Semiconductor memory structure
A semiconductor memory structure includes a semiconductor substrate, a bit line disposed on the semiconductor substrate, a dielectric liner disposed on a sidewall of the bit line and a capacitor contact disposed on a side of the bit line. The dielectric liner includes a first nitride liner disposed on a sidewall of the bit line, an oxide liner disposed on a sidewall of the first nitride liner, and a second nitride liner disposed on a sidewall of the oxide liner. The capacitor contact includes a semiconductor plug disposed on the semiconductor substrate, a metal plug disposed on the semiconductor plug, a metal silicide liner including a sidewall portion and a bottom portion extending along the sidewall and the bottom of the metal plug respectively, and a nitride layer disposed on the metal silicide liner. The sidewall portion is disposed directly above the second nitride liner.
1. A semiconductor memory structure, comprising:
a semiconductor substrate;
a bit line disposed on the semiconductor substrate;
a dielectric liner disposed on a sidewall of the bit line, wherein the dielectric liner comprises:
a first nitride liner disposed on a sidewall of the bit line;
an oxide liner disposed on a sidewall of the first nitride liner; and
a second nitride liner disposed on a sidewall of the oxide liner; and
a capacitor contact disposed on a side of the bit line, wherein the capacitor contact comprises:
a semiconductor plug disposed on the semiconductor substrate;
a metal plug disposed on the semiconductor plug;
a metal silicide liner comprising a sidewall portion and a bottom portion respectively extending along a sidewall and a bottom of the metal plug, wherein the sidewall portion is disposed directly above the second nitride liner; and
a nitride layer disposed on the metal silicide liner.
2. The semiconductor memory structure as claimed in claim 1 , wherein the sidewall portion is not in direct contact with the bottom portion.
3. The semiconductor memory structure as claimed in claim 1 , wherein the sidewall portion is disposed between the first nitride liner and the metal plug.
4. The semiconductor memory structure as claimed in claim 1 , wherein in a height direction, the sidewall portion is sandwiched between the nitride layer and the second nitride liner.
5. The semiconductor memory structure as claimed in claim 1 , wherein the sidewall portion is disposed on the sidewall of the first nitride liner and the bottom portion is disposed on a sidewall of the second nitride liner.
6. The semiconductor memory structure as claimed in claim 1 , wherein the nitride layer is disposed between the first nitride liner and the metal plug.
7. The semiconductor memory structure as claimed in claim 1 , wherein a sidewall of the nitride layer, a sidewall of the sidewall portion and a sidewall of the second nitride liner are aligned with each other.
8. The semiconductor memory structure as claimed in claim 1 , wherein the sidewall portion is in direct contact with the oxide liner.
9. The semiconductor memory structure as claimed in claim 1 , wherein the semiconductor plug comprises a body portion disposed under the bottom portion and an extending portion disposed on a sidewall of the sidewall portion, wherein the body portion is not in contact with the extending portion.
10. The semiconductor memory structure as claimed in claim 9 , wherein the extending portion is disposed directly above the oxide liner.
11. The semiconductor memory structure as claimed in claim 9 , wherein in a height direction, the extending portion is sandwiched between the nitride layer and the oxide liner.
12. The semiconductor memory structure as claimed in claim 9 , wherein the extending portion is disposed on a sidewall of the first nitride liner, and the body portion is disposed on a sidewall of the second nitride liner.
13. The semiconductor memory structure as claimed in claim 9 , wherein the extending portion is disposed between the first nitride liner and the sidewall portion.
14. The semiconductor memory structure as claimed in claim 1 , wherein in a top view, the nitride layer is in direct contact with the first nitride liner, the oxide liner, and the second nitride liner.
15. The semiconductor memory structure as claimed in claim 1 , wherein a width of the sidewall portion is substantially equal to a thickness of the bottom portion.
16. The semiconductor memory structure as claimed in claim 1 , wherein a width of the sidewall portion is less than or equal to a sum of a width of the oxide liner and a width of the second nitride liner.
17. The semiconductor memory structure as claimed in claim 1 , wherein a ratio of a width of the sidewall portion and a width of the bit line is 1%-65%.
18. The semiconductor memory structure as claimed in claim 1 , wherein the nitride layer surrounds an upper portion of the metal plug and the sidewall portion surrounds a lower portion of the metal plug.
19. The semiconductor memory structure as claimed in claim 1 , wherein the bit line comprises a conductive layer, wherein a top surface of the conductive layer is not higher than a bottom surface of the metal plug.
20. The semiconductor memory structure as claimed in claim 1 , wherein the capacitor contact further comprises an adhesive layer disposed between the metal silicide liner and the metal plug.