Gallium nitride bi-directional high electron mobility transistor in switched-mode neutral forming device applications
A switched-mode neutral forming device is provided herein and comprises one or more windings coupled to (i) a plurality of line terminals via a plurality of switches and (ii) a neutral terminal, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch and a controller, coupled to the plurality of switches, for driving the switches at a frequency orders or magnitude greater than an AC mains frequency.
1. A switched-mode neutral forming device, comprising:
one or more windings coupled to (i) a plurality of line terminals via a plurality of switches and (ii) a neutral terminal, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch that is a gallium nitride (GaN) high mobility electron transistor (HEMT) comprising two gate-source structures that extend to an aluminum gallium nitride (AlGaN) layer, one of which used in place of a drain which allows a common drift region to be used for at least one of current flowing in a direction from a first source terminal to a second source terminal, for current flowing in a direction from the second source terminal to the first source terminal, or to block either a positive or a negative voltage;
an inert passivation layer that contacts and covers a top surface of the aluminum gallium nitride (AlGaN) layer and extends at least partially along a gallium nitride (GaN) layer; and
a controller, coupled to the plurality of switches, for driving the switches at a frequency orders or magnitude about 1000 times greater than an AC mains frequency such that a switching frequency of the switched-mode neutral forming device is about 50 KHz to about 60 KHz.
2. The switched-mode neutral forming device of claim 1 , wherein the switched-mode neutral forming device is a split-phase device.
3. The switched-mode neutral forming device of claim 2 , wherein the switched-mode neutral forming device comprises two bi-directional switches, an inductor, and two capacitors.
4. The switched-mode neutral forming device of claim 3 , wherein the two capacitors have the same capacitive values.
5. The switched-mode neutral forming device of claim 3 , wherein the two bi-directional switches are connected in series with one other and coupled across a series configuration of the two capacitors and across load-side line terminals.
6. The switched-mode neutral forming device of claim 5 , wherein a load-side neutral terminal N is coupled to a point where the two capacitors and are coupled to one another.
7. The switched-mode neutral forming device of claim 6 , wherein the inductor has a first terminal coupled to a point where the two bi-directional switches are coupled to one another and a second terminal coupled to the neutral terminal.
8. The switched-mode neutral forming device of claim 1 , wherein the switched-mode neutral forming device is a three-phase device.
9. The switched-mode neutral forming device of claim 8 , wherein the switched-mode neutral forming device comprises nine bi-directional switches and a star-delta transformer having a star winding on a load side and a delta winding on a power grid side.
10. The switched-mode neutral forming device of claim 9 , wherein the nine bi-directional switches are coupled to one another in a matrix and coupled to the star winding, and wherein a neutral terminal is coupled to a centerpoint of the star winding.
11. The switched-mode neutral forming device of claim 10 , wherein a first set of three of the nine bi-directional switches are respectively coupled between a first line terminal and a first terminal of the star winding, the first line terminal and a second terminal of the star winding, and the first line terminal and a third terminal of the star winding.
12. The switched-mode neutral forming device of claim 10 , wherein a second set of three of the nine bi-directional switches are respectively coupled between a second line terminal and a first terminal of the star winding, the second line terminal and a second terminal of the star winding, and the second line terminal and a third terminal of the star winding.
13. The switched-mode neutral forming device of claim 10 , wherein a third set of three of the nine bi-directional switches are respectively coupled between a third line terminal and a first terminal of the star winding, the third line terminal and a second terminal of the star winding, and the third line terminal and a third terminal of the star winding.
14. The switched-mode neutral forming device of claim 1 , wherein the gallium nitride (GaN) high mobility electron transistor (HEMT) comprises:
a base layer;
a transition layer disposed atop the base layer;
the gallium nitride (GaN) layer is disposed atop the transition layer; and
the aluminum gallium nitride (AlGaN) layer is disposed atop the gallium nitride (GaN) layer,
wherein the two gate-source structures comprises source terminals that extend to the gallium nitride (GaN) layer and gate terminals that extend to the aluminum gallium nitride (AlGaN) layer.
15. The switched-mode neutral forming device of claim 1 , wherein the source terminals and the gate terminals are at least partially surrounded by the inert passivation layer.
16. The switched-mode neutral forming device of claim 1 , wherein a ratio of gate drive loss to conduction loss ratio for the plurality of switches is based on a die area per switch difference that provides for only one of the gates of two gate-source structures to be switched at any given time during operation.
17. The switched-mode neutral forming device of claim 1 , wherein the inert passivation layer covers the entire top surface of the aluminum gallium nitride (AlGaN) layer.
18. A switched-mode neutral forming device, comprising:
one or more windings coupled to (i) a plurality of line terminals via a plurality of switches and (ii) a neutral terminal, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch that is a gallium nitride (GaN) high mobility electron transistor (HEMT) comprising two gate-source structures that extend to an aluminum gallium nitride (AlGaN) layer, one of which used in place of a drain which allows a common drift region to be used for at least one of current flowing in a direction from a first source terminal to a second source terminal, for current flowing in a direction from the second source terminal to the first source terminal, or to block either a positive or a negative voltage, wherein the plurality of switches are operable in one of a split-phase configuration or three-phase configuration;
an inert passivation layer that contacts and covers a top surface of the aluminum gallium nitride (AlGaN) layer and extends at least partially along a gallium nitride (GaN) layer; and
a controller, coupled to the plurality of switches, for driving the switches at a frequency orders or magnitude about 1000 times greater than an AC mains frequency such that a switching frequency of the switched-mode neutral forming device is about 50 KHz to about 60 KHz.
19. The switched-mode neutral forming device of claim 18 , wherein in the split-phase configuration, the switched-mode neutral forming device comprises two bi-directional switches, an inductor, and two capacitors and in three-phase configuration the switched-mode neutral forming device comprises nine bi-directional switches and a star-delta transformer having a star winding on a load side and a delta winding on a power grid side.
20. The switched-mode neutral forming device of claim 18 , wherein a ratio of gate drive loss to conduction loss ratio for the plurality of switches is based on a die area per switch difference that provides for only one of the gates of two gate-source structures to be switched at any given time during operation.