IP Library › Granted Patent US 12,312,679
Granted Patent B2
US 12,312,679 · App. 17/130,417 · Granted May 27, 2025

Method for producing N-doped carbon nanomesh

Inventors: Miran Mozetic (Ljubljana, SI); Alenka Vesel (Ljubljana, SI); Gregor Primc (Ljubljana, SI); Rok Zaplotnik (Ljubljana, SI)
Assignee: Joz̃Stefan Institute
C23C16/26C23C16/4488C23C16/46C23C16/505C23C16/511C23C16/545H01G11/84
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Quick Facts
Patent No.
US 12,312,679
App. No.
17/130,417
Granted
May 27, 2025
Kind
B2
Abstract

A method for deposition of nitrogen-doped nanocarbon comprises disposing molten polymer and a heated substrate in a plasma reactor; providing dense nitrogen-containing plasma in the plasma reactor in a space between the molten polymer and the heated substrate; and allowing the dense nitrogen-containing plasma to interact with both the molten polymer and the heated substrate to form a film of nitrogen-containing nanocarbon on the heated substrate.

Claims (31)

1. A method for deposition of nitrogen-doped nanocarbon comprising:

disposing molten polymer and a heated substrate in a plasma reactor, wherein the molten polymer is at a temperature of between 20° and 600° C. and the heated substrate is at a temperature of between 30° and 1200° C.;

providing dense nitrogen-containing plasma in the plasma reactor in a space between the molten polymer and the heated substrate, wherein providing the dense nitrogen plasma comprises applying a power used of between 1 and 30 MW/m 3 , and wherein the nitrogen pressure in the plasma reactor is between 1 and 50 Pa; and

allowing the dense nitrogen-containing plasma to interact with both the molten polymer and the heated substrate to form a film of nitrogen-containing nanocarbon on the heated substrate;

wherein the molten polymer comprises polyethylene terephthalate.

2. The method of claim 1 , wherein the molten polymer is at a temperature of between 30° and 400° C.

3. The method of claim 1 , wherein the heated substrate is at a temperature of between 60° and 900° C.

4. The method of claim 1 , comprising sustaining the nitrogen plasma by a low-pressure gaseous discharge.

5. The method of claim 4 , comprising sustaining the nitrogen plasma by inductively coupled radiofrequency discharge.

6. The method of claim 4 , comprising sustaining the nitrogen plasma by microwave discharge.

7. The method of claim 1 , wherein disposing the heated substrate in the plasma reactor comprises moving an elongated substrate through the reactor.

8. The method of claim 7 , comprising cutting the elongated substrate following formation of the film of nitrogen-containing nanocarbon on the substrate.

9. The method of claim 1 , wherein the dense nitrogen-containing plasma comprises nitrogen or ammonia gas.

10. The method of claim 1 , wherein the heated substrate comprises titanium.

11. A method of making an electrochemical device, the method comprising:

depositing a film of nitrogen-doped nanocarbon, comprising:

disposing molten polymer and a heated substrate in a plasma reactor, wherein the molten polymer is at a temperature of between 20° and 600° C. and the heated substrate is at a temperature of between 30° and 1200° C.;

providing nitrogen-containing plasma in the plasma reactor in a space between the molten polymer and the heated substrate, wherein providing the dense nitrogen plasma comprises applying a power used of between 1 and 30 MW/m 3 , and wherein the nitrogen pressure in the plasma reactor is between 1 and 50 Pa; and

allowing the nitrogen-containing plasma to interact with both the molten polymer and the heated substrate to form the film of nitrogen-containing nanocarbon on the heated substrate; and

forming an electrochemical device containing the film of nitrogen-containing nanocarbon;

wherein the molten polymer comprises polyethylene terephthalate.

12. The method of claim 11 , wherein the electrochemical device comprises a super-battery.

13. The method of claim 11 , wherein the electrochemical device comprises a super-capacitor.

14. The method of claim 11 , wherein the electrochemical device comprises a fuel cell.

15. A method comprising:

disposing a molten polymer and a substrate in a plasma reactor, wherein the molten polymer is at a temperature of between 200° C. and 500° C.;

heating the substrate to a temperature of between 300° C. and 1200° C.;

maintaining a pressure in the plasma reactor of between 1 and 1000 Pa;

providing a gaseous, nitrogen-containing plasma in the plasma reactor by application of a power density of between 0.1 and 100 MW/m 3 ;

allowing the gaseous, nitrogen-containing plasma to interact with the molten polymer and the heated substrate to deposit a film of nitrogen-containing nanocarbon on the heated substrate;

wherein the molten polymer comprises polyethylene terephthalate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 9, 2021
From: MOZETIC, MIRAN; VESEL, ALENKA; PRIMC, GREGOR; ZAPLOTNIK, ROK
To: JOZEF STEFAN INSTITUTE
Reel/Frame 056482/0493 →
Continuity (1)
Related Publication 20220195593A1 · Jun 23, 2022
References Cited (32)
US 9150418B2 · Boyd · 2015 [cited by applicant]
US 10041168B2 · Boyd et al. · 2018 [cited by applicant]
US 20210234167A1 · Zhamu · 2021 [cited by examiner]
CN 102745678 · 2012 [cited by applicant]
CN 103910349 · 2014 [cited by applicant]
CN 105336505 · 2016 [cited by applicant]
CN 106744898 · 2017 [cited by applicant]
CN 107863394 · 2018 [cited by applicant]
CN 108203813 · 2018 [cited by applicant]
CN 108525693 · 2018 [cited by applicant]
CN 110350206 · 2019 [cited by applicant]
EP 2682367A2 · 2014 [cited by examiner]
JP 2017188241 · 2017 [cited by applicant]
JP 2018070977 · 2018 [cited by applicant]
JP 6562331 · 2019 [cited by applicant]
KR 20130034182 · 2013 [cited by applicant]
KR 20150017795 · 2015 [cited by applicant]
KR 20170056390 · 2017 [cited by applicant]
KR 20190083506 · 2019 [cited by applicant]
RU 2717069 · 2020 [cited by applicant]
WO WO2016167583A1 · 2016 [cited by examiner]
WO WO2017012281 · 2017 [cited by applicant]
WO WO2019238206A1 · 2019 [cited by examiner]
Boas et al., “Characterization of nitrogen doped graphene bilayers synthesized by fast, low temperature microwave plasma-enhanced chemical vapour deposition,” Scientific Reports, Sep. 2019, 9:13715, 1-12. [cited by applicant]
Bundaleska et al., “Large-scale synthesis of free-standing N-doped graphene using microwave plasma,” Scientific Reports, Aug. 2018, 8:12595, 1-11. [cited by applicant]
Dias et al., “Production of N-graphene by microwave N2-Ar plasma,” J. Phys. D: Appl. Phys., Jan. 2016, 49(5):055307, 1-9, 10 pages. [cited by applicant]
Evlashin et al., “N-Doped Carbon Nano Walls for Power Sources,” Scientific Reports, Apr. 2019, 9:6716, 1-7. [cited by applicant]
Jeong et al., “Nitrogen-Doped Graphene for High-Performance Ultracapacitors and the Importance of Nitrogen-Doped Sites at Basal Planes,” Nano Letters, May 2011, 11(6):2472-2477. [cited by applicant]
Lin et al., “3D Nitrogen-doped graphene prepared by pyrolysis of graphene oxide with polypyrrole for electrocatalysis of oxygen reduction reaction,” Nano Energy, Mar. 2013, 2(2):241-248. [cited by applicant]
Vesel et al., “A Review of Strategies for the Synthesis of N-Doped Graphene-Like Materials,” Nanomaterials, Nov. 2020, 10(11):2286, 36 pages. [cited by applicant]
Vesel et al., “One-Step Plasma Synthesis of Nitrogen-Doped Carbon Nanomesh,” Nanomaterials, Mar. 2021, 11(4):837, 16 pages. [cited by applicant]
Zhang et al., “Tunable electronic properties of graphene through controlling bonding configurations of doped nitrogen atoms,” Scientific Reports, Jun. 2016, 6:28330, 1-10. [cited by applicant]