Back-gate controlled power amplifier
The present disclosure relates to semiconductor structures and, more particularly, to a differential circuit with automatic parasitic neutralization and gain boost and methods of manufacture. The structure includes a plurality of auxiliary circuit devices with back-gate controls to perform a boost gain, and a differential pair of circuit devices which are connected to the auxiliary circuit devices.
1. A structure comprising:
a plurality of auxiliary circuit devices comprising back-gate controls to perform a boost gain; and
a differential pair of circuit devices connected to the plurality of auxiliary circuit devices,
wherein a first transistor of the differential pair of circuit devices shares a gate with a first transistor of the plurality of auxiliary circuit devices and a second transistor of the differential pair of circuit devices shares a separate gate with a second transistor of the plurality of auxiliary circuit devices, and a drain of the first transistor of the differential pair of circuit devices is connected to a drain of the second transistor of the plurality of auxiliary circuit devices, and the differential pair of circuit devices and the plurality of auxiliary circuit devices are formed on a triple-well neighboring n-well layout, and the plurality of auxiliary circuit devices being formed over a shared well.
2. The structure of claim 1 , wherein the plurality of auxiliary circuit devices comprises a first NMOS transistor and a second NMOS transistor.
3. The structure of claim 2 , wherein the differential pair of circuit devices comprise a third NMOS transistor and a fourth NMOS transistor.
4. The structure of claim 3 , wherein the first NMOS transistor, the second NMOS transistor, the third NMOS transistor, and the fourth NMOS transistor have a common source connected to ground.
5. The structure of claim 3 , wherein a gate of the first NMOS transistor is connected to a gate of the third NMOS transistor.
6. The structure of claim 3 , wherein a gate of the second NMOS transistor is connected to a gate of the fourth NMOS transistor.
7. The structure of claim 3 , wherein a drain of the first NMOS transistor and a drain of the second NMOS transistor are connected to an inductor.
8. The structure of claim 3 , further comprising a voltage source connected to a back-gate of the first NMOS transistor and a back-gate of the second NMOS transistor.
9. The structure of claim 8 , wherein the voltage source applies a negative voltage to the back-gate of the first NMOS transistor and the back-gate of the second NMOS transistor to provide the boost gain without affecting a gate of first NMOS transistor and a gate of the second NMOS transistor.
10. A structure comprising:
a first transistor of a plurality of auxiliary circuit devices comprising a back-gate connected to a divided current control and a source connected to a current source;
a second transistor of the plurality of auxiliary circuit devices comprising a back-gate connected to the divided current control and a source connected to the current source;
the divided current control controls a gain using the first-back gate of the first transistor and the second back-gate of the second transistor; and
a differential pair of circuit devices comprising a first transistor having a gate shared with the first transistor of the plurality of auxiliary circuit devices, a second transistor of the differential pair of circuit devices sharing a separate gate with the second transistor of the plurality of auxiliary circuit devices, a drain of the first transistor of the differential pair of circuit devices being connected to a drain of the second transistor of the plurality of auxiliary circuit devices, and a drain of the second transistor of the differential pair of circuit devices being connected to a drain of the first transistor of the plurality of auxiliary circuit devices, and the differential pair of circuit devices and the plurality of auxiliary circuit devices are formed on a triple-well neighboring n-well layout, and the plurality of auxiliary circuit devices being formed over a shared well.
11. The structure of claim 10 , wherein the first transistor of the plurality of auxiliary circuit devices comprises a first NMOS transistor and the second transistor of the plurality of auxiliary circuit devices comprises a second NMOS transistor.
12. The structure of 11 , wherein a drain of the first NMOS transistor and a drain of the second NMOS transistor are connected to an inductor.
13. The structure of claim 10 , wherein a gate of the first transistor of the plurality of auxiliary circuit devices is connected to a radio frequency input positive voltage.
14. The structure of claim 10 , wherein a gate of the second transistor is connected to a radio frequency input negative voltage.
15. The structure of claim 10 , further comprising back-gate controls for the differential pair of circuit devices and back-gate controls for the plurality of auxiliary circuit devices, each of which are independently controlled.
16. A structure comprising:
a substrate comprising a plurality of p-wells in a back-gate region on a fully depleted semiconductor on insulator (FDSOI) substrate;
a differential pair of main transistors over a plurality of n-wells;
a plurality of auxiliary devices over the plurality of p-wells; and
a continuous active region shared by the differential pair of transistors and the plurality of auxiliary devices,
wherein a first transistor of the differential pair of main transistors shares a gate with the first transistor of the plurality of auxiliary devices and a second transistor of the differential pair of main transistors shares a separate gate with the second transistor of the plurality of auxiliary devices, and a drain of the first transistor of the differential pair of main transistors is connected to a drain of the second transistor of the plurality of auxiliary devices and a drain of the second transistor of the differential pair of main transistors is connected to a drain of the first transistor of the plurality of auxiliary devices, and the differential pair of circuit devices and the plurality of auxiliary devices are formed on a triple-well neighboring n-well layout, and the plurality of auxiliary devices being formed over a shared p-well.
17. The structure of claim 16 , wherein the back-gate region is controlled independently of a plurality of gates of the differential pair of transistors and the plurality of auxiliary devices.
18. The structure of claim 16 , wherein the first transistor of the plurality of auxiliary devices comprises a first NMOS transistor and the second transistor of the plurality of auxiliary devices comprises a second NMOS transistor.
19. The structure of claim 18 , wherein the first transistor of the differential pair of main transistors comprises a third NMOS transistor and the second transistor of the differential pair of main transistors comprises a fourth NMOS transistor.
20. The structure of claim 19 , further comprising back-gate controls for the differential pair of main transistors and back-gate controls for the plurality of auxiliary devices, each of which are independently controlled.