Power amplifier antenna structure
Integrated Doherty power amplifiers are provided herein. In certain implementations, a Doherty power amplifier includes a carrier amplification stage that generates a carrier signal, a peaking amplification stage that generates a peaking signal, and an antenna structure that combines the carrier signal and the peaking signal. The antenna structure radiates a transmit wave in which the carrier signal and the peaking signal are combined with a phase shift.
1. A radio frequency antenna structure comprising:
a patch antenna element;
a ground plane that extends at least in part beneath the patch antenna element;
an impedance transformer having a feed conductor coupled to the patch antenna element;
a first input conductor extending from the feed conductor and including a first port that receives a carrier signal; and
a second input conductor extending from the feed conductor and including a second port that receives a peaking signal.
2. The radio frequency antenna structure of claim 1 further comprising a substrate that includes the patch antenna element and the impedance transformer.
3. The radio frequency antenna structure of claim 2 wherein the impedance transformer is integrated under the patch antenna element.
4. The radio frequency antenna structure of claim 3 wherein the ground plan extends at least in part beneath the impedance transformer.
5. The radio frequency antenna structure of claim 1 wherein the feed conductor is electromechanically coupled to the patch antenna element.
6. The radio frequency antenna structure of claim 1 further wherein the feed conductor is coupled to the patch antenna element by fields without a direct electrical connection.
7. The radio frequency antenna structure of claim 1 wherein the impedance transformer provides output matching to a carrier amplification stage.
8. The radio frequency antenna structure of claim 1 wherein the impedance transformer provides output matching to a peaking amplification stage.
9. The radio frequency antenna structure of claim 1 wherein impedance transformations provided to the first and second ports is controlled by dimensions of the first and second input conductors.
10. The radio frequency antenna structure of claim 1 wherein a quarter wave impedance transformation between about 25 Ohm to 377 Ohm is provided at the first port.
11. A mobile device comprising:
a transceiver configured to generate a radio frequency input signal; and
an antenna structure that includes a patch antenna element, a ground plane that extends at least in part beneath the patch antenna element, and an impedance transformer having a feed conductor coupled to the patch antenna element, a first input conductor extending from the feed conductor and including a first port that receives a carrier signal, and a second input conductor extending from the feed conductor and including a second port that receives a peaking signal.
12. The mobile device of claim 11 further comprising a substrate that includes the patch antenna element and the impedance transformer.
13. The mobile device of claim 12 wherein the impedance transformer is integrated under the patch antenna element.
14. The mobile device of claim of claim 13 wherein the ground plan extends at least in part beneath the impedance transformer.
15. The mobile device of claim 11 wherein the feed conductor is electromechanically coupled to the patch antenna element.
16. The mobile device of claim 11 wherein the feed conductor is coupled to the patch antenna element by fields without a direct electrical connection.
17. The mobile device of claim 11 wherein the impedance transformer provides output matching to a carrier amplification stage.
18. The mobile device of claim 11 wherein the impedance transformer provides output matching to a peaking amplification stage.
19. The mobile device of claim of claim 11 wherein impedance transformations provided to the first and second ports is controlled by dimensions of the first and second input conductors.
20. The mobile device of claim 11 wherein a quarter wave impedance transformation between about 25 Ohm to 377 Ohm is provided at the first port.