RRAM circuit
A resistive random-access memory (RRAM) circuit includes a current source configured to output a first current, a first n-type transistor including a first drain terminal configured to receive the first current, an RRAM device, second and third n-type transistors including respective second and third drain terminals coupled to an output terminal of the RRAM device, an amplifier including a non-inverting input coupled to the first drain terminal, an inverting input configured to receive a first reference voltage level, and an output coupled to a gate of each of the first through third n-type transistors, a fourth n-type transistor coupled between the second n-type transistor and a power supply reference node, and a comparator including a non-inverting input configured to receive a second reference voltage level, an inverting input coupled to each of the second and third drain terminals, and an output coupled to a gate of the fourth n-type transistor.
1. A resistive random-access memory (RRAM) circuit comprising:
a current source configured to output a first current;
a first n-type transistor comprising a first drain terminal configured to receive the first current;
an RRAM device;
second and third n-type transistors comprising respective second and third drain terminals coupled to an output terminal of the RRAM device;
an amplifier comprising a non-inverting input coupled to the first drain terminal, an inverting input configured to receive a first reference voltage level, and an output coupled to a gate of each of the first through third n-type transistors;
a fourth n-type transistor coupled between the second n-type transistor and a power supply reference node; and
a comparator comprising a non-inverting input configured to receive a second reference voltage level, an inverting input coupled to each of the second and third drain terminals, and an output coupled to a gate of the fourth n-type transistor.
2. The RRAM circuit of claim 1 , wherein
the RRAM device comprises a variable resistance structure coupled to the output terminal, the variable resistance structure comprising a resistive layer.
3. The RRAM circuit of claim 2 , wherein
the RRAM device further comprises a switching device coupled in series with the variable resistance structure.
4. The RRAM circuit of claim 1 , wherein
the first, second, and third n-type transistors have dimensions configured to cause a sum of currents through the second and third n-type transistors to be equal to the first current.
5. The RRAM circuit of claim 1 , wherein
the second and third n-type transistors have dimensions configured to cause a current through the second n-type transistor to be less than a current through the third n-type transistor.
6. The RRAM circuit of claim 1 , wherein
the comparator is configured to output a first signal comprising a first transition from a high logical state to a low logical state responsive to a voltage at the inverting input rising above the second reference voltage level.
7. The RRAM circuit of claim 1 , wherein
the current source is configured to output the first current having a current level ranging from 50 microamperes (μA) to 500 μA.
8. The RRAM circuit of claim 1 , wherein
one or both of the first or second reference voltage levels is equal to approximately 0.1 volts.
9. The RRAM circuit of claim 1 , wherein
the RRAM device is a first RRAM device,
the comparator is a first comparator, and
the RRAM circuit further comprises:
a second RRAM device;
fifth and sixth n-type transistors comprising respective fourth and fifth drain terminals coupled to an output terminal of the second RRAM device;
a seventh n-type transistor coupled between the fifth n-type transistor and the power supply reference node; and
a second comparator comprising a non-inverting input configured to receive the second reference voltage level, an inverting input coupled to each of the fourth and fifth drain terminals, and an output coupled to a gate of the seventh n-type transistor,
wherein the amplifier output is further coupled to a gate of each of the fifth and sixth n-type transistors.
10. A resistive random-access memory (RRAM) circuit comprising:
a current source configured to output a first current;
a first n-type transistor comprising a first drain terminal configured to receive the first current;
an RRAM device;
second and third n-type transistors comprising respective second and third drain terminals coupled to an output terminal of the RRAM device;
an amplifier comprising a non-inverting input coupled to the first drain terminal, an inverting input configured to receive a first reference voltage level, and an output coupled to a gate of each of the first through third n-type transistors;
a fourth n-type transistor coupled between the second n-type transistor and a power supply reference node;
a fifth n-type transistor coupled between the third n-type transistor and the power supply reference node;
a delay element comprising an output terminal coupled to a gate of the fifth n-type transistor; and
a comparator comprising a non-inverting input configured to receive a second reference voltage level, an inverting input coupled to each of the second and third drain terminals, and an output coupled to a gate of the fourth n-type transistor and an input terminal of the delay element.
11. The RRAM circuit of claim 10 , wherein the delay element further comprises:
a series of inverters coupled to the input terminal; and
an OR gate coupled to the output terminal, wherein the OR gate comprises:
a first input terminal coupled to the input terminal of the delay element; and
a second input terminal coupled to the series of inverters.
12. The RRAM circuit of claim 11 , wherein
the comparator is configured to output a first signal comprising a first transition from a high logical state to a low logical state responsive to a voltage at the inverting input rising above the second reference voltage level, and
the OR gate and the series of inverters are configured to output a second signal comprising a second transition from the high logical state to the low logical state responsive to the first transition.
13. The RRAM circuit of claim 12 , wherein
the OR gate and the series of inverters are configured to output the second transition delayed from the first transition by a period ranging from 100 nanoseconds (ns) to 1000 ns.
14. The RRAM circuit of claim 10 , wherein
the second and third n-type transistors have dimensions configured to cause a current through the second n-type transistor to be the same as a current through the third n-type transistor.
15. The RRAM circuit of claim 10 , wherein
the first and second reference voltage levels are a same reference voltage level.
16. A resistive random-access memory (RRAM) circuit comprising:
a current source and a first n-type transistor coupled in series between a power supply node and a power supply reference node, wherein the current source is configured to output a first current to a first drain terminal of the first n-type transistor;
an RRAM device coupled to a bit line through a selection circuit;
second and third n-type transistors comprising respective second and third drain terminals coupled to an output terminal of the RRAM device;
an amplifier comprising a non-inverting input coupled to the first drain terminal, an inverting input configured to receive a first reference voltage level, and an output coupled to a gate of each of the first through third n-type transistors;
a fourth n-type transistor coupled between the second n-type transistor and the power supply reference node; and
a comparator comprising a non-inverting input configured to receive a second reference voltage level, an inverting input coupled to each of the second and third drain terminals, and an output coupled to a gate of the fourth n-type transistor.
17. The RRAM circuit of claim 16 , further comprising:
a fifth n-type transistor coupled in series with the current source and the first transistor,
wherein a gate of the fifth transistor is configured to receive a logic signal.
18. The RRAM circuit of claim 17 , wherein
the fifth n-type transistor is coupled between the first transistor and the power supply reference node.
19. The RRAM circuit of claim 16 , wherein
the selection circuit comprises a p-type transistor configured to receive a selection signal.
20. The RRAM circuit of claim 16 , wherein
the selection circuit comprises a multiplexer.