Granted Patent B2

US 12,302,638 · App. 17/899,554 · Granted May 13, 2025

Inventors: Sang-Ho Moon (Cheonan-si, KR); Chun Gi You (Asan-si, KR); Tae Kon Kim (Asan-si, KR)

Assignee: SAMSUNG DISPLAY CO., LTD.

H10D86/423H10K50/814H10K59/1213H10K59/1216H10K59/123H10K59/131H10K71/00H10K71/231H10D30/6755H10D86/021H10D86/441H10D86/481H10D86/60H10K59/1201

Abstract

Claims (39)

1. A method for manufacturing an organic light emitting diode display, the method comprising:

providing a substrate;

forming an inorganic insulating layer on the substrate;

forming a third conductive layer on the inorganic insulating layer;

forming a first organic layer on the third conductive layer;

forming a fourth conductive layer on the first organic layer, the forming the fourth conductive layer further includes forming a plurality of metal layers, and the plurality of metal layers is etched by a dry etching process to form a middle layer and an upper layer of the fourth conductive layer;

forming a second organic layer on the first organic layer to cover the fourth conductive layer; and

forming an anode on the second organic layer,

wherein the fourth conductive layer is connected between the third conductive layer and the anode, and

wherein the forming the fourth conductive layer includes at least one of the dry etching process and a wet etching process.

2. The method of claim 1 , wherein

the forming the fourth conductive layer further includes:

forming a transparent conductive oxidization film on the first organic layer; and

forming the plurality of metal layers on the transparent conductive oxidization film.

3. The method of claim 2 , wherein

the transparent conductive oxidization film is etched by the wet etching process to thus form a lower layer of the fourth conductive layer.

4. The method of claim 3 , wherein

the transparent conductive oxidization film includes at least one of indium tin oxide (“ITO”), indium zinc oxide (“IZO”), indium gallium zinc oxide (“IGZO”), and indium tin zinc oxide (“ITZO”), and

the lower layer includes at least one of ITO, IZO, IGZO, and ITZO.

5. The method of claim 1 , wherein

the plurality of metal layers includes at least one of aluminum (Al), titanium (Ti), and titanium nitride (TiN),

the middle layer includes the aluminum, and

the upper layer further includes at least one of titanium and titanium nitride.

6. A method for manufacturing an organic light emitting diode display, the method comprising:

providing a substrate;

forming an inorganic insulating layer on the substrate;

forming a third conductive layer on the inorganic insulating layer;

forming a first organic layer on the third conductive layer;

forming a fourth conductive layer on the first organic layer;

forming a second organic layer on the first organic layer to cover the fourth conductive layer; and

forming an anode on the second organic layer,

wherein the fourth conductive layer is connected between the third conductive layer and the anode,

wherein the forming the fourth conductive layer includes at least one of a dry etching process and a wet etching process,

wherein between the providing the substrate and the forming the inorganic insulating layer on the substrate:

forming a semiconductor layer on the substrate;

forming a first insulating layer on the semiconductor layer;

forming a first conductive layer on the first insulating layer; and

forming a second insulating layer on the first conductive layer, and

wherein the inorganic insulating layer is disposed on the second insulating layer.

Priority Claims (1)

Continuity (2)

References Cited (40)