1 , wherein
the conductive chip pads are spaced apart from the substrate pads at a first horizontal interval when viewed in plan,
the first region of the substrate is spaced apart from the conductive chip pads at a distance greater than about 0% of the first horizontal interval and equal to or less than about 30% of the first horizontal interval, and
the second region of the substrate is spaced apart from the conductive chip pads at a distance greater than about 30% of the first horizontal interval and equal to or less than about 80% of the first horizontal interval.
10. A semiconductor package, comprising:
a substrate including a first substrate pad and a second substrate pad on a top surface of the substrate;
an upper semiconductor chip on the substrate and including a plurality of conductive chip pads on a top surface of the upper semiconductor chip, the conductive chip pads including a first conductive chip pad and a second conductive chip pad that are adjacent to each other;
a first upper bonding wire coupled to the first conductive chip pad and the first substrate pad;
a second upper bonding wire coupled to the second conductive chip pad and the second substrate pad;
a stud bump between the second conductive chip pad and the second upper bonding wire; and
a fixing bump on an end portion of the first upper bonding wire,
wherein the end portion of the first upper bonding wire is between the first substrate pad and the fixing bump, and
wherein the first upper bonding wire is in direct contact with the first conductive chip pad.
11. The semiconductor package of claim 10 , wherein the stud bump includes a metal that is different from a metal of the first conductive chip pad.
12. The semiconductor package of claim 10 , further comprising a molding layer on the substrate and covering the upper semiconductor chip,
wherein an end portion of the second upper bonding wire is coupled to the second substrate pad, and
wherein the end portion of the second upper bonding wire is covered with the molding layer.
13. The semiconductor package of claim 10 , further comprising:
a lower semiconductor chip between the substrate and the upper semiconductor chip, the lower semiconductor chip including a plurality of lower chip pads on a top surface of the lower semiconductor chip; and
a plurality of lower bonding wires coupled to the substrate and the lower chip pads,
wherein the lower bonding wires are in direct contact with the lower chip pads.
14. The semiconductor package of claim 13 , wherein the substrate has:
a first region between the conductive chip pads and the first and second substrate pads; and
a second region between the first region and the first and second substrate pads,
wherein a vertical level difference between the lower bonding wires is less than a vertical level difference between the first upper bonding wire and the second upper bonding wire on the second region of the substrate.
15. The semiconductor package of claim 10 , wherein, when viewed in plan, the substrate has:
a first region between the conductive chip pads and the first and second substrate pads; and
a second region between the first region and the first and second substrate pads,
wherein, on the first region of the substrate, the first upper bonding wire is at a level higher than a level of the second upper bonding wire, and
wherein, on the second region of the substrate, the second upper bonding wire is at a level higher than a level of the first upper bonding wire.
16. A semiconductor package, comprising:
a substrate including a first substrate pad, a second substrate pad, and a plurality of third substrate pads, the first substrate pad, the second substrate pad, and the plurality of third substrate pads being on a top surface of the substrate;
a plurality of solder balls on a bottom surface of the substrate;
a lower semiconductor chip on the top surface of the substrate;
a first upper semiconductor chip on a top surface of the lower semiconductor chip and including a plurality of conductive chip pads, the conductive chip pads including a first conductive chip pad and a second conductive chip pad that are adjacent to each other;
a plurality of lower bonding wires coupled to the lower semiconductor chip and the third substrate pads, the lower bonding wires being adjacent to each other;
a first upper bonding wire coupled to the first conductive chip pad and the first substrate pad;
a second upper bonding wire coupled to the second conductive chip pad and the second substrate pad; and
a molding layer on the top surface of the substrate, the molding layer covering the lower semiconductor chip, the first upper semiconductor chip, the lower bonding wires, the first upper bonding wire, and the second upper bonding wire,
wherein, when viewed in plan, the substrate has
a first region between the first conductive chip pad and the first substrate pad and between the second conductive chip pad and the second substrate pad; and
a second region between the first region and the first and second substrate pads,
wherein the first and second bonding wires define a boundary between the first and second regions as a horizontal distance from the plurality of conductive chip pads at which the first and second bonding wires have a same vertical level on the substrate,
wherein, on the first region of the substrate, the first upper bonding wire is at a level higher than a level of the second upper bonding wire,
wherein, on the second region of the substrate, the second upper bonding wire is at a level higher than a level of the first upper bonding wire, and
wherein, on the second region of the substrate, a vertical level difference between the lower bonding wires is less than a vertical level difference between the first upper bonding wire and the second upper bonding wire.
17. The semiconductor package of claim 16 , wherein
the first upper bonding wire has a maximum vertical level on the first region of the substrate, and
the second upper bonding wire has a maximum vertical level on the first region of the substrate.
18. The semiconductor package of claim 16 , further comprising:
a second upper semiconductor chip on the first upper semiconductor chip and having a plurality of upper chip pads on a top surface of the second upper semiconductor chip; and
a plurality of third upper bonding wires coupled to the upper chip pads and the conductive chip pads.
19. The semiconductor package of claim 18 , wherein a vertical level difference between the plurality of third upper bonding wires on the second region of the substrate is less than the vertical level difference between the first upper bonding wire and the second upper bonding wire on the second region of the substrate.
20. The semiconductor package of claim 16 , wherein
on the second region of the substrate, the vertical level difference between the first upper bonding wire and the second upper bonding wire is equal to or greater than a diameter of the first upper bonding wire, and
on the second region of the substrate, the vertical level difference between the first upper bonding wire and the second upper bonding wire is equal to or greater than a diameter of the second upper bonding wire.