IP Library › Granted Patent US 12,311,443
Granted Patent B2
US 12,311,443 · App. 17/909,527 · Granted May 27, 2025

Method for forming metal sintered body

Inventors: Heung Nam Han (Seoul, KR); No Jun Kwak (Seoul, KR); Yeon Ju Oh (Seoul, KR); Guen Sik Min (Incheon, KR)
Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
B22F3/1003B22F3/03B22F3/105B22F2003/1051B22F2301/20B22F2998/10
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Quick Facts
Patent No.
US 12,311,443
App. No.
17/909,527
Granted
May 27, 2025
Kind
B2
Abstract

Provided is a method of forming a sintered metal, the method including a first step of inserting tungsten (W) powder in a graphite mold, a second step of interposing tantalum (Ta) foil between the W powder and the graphite mold, and a third step of forming sintered W from the W powder through a sintering process.

Claims (13)

1. A method of forming a sintered metal, the method comprising:

inserting tungsten (W) powder in a graphite mold;

interposing tantalum (Ta) foil between the W powder and the graphite mold; and

forming sintered W from the W powder through a sintering process, the sintering process comprising a spark plasma sintering (SPS) process,

wherein the forming the sintered W from the W powder through the sintering process comprises:

forming Ta carbide (Ta 2 C) in the Ta foil to prevent formation of W carbide based on diffusion of carbon (C) into the sintered W due to carburization; and

forming Ta oxide (Ta 2 O 5 ) in the Ta foil to prevent formation of W oxide based on diffusion of oxygen (O) into the sintered W.

2. The method of claim 1 , wherein the sintering process comprises the spark plasma sintering (SPS) process performed in a vacuum chamber.

3. The method of claim 1 , wherein a thickness of the Ta foil is 25 μm.

4. The method of claim 1 , wherein the Ta foil has a high solid solubility of C.

5. The method of claim 1 , wherein the Ta foil has a high O affinity at a vacuum level of 10 −5 atm.

6. The method of claim 1 , wherein the Ta foil has a high O affinity at all levels higher than or equal to a vacuum level for sintering, the vacuum level for sintering being 10 −2 atm.

7. The method of claim 1 , wherein a foil used is selected from among groups IVa, Va, and VIa of a periodic table.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 6, 2022
From: HAN, HEUNG NAM; KWAK, NO JUN; OH, YEON JU; MIN, GUEN SIK
To: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
Reel/Frame 060996/0868 →
Priority Claims (1)
KR 10-2020-0033808 · Mar 19, 2020 · national
Continuity (1)
Related Publication 20230024857A1 · Jan 26, 2023
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